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CDBD20100-G

Description
Rectifier Diode, Schottky, 20A, 100V V(RRM),
CategoryDiscrete semiconductor    diode   
File Size451KB,4 Pages
ManufacturerComchip Technology
Websitehttp://www.comchiptech.com/
Environmental Compliance
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CDBD20100-G Overview

Rectifier Diode, Schottky, 20A, 100V V(RRM),

CDBD20100-G Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Objectid8326220237
package instructionTO-263, D2PAK-3/2
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresLOW POWER LOSS
applicationEFFICIENCY
Shell connectionCATHODE
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.85 V
JEDEC-95 codeTO-263AB
JESD-30 codeR-PSSO-G2
Maximum non-repetitive peak forward current150 A
Number of components2
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current10 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum repetitive peak reverse voltage100 V
Maximum reverse current500 µA
Reverse test voltage100 V
surface mountYES
technologySCHOTTKY
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
Chip Schottky Barrier Rectifier
CDBD2040-G Thru. CDBD20200-G
Reverse Voltage: 40 to 200 Volts
Forward Current: 20.0 Amp
RoHS Device
D2PAK
Features
-
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
0.046(1.20)
0.032(0.80)
0.402(10.20)
0.386(9.80)
0.185(4.70)
0.169(4.30)
0.055(1.40)
0.047(1.20)
-
Low power loss, high efficiency.
-
High current capability, low forward voltage drop.
-
High surge capability.
-
Guard ring for overvoltage protection.
-
Ultra high-speed switching.
-
Silicon epitaxial planar chip, metal silicon junction.
-
Lead-free part meets environmental standards of
MIL-STD-19500
/228
2
0.370(9.40)
0.354(9.00)
0.012(0.30)
0.004(0.10)
0.024(0.60)
0.016(0.40)
1
0.192(4.8)
0.176(4.4)
3
0.063(1.60)
0.055(1.40)
0.108(2.70)
Mechanical data
-
Case: TO-263/D2PAK, molded plastic.
-
Terminals: Solder plated, Solderable per
MIL-STD-750, method 2026.
0.205(5.20)
0.189(4.80)
0.092(2.30)
Dimensions in inches and
(millimeters)
-
Polarity: Indicated by cathode band.
-
Mounting Position: Any
-
Weight:1.46 grams (approx.).
PIN
1
PIN
3
PIN
2
Maximum Ratings
(At Ta=25°C, unless otherwise noted)
Parameter
Repetitive peak reverse voltage
Continuous reverse voltage
RMS voltage
Maximum Forward rectified current
(See fig. 1)
Maximum forward voltage
I
F
=10.0A
Maxium forward surge current, 8.3ms
singlehalf sine-wave superimposed on
rate load (JEDEC method)
Maximum
reverse current
Typical thermal
resistance
V
R
=V
RRM
T
A
=25°C
V
R
=V
RRM
T
A
=100°C
Junction to Case
Symbol
V
RRM
V
R
V
RMS
I
O
V
F
CDBD
2040-G
CDBD
2045-G
CDBD
2060-G
CDBD
20100-G
CDBD
20150-G
CDBD
20200-G
Unit
V
V
V
A
40
40
28
45
45
31.5
60
60
42
20.0
100
100
70
150
150
105
200
200
140
0.55
0.75
0.85
1.00
V
I
FSM
I
R
I
R
R
θJc
T
J
T
STG
-55 to +125
150
0.5
50
2.0
-55 to +150
-65 to +175
A
mA
mA
°C/W
°C
°C
Operating temperature
Storage temperature
Company reserves the right to improve product design , functions and reliability without notice.
QW-BB035
REV:C
Page 1
Comchip Technology CO., LTD.

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