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BUK9620-100B118

Categorysemiconductor    Discrete semiconductor   
File Size687KB,12 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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BUK9620-100B118 Parametric

Parameter NameAttribute value
Product CategoryMOSFET
ManufacturerNXP
RoHSDetails
TechnologySi
Mounting StyleSMD/SMT
Package / CaseTO-263-3
Number of Channels1 Channel
Transistor PolarityN-Channel
Vds - Drain-Source Breakdown Voltage100 V
Id - Continuous Drain Current63 A
Rds On - Drain-Source Resistance18.5 mOhms
Vgs - Gate-Source Voltage15 V
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
PackagingReel
Channel ModeEnhancement
ConfigurationSingle
Fall Time77 ns
Height4.5 mm
Length10.3 mm
Pd - Power Dissipation203 W
Rise Time116 ns
Factory Pack Quantity800
Transistor Type1 N-Channel
Typical Turn-Off Delay Time173 ns
Typical Turn-On Delay Time45 ns
Width9.4 mm
Unit Weight0.139332 oz
BUK9620-100B
N-channel TrenchMOS logic level FET
Rev. 02 — 6 May 2009
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
AEC-Q101 compliant
Low conduction losses due to low
on-state resistance
Suitable for logic level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V, 24 V and 42 V loads
Automotive and general purpose
power switching
Motors, lamps and solenoids
1.4 Quick reference data
Table 1.
V
DS
I
D
P
tot
Quick reference
Conditions
V
GS
= 5 V; T
mb
= 25 °C;
see
Figure 1;
see
Figure 3
T
mb
= 25 °C; see
Figure 2
Min
-
-
-
Typ
-
-
-
Max
100
63
203
Unit
V
A
W
drain-source voltage T
j
25 °C; T
j
175 °C
drain current
total power
dissipation
drain-source
on-state resistance
Symbol Parameter
Static characteristics
R
DSon
V
GS
= 4.5 V; I
D
= 25 A;
T
j
= 25 °C; see
Figure 11;
see
Figure 12
V
GS
= 5 V; I
D
= 25 A;
T
j
= 25 °C; see
Figure 12;
see
Figure 11
Avalanche ruggedness
E
DS(AL)S
non-repetitive
drain-source
avalanche energy
I
D
= 63 A; V
sup
100 V;
R
GS
= 50
Ω;
V
GS
= 5 V;
T
j(init)
= 25 °C; unclamped
-
-
222
mJ
-
16.4
22.3
mΩ
-
16.2
20
mΩ
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