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2N4240

Description
Power Bipolar Transistor, 2A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-66, Metal, 2 Pin,
CategoryDiscrete semiconductor    The transistor   
File Size74KB,3 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
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Power Bipolar Transistor, 2A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-66, Metal, 2 Pin,

2N4240 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
Objectid1439168785
Parts packaging codeTO-66
Contacts2
Reach Compliance Codenot_compliant
ECCN codeEAR99
Samacsys ManufacturerMicrosemi Corporation
Samacsys Modified On2017-11-16 09:32:19
Other featuresHIGH RELIABILITY
Maximum collector current (IC)2 A
Collector-emitter maximum voltage300 V
ConfigurationSINGLE
Minimum DC current gain (hFE)30
JEDEC-95 codeTO-66
JESD-30 codeO-MBFM-P2
JESD-609 codee0
Number of components1
Number of terminals2
Maximum operating temperature200 °C
Package body materialMETAL
Package shapeROUND
Package formFLANGE MOUNT
Polarity/channel typeNPN
Maximum power dissipation(Abs)35 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN LEAD
Terminal formPIN/PEG
Terminal locationBOTTOM
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)15 MHz
7516 Central Industrial Drive
Riviera Beach, Florida
33404
PHONE: (561) 842-0305
FAX: (561) 845-7813
2N4240
APPLICATIONS:
Off-Line Inverters
Switching Regulators
Motor Controls
Deflection Circuits
DC-DC Converters
High Voltage Amplifiers
FEATURES:
High Voltage: 250 to 500V
Fast Switching: t
f
< 3
µ
sec.
High Power: 35 Watts
High Current: 2 Amps
Low V
CE (SAT)
5 Amp, 500V,
High Voltage
NPN Silicon Power
Transistors
DESCRIPTION:
These power transistors are produced by PPC's DOUBLE
DIFFUSED PLANAR process. This technology produces high
voltage devices with excellent switching speeds, frequency
response, gain linearity, saturation voltages, high current gain,
and safe operating areas. They are intended for use in
Commercial, Industrial, and Military power switching, amplifier,
and regulator applications.
Ultrasonically bonded leads and controlled die mount
techniques are utilized to further increase the SOA capability
and inherent reliability of these devices. The temperature
range to 200
°
C permits reliable operation in high ambients, and
the hermetically sealed package insures maximum reliability
and long life.
TO-66
ABSOLUTE MAXIMUM RATINGS:
SYMBOL
V
CBO
*
V
CEO
*
V
CER
*
V
EBO
*
I
C
*
I
C
*
I
B
*
T
STG
*
T
J
*
*
P
T
*
θ
*
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage R
BE
= 50
Emitter-Base Voltage
Peak Collector Current
Continuous Collector Current
Base Current
Storage Temperature
Operating Junction Temperature
Lead Temperature 1/16" from Case for 10 Sec.
Power Dissipation
T
C
= 25
°
C
Thermal Impedance
VALUE
500
300
400
6
5
2
1
-65 to 200
-65 to 200
235
35
5.0
UNITS
Volts
Volts
Volts
Volts
Amps
Amps
Amps
°
C
°
C
°
C
Watts
°
C/W
JC
Indicates JEDEC registered data.
MSC1058.PDF 05-19-99

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