BAS69
Low capacitance small signal Schottky diodes
Features
■
■
■
■
Low diode capacitance
Designed for RF applications
Low profile packages
Very low parasitic inductor and resistor
BAS69KFILM
(Single)
SOD-523
Description
The BAS69 series use 15V barrier, with extremely
low junction capacitance, suitable for the
detection of an RF signal and the compensation
of the voltage drift with the temperature. The
presented packages make the device ideal in
applications where space saving is critical.
The low junction capacitance will reduce the
disturbance on the RF signal.
SOT-323
)-
(s
so
b
ct
u
d
-O
ro
s)
P
t(
te
uc
le
o
od
r
s
P
b
O
te
le
so
b
O
Table 1.
b
O
so
te
le
ro
P
BAS69WFILM
(Single)
uc
d
s)
t(
P
te
le
od
r
BAS69-05WFILM
(Common cathode)
BAS69-06WFILM
(Common anode)
BAS69-04WFILM
(Series)
s)
t(
uc
BAS69-07P6FILM
(2 parallel diodes)
BAS69-09P6FILM
(2 opposite diodes)
SOT-666
Configurations in top view
Device summary
Value
10 mA
15 V
< 1 pF
150 °C
Symbol
I
F
V
RRM
C (typ)
T
j
(max)
October 2009
Doc ID 12565 Rev 2
1/9
www.st.com
9
Characteristics
BAS69
1
Characteristics
Table 2.
Symbol
V
RRM
I
F
I
FSM
T
stg
T
j
T
L
Absolute ratings (limiting values at T
j
= 25 °C, unless otherwise specified)
Parameter
Repetitive peak reverse voltage
Continuous forward current
Surge non repetitive forward current
Storage temperature range
Maximum operating junction temperature
(1)
Maximum soldering
temperature
(1)
Half wave, single phase
60 Hz
Value
15
10
2
-65 to +150
150
Unit
V
mA
A
1. Pulse test: t
p
= 380 µs,
δ
< 2 %
Table 3.
Symbol
R
th(j-a)
Thermal parameters
Parameter
Junction to ambient
(1)
SOT-323
1. Epoxy printed circuit board with recommended pad layout
)-
(s
so
b
ct
u
d
-O
ro
s)
P
t(
te
uc
le
o
od
r
s
P
b
O
te
le
so
b
O
Symbol
Parameter
T
j
= 25 °C
I
R(1)
Reverse leakage current
T
j
= 125 °C
T
j
= 25 °C
T
j
= 125 °C
T
j
= 25 °C
V
F(1)
Forward voltage drop
T
j
= 125 °C
T
j
= 25 °C
T
j
= 125 °C
1. Pulse test: t
p
≤
250 ms,
δ ≤
2 %
Table 4.
Static electrical characteristics
Test conditions
b
O
so
SOD-523, SOT-666
te
le
ro
P
uc
d
260
Value
550
600
s)
t(
°C
P
te
le
Min.
od
r
Typ
6
s)
t(
uc
Max.
0.035
30
Unit
°C/W
Unit
V
R
= 1 V
µA
0.23
10
350
230
500
460
100
380
260
mV
570
510
V
R
= 15 V
I
F
= 1 mA
I
F
= 10 mA
Table 5.
Dynamic characteristics
Parameter
Symbol
C
Test conditions
Min.
Typ
Max.
1.0
Unit
pF
Ω
nH
Diode capacitance
V
R
= 0 V, F = 1 MHz
15
1.5
R
F
L
S
Forward resistance
Series inductance
I
F
= 5 mA, F = 100 MHz
2/9
Doc ID 12565 Rev 2
BAS69
Characteristics
Figure 1.
Forward voltage drop versus
forward current (typical values)
Figure 2.
Reverse leakage current versus
reverse voltage applied
(typical values)
1.E+02
I
FM
(mA)
1.E+02
I
R
(µA)
Tj=125°C
1.E+01
1.E+01
Tj=85°C
1.E+00
Tj=125°C
1.E-01
1.E+00
Tj=85°C
Tj=25°C
Tj=-40°C
Tj=25°C
1.E-02
V
FM
(V)
1.E-03
1.0
1.2
V
R
(V)
0.0
2.5
5.0
7.5
1.E-01
0.0
0.2
0.4
0.6
0.8
Figure 3.
Differential forward resistance
versus forward current
(typical values)
F=10kHz
Tj=25°C
Figure 4.
