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BSL308CH6327XTSA1

Description
Switching Voltage Regulators Auto Transformer Dvr
Categorysemiconductor    Discrete semiconductor   
File Size376KB,13 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
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BSL308CH6327XTSA1 Overview

Switching Voltage Regulators Auto Transformer Dvr

BSL308CH6327XTSA1 Parametric

Parameter NameAttribute value
Product CategoryMOSFET
ManufacturerInfineon
RoHSDetails
TechnologySi
Mounting StyleSMD/SMT
Package / CaseTSOP-6
Number of Channels1 Channel
Transistor PolarityP-Channel
Vds - Drain-Source Breakdown Voltage- 30 V, - 30 V
Id - Continuous Drain Current- 2 A, - 2.3 A
Rds On - Drain-Source Resistance130 mOhms, 93 mOhms
Vgs - Gate-Source Voltage- 20 V
Vgs th - Gate-Source Threshold Voltage- 2 V, - 1.2 V
Qg - Gate Charge- 1.2 nC, 0.65 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
PackagingReel
Channel ModeEnhancement
ConfigurationDual
Fall Time2.8 ns. 1.4 ns
Forward Transconductance - Min4.6 S, 5 S
Height1.1 mm
Length3 mm
Pd - Power Dissipation500 mW (1/2 W)
Rise Time7.7 ns, 2.3 ns
Factory Pack Quantity3000
Transistor Type1 P-Channel
Typical Turn-Off Delay Time15.3 ns, 8.3 ns
Typical Turn-On Delay Time5.6 ns, 4.4 ns
Width1.5 mm
BSL308C
OptiMOS™ P3 + Optimos™ 2 Small Signal Transistor
Features
·
Complementary P + N channel
·
Enhancement mode
·
Logic level (4.5V rated)
·
Avalanche rated
·
Qualified according to AEC Q101
·
100% Lead-free; RoHS compliant
·
Halogen free according to IEC61249-2-21
I
D
V
DS
R
DS(on),max
V
GS
=±10 V
V
GS
=±4.5 V
Product Summary
P
-30
80
130
-2.0
PG-TSOP-6
6
5
N
30
57
93
2.3
A
V
mW
4
3
1
2
3
Type
BSL308C
Package
PG-TSOP6
Tape and Reel Information
H6327: 3000 pcs / reel
Marking
sPS
Lead Free
Yes
Packing
Non dry
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
1)
Parameter
Symbol Conditions
P
Continuous drain current
I
D
T
A
=25 °C
T
A
=70 °C
Pulsed drain current
I
D,pulse
E
AS
V
GS
P
tot
T
j
,
T
stg
JESD22-A114-HBM
T
solder
T
A
=25 °C
T
A
=25 °C
P:
I
D
=-2.0 A,
N:
I
D
=2.3 A,
R
GS
=25
W
-2.0
-1.6
-8.0
Value
N
2.3
1.8
9
A
Unit
Avalanche energy, single pulse
10.7
10.8
mJ
Gate source voltage
Power dissipation
2)
Operating and storage temperature
ESD class
Soldering temperature
IEC climatic category; DIN IEC 68-1
1)
±20
0.5
-55 ... 150
class 0 (<250V)
260
55/150/56
V
W
°C
°C
Remark: only one of both transistors active
Rev.2.1
page 1
2013-11-07
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