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ZXT12P12DXTC

Description
Bipolar Transistors - BJT Dual 12V PNP
Categorysemiconductor    Discrete semiconductor   
File Size257KB,6 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
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ZXT12P12DXTC Overview

Bipolar Transistors - BJT Dual 12V PNP

ZXT12P12DXTC Parametric

Parameter NameAttribute value
Product CategoryBipolar Transistors - BJT
ManufacturerDiodes
RoHSDetails
Mounting StyleSMD/SMT
Package / CaseMSOP-8
Transistor PolarityPNP
ConfigurationDual
Collector- Emitter Voltage VCEO Max- 12 V
Collector- Base Voltage VCBO- 20 V
Emitter- Base Voltage VEBO7.5 V
Collector-Emitter Saturation Voltage- 140 mV
Maximum DC Collector Current3 A
Gain Bandwidth Product fT85 MHz
Maximum Operating Temperature+ 150 C
Continuous Collector Current- 3 A
DC Current Gain hFE Max300 at 10 mA at 2 V
Height0.95 mm
Length3.1 mm
Minimum Operating Temperature- 55 C
PackagingReel
Pd - Power Dissipation0.87 W
Factory Pack Quantity4000
Width3.1 mm
Unit Weight0.004938 oz
ZXT12P12DX
SuperSOT4™
DUAL 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR
SUMMARY
V
CEO
=-12V; R
SAT
= 47m ; I
C
= -3A
DESCRIPTION
This new 4th generation ultra low saturation transistor utilises the Zetex
matrix structure combined with advanced assembly techniques to give
extremely low on state losses. This makes it ideal for high efficiency, low
voltage switching applications.
MSOP8
FEATURES
Extremely Low Equivalent On Resistance
Extremely Low Saturation Voltage
h
FE
characterised up to 12A
I
C
=3A Continuous Collector Current
MSOP8 package
C1
C2
B1
B2
APPLICATIONS
DC - DC Converters
Power Management Functions
Power switches
Motor control
7
B1
E1
E2
ORDERING INFORMATION
DEVICE
ZXT12P12DXTA
ZXT12P12DXTC
DEVICE MARKING
T12P12DX
REEL SIZE
(inches)
7
13
TAPE WIDTH
(mm)
12mm embossed
12mm embossed
1
E1
C1
C1
C2
C2
QUANTITY
PER REEL
1000 units
E2
B2
3
2
Top View
4000 units
ISSUE 1 - MARCH 2000
1
4
5
6
8
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