Surface Mount NPN General
Purpose Transistor
2N2222AUA (TX, TXV)
Features:
Ceramic 4 pin surface mount package
Small package to minimize circuit board area
Hermetically sealed
Processed per MIL-PRF-19500/255
Description:
The 2N2222AUA (TX, TXV) is a herme cally sealed ceramic surface mount general purpose switching transistor. The four pin
ceramic package is ideal for designs where board space and device weight are important design considera ons. The “UA”
suffix denotes the 4 terminal leadless chip carrier package, type “A” per MIL‐PRF‐19500/255.
Typical screening per MIL‐PRF‐19500/255. The burn‐in condi on is V
CB
= 30 V. P
D
= 400 mW, T
A
= 25°C, t = 80 hrs. Refer to
MIL‐PRF‐19500/255 for complete requirements. In addi on, the TX and TXV versions receive 100% thermal response
tes ng.
When ordering parts without processing, do not use the TX or TXV suffix.
Applications:
General switching
Amplification
Signal processing
Radio transmission
Logic gates
General Note
TT Electronics reserves the right to make changes in product specification without
notice or liability. All information is subject to TT Electronics’ own data and is
considered accurate at time of going to print.
© TT electronics plc
OPTEK Technology, Inc.
1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200
www.optekinc.com | www.ttelectronics.com
Issue B
08/2016
Page 1
Surface Mount NPN General
Purpose Transistor
2N2222AUA (TX, TXV)
Electrical Specifications
Absolute Maximum Ratings
(T
A
= 25° C unless otherwise noted)
Collector‐Base Voltage
Collector‐Emi er Voltage
Emi er‐Base Voltage
Collector Current‐Con nuous
Opera ng Junc on Temperature (T
J
)
Storage Junc on Temperature (T
stg
)
Power Dissipa on @ T
A
= 25°C
Power Dissipa on @ Tc = 25° C
Soldering Temperature (vapor phase reflow for 30 seconds)
Soldering Temperature (heated collet for 5 seconds)
75V
50V
6.0V
800mA
‐65° C to +200 °C
‐65° C to +200° C
0.5 W
1.16 W
(1)
215° C
260° C
Electrical Characteristics
(T
A
= 25° C unless otherwise noted)
SYMBOL
PARAMETER
MIN
MAX
UNITS
TEST CONDITIONS
OFF CHARACTERISTICS
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
I
CES
Collector‐Base Breakdown Voltage
Collector‐Emi er Breakdown Voltage
Emi er‐Base Breakdown Voltage
Collector‐Base Cutoff Current
Emi er‐Base Cutoff Current
Collector Emi er Cutoff Current
75
50
6.0
10
10
10
50
V
V
V
nA
µA
nA
nA
I
C
= 10 µA, I
E
= 0
I
C
= 10 mA, I
B
= 0
I
E
= 10 µA, I
C
= 0
V
CB
= 60 V, I
E
= 0
V
CB
= 60 V, I
E
= 0, T
A
= 150° C
V
EB
= 4 V, I
C
= 0
V
CE
= 50 V
ON CHARACTERISTICS
50
75
h
FE
Forward‐Current Transfer Ra o
100
100
30
35
Note:
1. Derate linearly 6.6 mW/°C above 25° C
2. Pulse Width ≤300 µs, Duty Cycle ≤ 2.0%
General Note
TT Electronics reserves the right to make changes in product specification without
notice or liability. All information is subject to TT Electronics’ own data and is
considered accurate at time of going to print.
© TT electronics plc
325
300
‐
‐
‐
‐
‐
‐
V
CE
= 10 V, I
C
= 0.1 mA
V
CE
= 10 V, I
C
= 1.0 mA
V
CE
= 10 V, I
C
= 10 mA
V
CE
= 10 V, I
C
= 150 mA
(2)
V
CE
= 10 V, I
C
= 500 mA
(2)
V
CE
= 10 V, I
C
= 10 mA, T
A
= ‐55°C
OPTEK Technology, Inc.
1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200
www.optekinc.com | www.ttelectronics.com
Issue B
08/2016
Page 2
Surface Mount NPN General
Purpose Transistor
2N2222AUA (TX, TXV)
Electrical Characteristics
(T
A
= 25° C unless otherwise noted)
SYMBOL
PARAMETER
MIN
MAX
UNITS
TEST CONDITIONS
ON CHARACTERISTICS
V
CE (SAT)
Collector‐Emi er Satura on Voltage
0.6
0.3
1.0
1.2
2.0
V
V
V
V
I
C
= 150 mA, I
B
= 15 mA
(2)
I
C
= 500 mA, I
B
= 50 mA
(2)
I
C
= 150 mA, I
B
= 15 mA
(2)
I
C
= 500 mA, I
B
= 50 mA
(2)
V
BE(SAT)
Base‐Emi er Satura on Voltage
SMALL‐SIGNAL CHARACTERISTICS
|h
fe
|h
fe
C
obo
C
ibo
Small Signal Forward Current Transfer
Ra o
Small Signal Forward Current Transfer
Ra o
Open Circuit Output Capacitance
Input Capacitance (Output Open)
50
2.5
8.0
25
‐
‐
pF
pF
V
CE
= 10 V, I
C
= 1.0 mA, f = 1.0 kHz
V
CE
= 20 V, I
C
= 20 mA, f = 100 MHz
V
CB
= 10 V, 100 kHz ≤ f ≤ 1.0 MHZ
V
EB
= 0.5 V, 100 kHz ≤ f ≤ 1.0 MHZ
SWITCHING CHARACTERISTICS
t
on
t
off
Turn‐On Time
Turn‐Off Time
35
300
ns
ns
V
CC
= 30 V, I
C
= 150 mA, I
B1
= 15 mA
V
CC
= 30 V, I
C
= 150 mA, I
B1
= I
B2
= 15 mA
General Note
TT Electronics reserves the right to make changes in product specification without
notice or liability. All information is subject to TT Electronics’ own data and is
considered accurate at time of going to print.
© TT electronics plc
OPTEK Technology, Inc.
1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200
www.optekinc.com | www.ttelectronics.com
Issue B
08/2016
Page 3
Surface Mount NPN General
Purpose Transistor
2N2222AUA (TX, TXV)
Issue
B
Change Description
Updated with new TT format
Approval
Date
General Note
TT Electronics reserves the right to make changes in product specification without
notice or liability. All information is subject to TT Electronics’ own data and is
considered accurate at time of going to print.
© TT electronics plc
OPTEK Technology, Inc.
1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200
www.optekinc.com | www.ttelectronics.com
Issue B
08/2016
Page 4
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