M74HC4316
QUAD BILATERAL SWITCH
s
s
s
s
s
s
s
s
s
HIGH SPEED:
t
PD
= 13ns (TYP.) at V
CC
= 6V
LOW POWER DISSIPATION:
I
CC
= 1µA(MAX.) at V
cc
= 5V
LOW "ON" RESISTANCE:
120Ω TYP. (V
CC
- V
EE
= 2V)
50Ω TYP. (V
CC
- V
EE
= 4.5V)
35Ω TYP. (V
CC
- V
EE
= 9V)
WIDE ANALOG INPUT VOLTAGE
RANGE
±
6v
LOW CROSSTALK BETWEEN SWITCHES
FAST SWITCHING
SINE WAVE DISTORTION:
0.020 at V
CC
- V
EE
= 9V
HIGH NOISE IMMUNITY:
V
NIH
= V
NIL
= 28 % V
CC
(MIN.)
PIN AND FUNCTION COMPATIBLE WITH
74 SERIES 4316
DIP
SOP
TSSOP
ORDER CODES
PACKAGE
DIP
SOP
TSSOP
TUBE
M74HC4316B1R
M74HC4316M1R
T&R
M74HC4316RM13TR
M74HC4316TTR
DESCRIPTION
The M74HC4316 is an high speed CMOS QUAD
BILATERAL SWITCH fabricated with silicon gate
C
2
MOS technology.
This device has four independent analogue
switches. Each switch has two input/output
terminals (nI/O, nO/I) and an active high select
input (nC).
PIN CONNECTION AND IEC LOGIC SYMBOLS
When the enable input is high, all four analog
switches are off. The supply voltage for the digital
signals applied to V
CC
and GND must be whitin
the range 0 to 6 V. The voltage swing on the
analogue Inputs/Outputs can be between V
CC
(positive limit) and V
EE
(negative limit). The
voltage between V
CC
and V
EE
must not exceed
12V.
All inputs are equipped with protection circuits
against static discharge and transient excess
voltage.
July 2001
1/11
M74HC4316
LOGIC DIAGRAM
PIN DESCRIPTION
PIN No
1, 4, 10, 13
2, 3, 11, 12
7
15, 5, 6, 14
9
8
16
SYMBOL
1 to 4 I/O
1 to 4 O/I
E
1C to 4C
V
EE
GND
V
CC
NAME AND FUNCTION
Independent Inputs/Out-
puts
Independent Outputs/
Inputs
Enable Inputs (Active
LOW)
Enable Inputs (Active
High)
Negative Supply Voltage
Ground (0V)
Positive Supply Voltage
TRUTH TABLE
E
L
L
H
C
H
L
X
SWITCH FUNCTION
ON
OFF
OFF
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CC
V
I
V
I/O
I
IK
I
OK
I
O
Supply Voltage
Control Input Voltage
Switch Input/Output Voltage
DC Input Diode Current
DC Output Diode Current
DC Output Source Sink Current Per Output Pin
V
CC
- V
EE
Supply Voltage
Parameter
Value
-0.5 to +7
-0.5 to +13
-0.5 to V
CC
+ 0.5
V
EE
-0.5 to V
CC
+ 0.5
±
20
±
20
±
25
±
50
500(*)
-65 to +150
300
Unit
V
V
V
V
mA
mA
mA
mA
mW
°C
°C
I
CC
or I
GND
DC V
CC
or Ground Current
P
D
Power Dissipation
T
stg
T
L
Storage Temperature
Lead Temperature (10 sec)
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied
(*) 500mW at 65
°
C; derate to 300mW by 10mW/
°
C from 65
°
C to 85
°
C
2/11
M74HC4316
AC ELECTRICAL CHARACTERISTICS
(C
L
= 50 pF, Input t
r
= t
f
= 6ns)
Test Condition
Symbol
Parameter
V
CC
(V)
2.0
4.5
6.0
4.5
6.0
2.0
4.5
6.0
4.5
6.0
2.0
4.5
6.0
4.5
6.0
2.0
4.5
6.0
V
EE
(V)
GND
GND
GND
-4.5
-6.0
GND
GND
GND
-4.5
-6.0
GND
GND
GND
-4.5
-6.0
GND
GND
GND
T
A
= 25°C
Min.
Typ.
12
3
3
2
2
56
14
12
13
11
112
28
24
24
21
2
9
11
Max.
30
6
5
4
4
115
23
20
21
18
205
41
35
34
29
Value
-40 to 85°C -55 to 125°C Unit
Min.
Max.
40
8
7
5
5
145
29
25
26
23
255
51
43
43
36
Min.
Max.
Φ
I/O
Phase Difference
Between Input
and Output
ns
t
PZL
t
PZH
Output Enable
Time
(E, C - OUT)
R
L
= 1KΩ
ns
t
PLZ
t
PHZ
Output Disable
Time
(E, C - OUT)
R
L
= 1KΩ
ns
f
MAX
Maximum Control
Input Frequency
R
L
= 1KΩ
C
L
= 15 pF
V
OUT
= 1/2 V
CC
MHz
CAPACITIVE CHARACTERISTICS
Test Condition
Symbol
Parameter
V
CC
(V)
T
A
= 25°C
Min.
Typ.
5
4.5
4.5
5.0
GND
-4.5
-4.5
5
1
16
Max.
10
Value
-40 to 85°C
Min.
Max.
10
-55 to 125°C
Min.
Max.
10
pF
pF
pF
pF
Unit
C
IN
C
I/O
C
IOS
C
PD
Input Capacitance
Switch Terminal
Capacitance
Feed Through
Capacitance
Power Dissipation
Capacitance
(note 1)
1) C
PD
is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. I
CC(opr)
= C
PD
x V
CC
x f
IN
+ I
CC
4/11
M74HC4316
ANALOG SWITCH CHARACTERISTICS
(GND = 0V;T
A
= 25°C)
Symbol
Parameter
V
CC
(V)
Sine Wave
Distortion (THD)
f
MAX
Frequency
Response
(Switch ON)
Feed through
Attenuation
(Switch OFF)
Crosstalk (Control
Input to Signal
Output)
Crosstalk
(Between Any
Switches)
2.25
4.5
6.0
2.25
4.5
6.0
2.25
4.5
6.0
2.25
4.5
6.0
2.25
4.5
6.0
V
EE
(V)
V
IN
(V
p-p
)
Test Condition
Value Unit
Typ.
2.25
4
0.025
f
IN
= 1 KHz R
L
= 10 KΩ, C
L
= 50 pF
4.5
8
0.020 %
6.0
11
0.018
28
2.25
Adjust f
IN
voltage to obtain 0 dBm at V
OS
.
Increase f
IN
Frequency until dB meter reads -3dB
4.5
42 MHz
R
L
= 50Ω, C
L
= 10 pF, f
IN
= 1MHz sine wave
6.0
43
-50
2.25
V
IN
is centered at V
CC
/2. Adjust input for 0 dBm
R
L
= 600Ω, C
L
= 50 pF, f
IN
= 1MHz sine wave
4.5
-50
dB
6.0
-50
2.25
4.5 R
L
= 600Ω, C
L
= 50 pF, f
IN
= 1MHz square wave (t
r
= t
f
=6ns)
5
mV
6.0
-50
2.25
Adjust V
IN
to Obtain 0 dBm at input
R
L
= 600Ω, C
L
= 50 pF, f
IN
= 1MHz sine wave
4.5
-50
dB
6.0
-50
5/11
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