BSL202SN
OptiMOS 2 Small-Signal-Transistor
Features
• N-channel
• Enhancement mode
• Super Logic level (2.5V rated)
• Avalanche rated
• dv /dt rated
• Pb-free lead plating; RoHS compliant
• Qualified according to AEC Q101
• Halogen free according to IEC61249-2-21
®
Product Summary
V
DS
R
DS(on),max
V
GS
=4.5 V
V
GS
=2.5 V
I
D
20
22
36
7.5
A
V
mW
TSOP-6
6
5
4
1
2
3
Type
BSL202SN
Package
TSOP-6
Tape and Reel Information
H6327: 3000 pcs/ reel
Marking
sPD
Lead Free
Yes
Packing
Non dry
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous drain current
Symbol Conditions
I
D
T
A
=25 °C
T
A
=70 °C
Pulsed drain current
Avalanche energy, single pulse
I
D,pulse
E
AS
T
A
=25 °C
I
D
=7.5 A,
R
GS
=25
W
I
D
=7.5 A,
V
DS
=16 V,
di /dt =200 A/µs,
T
j,max
=150 °C
Value
7.5
6.0
30
30
mJ
Unit
A
Reverse diode dv /dt
dv /dt
6
kV/µs
Gate source voltage
Power dissipation
1)
Operating and storage temperature
ESD Class
Soldering Temperature
IEC climatic category; DIN IEC 68-1
V
GS
P
tot
T
j
,
T
stg
JESD22-A114 -HBM
T
A
=25 °C
±12
2
-55 ... 150
0 (0V to 250V)
260 °C
55/150/56
V
W
°C
Rev 2.0
page 1
2014-01-08
BSL202SN
Parameter
Symbol Conditions
min.
Thermal characteristics
Thermal resistance,
junction - minimal footprint
SMD version, device on PCB
Values
typ.
max.
Unit
R
thJS
R
thJA
minimal footprint
6 cm
2
cooling area
1)
-
-
-
-
-
-
50
230
62.5
K/W
Electrical characteristics,
at
T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Drain-source leakage current
V
(BR)DSS
V
GS
= 0 V,
I
D
= 250 µA
V
GS(th)
I
DSS
V
DS
=V
GS
,
I
D
=30 µA
V
DS
=20 V,
V
GS
=0 V,
T
j
=25 °C
V
DS
=20 V,
V
GS
=0 V,
T
j
=150 °C
20
0.7
-
-
0.95
-
-
1.2
1
V
mA
-
-
-
-
-
-
26
17
25
100
100
36
22
-
S
nA
mW
Gate-source leakage current
Drain-source on-state resistance
I
GSS
R
DS(on)
V
GS
=12 V,
V
DS
=0 V
V
GS
=2.5 V,
I
D
=5.9 A
V
GS
=4.5 V,
I
D
=7.5 A
Transconductance
g
fs
|V
DS
|>2|I
D
|R
DS(on)max
,
I
D
=7.5 A
1)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
2
(single layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air. (t < 5 sec.)
Rev 2.0
page 2
2014-01-08
BSL202SN
Parameter
Symbol Conditions
min.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
I
S
I
S,pulse
V
SD
t
rr
Q
rr
V
GS
=0 V,
I
F
=7.5 A,
T
j
=25 °C
V
R
=10 V,
I
F
=7.5 A,
di
F
/dt =100 A/µs
-
T
A
=25 °C
-
-
-
-
-
0.8
14.7
4.62
30
1.2
-
-
V
ns
nC
-
2
A
Q
gs
Q
gd
Q
g
V
plateau
V
DD
=10 V,
I
D
=7.5 A,
V
GS
=0 to 4.5 V
-
-
-
-
1.82
1.1
5.8
2
2.42
1.6
8.7
-
V
nC
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
=10 V,
V
GS
=4.5 V,
I
D
=7.5 A,
R
G,ext
=6
W
V
GS
=0 V,
V
DS
=10 V,
f
=1 MHz
-
-
-
-
-
-
-
863
278
40
8.26
27.5
18.9
4.06
1147
370
60
-
-
-
-
ns
pF
Values
typ.
max.
Unit
Rev 2.0
page 3
2014-01-08
BSL202SN
1 Power dissipation
P
tot
=f(T
A
)
2 Drain current
I
D
=f(T
A
);
V
GS
≥4.5 V
8
2
7
1.6
6
5
P
tot
[W]
I
D
[A]
0
40
80
120
160
1.2
4
0.8
3
2
0.4
1
0
0
0
40
80
120
160
T
A
[°C]
T
A
[°C]
3 Safe operating area
I
D
=f(V
DS
);
T
A
=25 °C;
D
=0
parameter:
t
p
10
2
limited by on-state
resistance
10 µs
4 Max. transient thermal impedance
Z
thJA
=f(t
p
)
parameter:
D
=t
p
/T
10
2
0.5
10
1
1 ms
100 µs
0.2
10
1
10 ms
0.1
Z
thJA
[K/W]
10
0
I
D
[A]
0.05
DC
0.02
10
-1
10
0
0.01
10
-2
single pulse
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
-1
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
V
DS
[V]
t
p
[s]
Rev 2.0
page 4
2014-01-08
BSL202SN
5 Typ. output characteristics
I
D
=f(V
DS
);
T
j
=25 °C
parameter:
V
GS
16
4.5 V
1.8 V
3V
2V
2.2 V
6 Typ. drain-source on resistance
R
DS(on)
=f(I
D
);
T
j
=25 °C
parameter:
V
GS
60
14
2.5 V
50
12
2.4 V
40
8
R
DS(on)
[mW]
10
2.2 V
I
D
[A]
30
2.5 V
3V
6
2V
20
3.5 V
4.5 V
6V
4
10
2
1.8 V
1.6 V
0
0
1
2
3
0
0
4
8
12
16
V
DS
[V]
I
D
[A]
7 Typ. transfer characteristics
I
D
=f(V
GS
); |V
DS
|>2|I
D
|R
DS(on)max
8 Typ. forward transconductance
g
fs
=f(I
D
);
T
j
=25 °C
8
30
7
25
6
20
5
25 °C
4
g
fs
[S]
150 °C
I
D
[A]
15
3
10
2
5
1
0
0
1
2
3
0
0
1
2
3
4
5
6
7
8
V
GS
[V]
I
D
[A]
Rev 2.0
page 5
2014-01-08
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