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BC808-40LT1

CategoryDiscrete semiconductor    The transistor   
File Size132KB,4 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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BC808-40LT1 Parametric

Parameter NameAttribute value
Brand NameON Semiconductor
Is it lead-free?Contains lead
MakerON Semiconductor
Parts packaging codeSOT-23
package instructionCASE 318-09, TO-236, 3 PIN
Contacts3
Manufacturer packaging code318-08
Reach Compliance Codenot_compliant
ECCN codeEAR99
Maximum collector current (IC)0.5 A
Collector-emitter maximum voltage25 V
ConfigurationSINGLE
Minimum DC current gain (hFE)250
JEDEC-95 codeTO-236AB
JESD-30 codeR-PDSO-G3
JESD-609 codee0
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)240
Polarity/channel typePNP
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Lead (Sn80Pb20)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature30
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz
BC808-25LT1G,
SBC808-25LT1G,
BC808-40LT1G
General Purpose
Transistors
PNP Silicon
Features
http://onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
AEC−Q101 Qualified and PPAP Capable
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
3
MAXIMUM RATINGS
Rating
Collector
Emitter Voltage
Collector
Base Voltage
Emitter
Base Voltage
Collector Current
Continuous
Symbol
V
CEO
V
CBO
V
EBO
I
C
Value
−25
−30
−5.0
−500
Unit
V
V
V
mAdc
1
2
SOT−23
CASE 318
STYLE 6
MARKING DIAGRAM
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR− 5 Board,
(Note 1) T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Total Device Dissipation Alumina
Substrate, (Note 2)
T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Junction and Storage Temperature
Symbol
P
D
Max
225
1.8
556
Unit
mW
mW/°C
°C/W
1
5x
M
G
300
2.4
R
qJA
T
J
, T
stg
417
−55
to +150
mW
mW/°C
°C/W
°C
= Device Code
x = F or G
= Date Code*
= Pb−Free Package
5x M
G
G
R
qJA
P
D
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina.
©
Semiconductor Components Industries, LLC, 2011
November, 2011
Rev. 3
1
Publication Order Number:
BC808−25LT1/D

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