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2SB1215T-H

Description
Bipolar Transistor, -100V, -3A, Low VCE(sat), PNP Single, TP/TP-FA, IPAK / TP, 500-BLKBG
CategoryDiscrete semiconductor    The transistor   
File Size286KB,8 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Environmental Compliance  
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2SB1215T-H Overview

Bipolar Transistor, -100V, -3A, Low VCE(sat), PNP Single, TP/TP-FA, IPAK / TP, 500-BLKBG

2SB1215T-H Parametric

Parameter NameAttribute value
Brand Nameonsemi
Is it lead-free?Lead free
Objectid1388777671
Parts packaging codeIPAK / TP
Manufacturer packaging code369AJ
Reach Compliance Codenot_compliant
ECCN codeEAR99
Samacsys Manufactureronsemi
Samacsys Modified On2024-02-23 15:06:34
Maximum collector current (IC)3 A
ConfigurationSINGLE
Minimum DC current gain (hFE)200
JESD-609 codee6
Number of components1
Maximum operating temperature150 °C
Polarity/channel typePNP
Maximum power dissipation(Abs)20 W
surface mountNO
Terminal surfaceTIN BISMUTH
Ordering number : EN2539C
2SB1215/2SD1815
Bipolar Transistor
(–)100V, (–)3A, Low VCE(sat) (PNP)NPN Single TP/TP-FA
Applications
http://onsemi.com
Relay drivers, high-speed inverters, converters, and other general high-current switching applications
Features
Excllent linearity of hFE
Low collector to emitter saturation voltage
Small-sized package permitting 2SB1215/2SD1815-applied sets to be made small and slim
Fast switching time
High fT
Halogen free compliance
Specifications
( ): 2SB1215
Absolute Maximum Ratings
at Ta=25°C
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Collector Current (Pulse)
Symbol
VCBO
VCEO
VEBO
IC
ICP
Conditions
Ratings
(-
-)120
(-
-)100
(-
-)6
(-
-)3
(-
-)6
Unit
V
V
V
A
A
Continued on next page.
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7518-003
1.5
6.5
5.0
4
2.3
0.5
Package Dimensions
unit : mm (typ)
7003-003
2SB1215S-E
2SB1215S-H
2SB1215T-E
2SB1215T-H
2SD1815S-E
2SD1815S-H
2SD1815T-E
2SD1815T-H
1.5
6.5
5.0
4
2.3
0.5
0.8
1.6
1.2
7.5
0.5
1
0.6
2
0.8
3
0 to 0.2
1.2
0.6
2.5
0.85
0.7
0.85
0.5
2SB1215S-TL-E
2SB1215S-TL-H
2SB1215T-TL-E
2SB1215T-TL-H
2SD1815S-TL-E
2SD1815S-TL-H
2SD1815T-TL-E
2SD1815T-TL-H
1 : Base
2 : Collector
3 : Emitter
4 : Collector
TP-FA
5.5
7.0
5.5
7.0
1
2
3
1 : Base
2 : Collector
3 : Emitter
4 : Collector
TP
2.3
2.3
2.3
2.3
Product & Package Information
• Package : TP
• JEITA, JEDEC : SC-64, TO-251
• Minimum Packing Quantity : 500 pcs./bag
• Package : TP-FA
• JEITA, JEDEC : SC-63, TO-252
• Minimum Packing Quantity : 700 pcs./reel
Marking
(TP, TP-FA)
B1215
RANK
LOT No.
Packing Type (TP-FA) : TL
D1815
Electrical Connection
2,4
2,4
1.2
1
1
RANK
LOT No.
TL
2SB1215
3
2SD1815
3
Semiconductor Components Industries, LLC, 2013
November, 2013
N2713 TKIM TC-00003057/N2503TN (KT)/92098HA (KT)/40196TS (KOTO) 8-9913/8229MO/4097TA, TS No.2539-1/7

2SB1215T-H Related Products

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Description Bipolar Transistor, -100V, -3A, Low VCE(sat), PNP Single, TP/TP-FA, IPAK / TP, 500-BLKBG Bipolar Transistor, -100V, -3A, Low VCE(sat), PNP Single, TP/TP-FA, DPAK / TP-FA, 700-REEL Precision Amplifiers Bipolar Transistors - BJT BIP NPN 3A 100V Bipolar Transistors - BJT BIP PNP 3A 100V Bipolar Transistors - BJT BIP PNP 3A 100V USB Interface IC USB to Serial UART Enhanced IC SSOP-28 Bipolar Transistors - BJT BIP NPN 3A 100V
Brand Name onsemi onsemi ON Semiconductor ON Semiconductor ON Semiconductor ON Semiconductor ON Semiconductor ON Semiconductor
Is it lead-free? Lead free Lead free Lead free Lead free Lead free Lead free Lead free Lead free
Manufacturer packaging code 369AJ 369AH 369AJ 369AH 369AJ 369AH 369AJ 369AH
Reach Compliance Code not_compliant not_compliant not_compliant not_compliant not_compliant not_compliant not_compliant not_compliant
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Maximum collector current (IC) 3 A 3 A 3 A 3 A 3 A 3 A 3 A 3 A
Configuration SINGLE SINGLE Single Single Single Single Single Single
Minimum DC current gain (hFE) 200 140 140 140 200 140 200 200
JESD-609 code e6 e6 e6 e6 e6 e6 e6 e6
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Polarity/channel type PNP PNP NPN NPN PNP PNP NPN NPN
Maximum power dissipation(Abs) 20 W 20 W 20 W 20 W 20 W 20 W 20 W 20 W
surface mount NO YES NO YES NO YES NO YES
Terminal surface TIN BISMUTH Tin/Bismuth (Sn/Bi) Tin/Bismuth (Sn/Bi) Tin/Bismuth (Sn/Bi) Tin/Bismuth (Sn/Bi) Tin/Bismuth (Sn/Bi) Tin/Bismuth (Sn/Bi) Tin/Bismuth (Sn/Bi)
Factory Lead Time - 62 weeks 1 week - 4 weeks 1 week 1 week -
Peak Reflow Temperature (Celsius) - 260 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Maximum time at peak reflow temperature - 30 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Base Number Matches - - 1 1 1 1 1 1

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