Junction capacitance versus
reverse voltage applied
(typical values)
100
R
F
(
Ω
)
C(pF)
1.0
0.9
0.8
)-
(s
so
b
ct
u
d
-O
ro
s)
P
t(
te
uc
le
o
od
r
s
P
b
O
te
le
so
b
O
0.4
0.3
0.2
0.1
0.0
10
b
O
0.6
0.5
0.7
so
te
le
ro
P
uc
d
10.0
12.5
s)
t(
15.0
P
te
le
5.0
od
r
s)
t(
uc
F=1MHz
Vosc=30mV
RMS
Tj=25°C
I
F
(mA)
10.0
V
R
(V)
7.5
10.0
12.5
15.0
1
1.0
100.0
0.0
2.5
Figure 5.
Relative variation of thermal
impedance junction to ambient
versus pulse duration (SOT-323)
Figure 6.
Relative variation of thermal
impedance junction to ambient
versus pulse duration (SOT-666)
Z
th(j-a)
/R
th(j-a)
Z
th(j-a)
/R
th(j-a)
Single pulse
SOT-666
1.E+00
1.E+00
Single pulse
SOT-323
1.E-01
1.E-01
1.E-02
t
P
(s)
Epoxy FR4
S
CU
=2.25 mm²
e
CU
=35 µm
t
P
(s)
1.E-02
1.E-01
Epoxy FR4
e
CU
=35 µm
1.E-03
1.E-02
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
1.E-03
1.E+00
1.E+01
Doc ID 12565 Rev 2
3/9
Ordering information scheme
BAS69
Figure 7.
Relative variation of thermal
impedance junction to ambient
versus pulse duration (SOD-523)
Single pulse
SOD-523
Figure 8.
Thermal resistance junction to
ambient versus copper surface
under each lead
printed circuit board, epoxy FR4 - SOT-323
Z
th(j-a)
/R
th(j-a)
1.E+00
600
R
th
(j-a)
550
1.E-01
500
450
1.E-02
400
t
P
(s)
Epoxy FR4
e
CU
=35 µm
350
S
CU
(mm²)
300
1.E-03
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
0
5
10
15
20
25
30
35
40
2
Figure 9.
Ordering information scheme
Ordering information scheme
BAS69
Signal Schottky diodes
VRRM = 15 V
)-
(s
so
b
ct
u
d
-O
ro
s)
P
t(
te
uc
le
o
od
r
s
P
b
O
te
le
so
b
O
Configuration
No letter = Single diode
04 = Series diodes
05 = Common cathode
06 = Common anode
07 = Parallel diodes
09 = Opposite diodes
Package
W = SOT-323
K = SOD-523
P6 = SOT-666
Packing
FILM = Tape and reel
b
O
so
te
le
xx
ro
P
uc
d
s)
t(
45
50
xx FILM
P
te
le
od
r
s)
t(
uc
4/9
Doc ID 12565 Rev 2
BAS69
Package information
3
Package information
●
●
Epoxy meets UL94, V0
Lead-free packages
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
specifications, grade definitions and product status are available at:
www.st.com.
ECOPACK
®
is an ST trademark.
Table 6.
SOD-523 dimensions
Dimensions
E
0.15 M C A B
E1
B
Ref.
Millimeters
Min.
Typ.
0.60
Max.
2xb
D
A
E
0.50
1.50
0.20 M C A B
A
R0.1
8°
E1
A
SEATING PLANE
c
C
L
7°
Figure 10. SOD-523 footprint (dimensions in mm)
od
s)
r
P
t(
te
uc
le
o
od
r
s
P
b
O
te
le
so
b
O
uc
s)
t(
L1
O
-
so
b
D
b
c
L
L1
t
le
1.10
0.70
0.25
0.07
0.15
0.05
P
e
1.60
1.20
0.80
0.20
ro
0.70
1.70
1.30
0.90
0.35
0.20
uc
d
Min.
0.010
0.003
Inches
Typ.
s)
t(
Max.
0.020 0.024 0.028
0.059 0.063 0.067
b
-O
so
0.7
2
te
le
r
P
od
0.043 0.047 0.051
0.028 0.031 0.035
0.014
0.008
s)
t(
uc
0.25
0.20
0.006 0.008 0.010
0.002
0.008
0.3
Doc ID 12565 Rev 2
5/9
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