2N2218A datasheet, PDF - EEWORLD Datasheet

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2N2218A: DescriptionOperational Amplifiers - Op Amps Op-Amp; CategoryDiscrete semiconductor The transistor; File Size756KB，4 Pages; ManufacturerCentral Semiconductor

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Operational Amplifiers - Op Amps Op-Amp

2N2218A Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Parts packaging code	TO-39
package instruction	CYLINDRICAL, O-MBCY-W3
Contacts	3
Reach Compliance Code	not_compliant
ECCN code	EAR99
Maximum collector current (IC)	0.8 A
Collector-emitter maximum voltage	40 V
Configuration	SINGLE
Minimum DC current gain (hFE)	40
JEDEC-95 code	TO-39
JESD-30 code	O-MBCY-W3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Maximum operating temperature	200 °C
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Maximum power dissipation(Abs)	0.8 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	WIRE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	250 MHz
Maximum off time (toff)	285 ns
Maximum opening time (tons)	35 ns
Base Number Matches	1

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2N2218

2N2218A

SILICON

NPN TRANSISTORS

w w w. c e n t r a l s e m i . c o m

DESCRIPTION:

The CENTRAL SEMICONDUCTOR 2N2218 and

2N2218A are silicon NPN transistors manufactured by

the epitaxial planar process, and designed for small

signal general purpose and switching applications.

MARKING: FULL PART NUMBER

TO-39 CASE

MAXIMUM RATINGS:

(TA=25°C unless otherwise noted)

SYMBOL

Collector-Base Voltage

VCBO

Collector-Emitter Voltage

VCEO

Emitter-Base Voltage

Continuous Collector Current

Power Dissipation

Power Dissipation (TC=25°C)

Operating and Storage Junction Temperature

ELECTRICAL

SYMBOL

ICBO

ICEV

IEBO

BVCBO

BVCEO

BVEBO

VCE(SAT)

VBE(SAT)

hFE

CHARACTERISTICS:

(TA=25°C)

TEST CONDITIONS

VCB=50V

VCB=60V

VCE=60V, VEB=3.0V

VEB=3.0V

IC=10μA

IC=10mA

IE=10μA

IC=150mA,

IC=500mA,

IC=150mA,

IC=500mA,

IB=15mA

IB=50mA

IB=15mA

IB=50mA

VEBO

TJ, Tstg

2N2218

MIN

MAX

5.0

0.4

1.6

1.3

2.6

120

2N2218

5.0

800

3.0

2N2218A

6.0

UNITS

°C

-65 to +200

2N2218A

MIN

MAX

6.0

0.3

1.0

1.2

2.0

120

UNITS

VCE=10V, IC=100μA

VCE=10V, IC=1.0mA

VCE=10V,

IC=10mA

IC=150mA

VCE=1.0V, IC=150mA

VCE=10V, IC=500mA

R1 (31-July 2013)

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