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2PA1774
PNP general-purpose transistor
Rev. 05 — 17 November 2009
Product data sheet
1. Product profile
1.1 General description
PNP transistor in a SOT416 (SC-75) plastic package. The NPN complement is 2PC4617.
1.2 Features
Low current (max. 150 mA)
Low voltage (max. 50 V)
1.3 Applications
General-purpose switching and amplification in communication, Electronic Data
Processing (EDP) and consumer applications.
2. Pinning information
Table 1.
Pin
1
2
3
Pinning
Description
base
emitter
collector
1
2
3
1
2
sym013
Simplified outline
Symbol
3
3. Ordering information
Table 2.
Ordering information
Package
Name
2PA1774Q
2PA1774R
2PA1774S
SC-75
Description
plastic surface mounted package; 3 leads
Version
SOT416
Type number
NXP Semiconductors
2PA1774
PNP general-purpose transistor
4. Marking
Table 3.
2PA1774Q
2PA1774R
2PA1774S
Marking codes
Marking code
YQ
YR
YS
Type number
5. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
[1]
Conditions
open emitter
open base
open collector
Min
-
-
-
-
-
-
Max
−60
−50
−6
−150
−200
−100
150
+150
150
+150
Unit
V
V
V
mA
mA
mA
mW
°C
°C
°C
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
ambient temperature
T
amb
≤
25
°C
[1]
-
−65
-
−65
Transistor mounted on an FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint.
6. Thermal characteristics
Table 5.
Symbol
R
th(j-a)
[1]
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
Conditions
[1]
Min
-
Typ
-
Max
833
Unit
K/W
Transistor mounted on an FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint.
2PA1774_5
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 05 — 17 November 2009
2 of 7
NXP Semiconductors
2PA1774
PNP general-purpose transistor
7. Characteristics
Table 6.
Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol
I
CBO
Parameter
collector-base
cut-off current
emitter-base
cut-off current
DC current gain
2PA1774Q
2PA1774R
2PA1774S
V
CEsat
collector-emitter
saturation
voltage
collector
capacitance
transition
frequency
I
C
=
−50
mA;
I
B
=
−5
mA
I
E
= i
e
= 0 A;
V
CB
=
−12
V; f = 1 MHz
I
E
=
−2
mA;
V
CE
=
−12
V;
f = 100 MHz
[1]
[1]
Conditions
I
E
= 0 A; V
CB
=
−30
V
I
E
= 0 A; V
CB
=
−30
V;
T
j
= 150
°C
I
C
= 0 A; V
EB
=
−4
V
I
C
=
−1
mA; V
CE
=
−6
V
[1]
Min
-
-
-
Typ
-
-
-
Max
−100
−5
−100
Unit
nA
μA
nA
I
EBO
h
FE
120
180
270
-
-
-
-
-
270
390
560
−200
mV
C
c
f
T
-
100
-
-
2.2
-
pF
MHz
[1]
Pulse test: t
p
≤
300
μs; δ ≤
0.02.
2PA1774_5
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 05 — 17 November 2009
3 of 7
NXP Semiconductors
2PA1774
PNP general-purpose transistor
8. Package outline
Plastic surface-mounted package; 3 leads
SOT416
D
B
E
A
X
v
M
A
HE
3
Q
A
1
e1
e
bp
2
w
M
B
A1
c
Lp
detail X
0
0.5
scale
1 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
0.95
0.60
A1
max
0.1
bp
0.30
0.15
c
0.25
0.10
D
1.8
1.4
E
0.9
0.7
e
1
e
1
0.5
H
E
1.75
1.45
L
p
0.45
0.15
Q
0.23
0.13
v
0.2
w
0.2
OUTLINE
VERSION
SOT416
REFERENCES
IEC
JEDEC
JEITA
SC-75
EUROPEAN
PROJECTION
ISSUE DATE
04-11-04
06-03-16
Fig 1.
2PA1774_5
Package outline SOT416 (SC-75)
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 05 — 17 November 2009
4 of 7
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