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UPC8179TK-E2-A

Description
RF Amplifier Lo-Current Amplifier
CategoryTopical application    Wireless rf/communication   
File Size1MB,20 Pages
ManufacturerCEL
Websitehttp://www.cel.com/
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UPC8179TK-E2-A Overview

RF Amplifier Lo-Current Amplifier

UPC8179TK-E2-A Parametric

Parameter NameAttribute value
Product CategoryRF Amplifier
ManufacturerCEL
RoHSDetails
TypeRF IC
Operating Frequency100 MHz to 2.4 GHz
Gain16.0 dB
NF - Noise Figure5 dB at 2400 MHz
Operating Supply Voltage2.4 V to 3.3 V
Operating Supply Current5.4 mA at 3 V
Minimum Operating Temperature- 40 C
Mounting StyleSMD/SMT
Package / CaseS06
PackagingReel
Input Return Loss9 dB
Isolation dB42 dB at 2400 MHz
Number of Channels1 Channel
Pd - Power Dissipation232 mW
Factory Pack Quantity5000
Supply Voltage - Max3.3 V
Supply Voltage - Min2.4 V
DATA SHEET
BIPOLAR ANALOG INTEGRATED CIRCUIT
PC8112TB
DESCRIPTION
The
PC8112TB is a silicon monolithic integrated circuit designed as 1st frequency down-converter for
cellular/cordless telephone receiver stage. This IC consists of mixer and local amplifier. The
PC8112TB features
high impedance output of open collector. Similar ICs of the
PC2757TB and
PC2758TB feature low impedance
output of emitter follower. These TB suffix ICs which are smaller package than conventional T suffix ICs contribute
to reduce your system size.
The
PC8112TB is manufactured using the 20 GHz f
T
NESAT™III silicon bipolar process. This process uses
silicon nitride passivation film and gold electrodes. These materials can protect chip surface from external pollution
and prevent corrosion/migration. Thus, this IC has excellent performance, uniformity and reliability.
FEATURES
• Excellent RF performance
APPLICATIONS
• 1.5 to 1.9 GHz cellular/cordless telephone (PHS, DECT, PDC1.5G and so on)
• 800 to 900 MHz cellular telephone (PDC800M and so on)
ORDER INFORMATION
Part Number
DI
S
PC8112TB-E3-A
Document No. P12808EJ3V0DS00 (3rd edition)
Date Published November 2000 N CP(K)
CO
Package
6-pin super minimold
The mark
: IIP
3
= –7 dBm@f
RFin
= 1.9 GHz (reference)
IM
3
= –88 dBm@P
RFin
= –38 dBm, 1.9 GHz (reference)
Similar conversion gain to
PC2757 and lower noise figure than
PC2758
Minimized carrier leakage
: RF
LO
= –80 dB@f
RFin
= 900 MHz (reference)
RF
LO
= –55 dB@f
RFin
= 1.9 GHz (reference)
High linearity
: P
O(sat)
= –2.5 dBm TYP.@f
RFin
= 900 MHz
P
O(sat)
= –3 dBm TYP.@f
RFin
= 1.9 GHz
Low current consumption
: I
CC
= 8.5 mA TYP.
Supply voltage
: V
CC
= 2.7 to 3.3 V
High-density surface mounting : 6-pin super minimold package
Remark
To order evaluation samples, please contact your local nearby sales office (Part number for sample
order:
PC8112TB-A).
NT
IN
Markings
C2K
Embossed tape 8 mm wide.
Qty 3kpcs/reel.
Pin 1, 2, 3 face the tape perforation side.
Caution Electro-static sensitive devices
shows major revised points.
UE
Supplying Form
D
SILICON MMIC 1st FREQUENCY DOWN-CONVERTER
FOR CELLULAR/CORDLESS TELEPHONE

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RoHS Details Details No Details
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Mounting Style SMD/SMT SMD/SMT - SMD/SMT
Package / Case S06 SOT-363 - Minimold-6
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