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BAS285-GS18

CategoryDiscrete semiconductor    diode   
File Size110KB,4 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
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BAS285-GS18 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
MakerVishay
Parts packaging codeDO-213AA
package instructionO-LELF-R2
Contacts2
Reach Compliance Codeunknown
ECCN codeEAR99
Samacsys DescriptionVISHAY - BAS285-GS18 - DIODE, SCHOTTKY, 200 MA, SOD-80
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.24 V
JEDEC-95 codeDO-213AA
JESD-30 codeO-LELF-R2
JESD-609 codee2
Humidity sensitivity level1
Maximum non-repetitive peak forward current5 A
Number of components1
Number of terminals2
Maximum operating temperature125 °C
Maximum output current0.2 A
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)250
Certification statusNot Qualified
Maximum repetitive peak reverse voltage30 V
surface mountYES
technologySCHOTTKY
Terminal surfaceTin/Silver (Sn/Ag)
Terminal formWRAP AROUND
Terminal locationEND
Maximum time at peak reflow temperature40
Base Number Matches1
BAS285
www.vishay.com
Vishay Semiconductors
Small Signal Schottky Diode
FEATURES
• Integrated
discharge
protection
ring
against
static
• Very low forward voltage
• AEC-Q101 qualified
• Material categorization: For definitions of
compliance please see
www.vishay.com/doc?99912
MECHANICAL DATA
Case:
QuadroMELF SOD-80
Weight:
approx. 34 mg
Cathode band color:
black
Packaging codes/options:
GS18/10K per 13" reel (8 mm tape), 10K/box
GS08/2.5K per 7" reel (8 mm tape), 12.5K/box
APPLICATIONS
• Applications where a very low forward voltage is required
PARTS TABLE
PART
BAS285
TYPE DIFFERENTATION
V
R
= 30 V
ORDERING CODE
BAS285-GS18 or BAS285-GS08
INTERNAL
CONSTRUCTION
Single diode
REMARKS
Tape and reel
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Reverse voltage
Peak forward surge current
Repetitive peak forward current
Forward current
Average forward current
t
p
= 10 ms
t
p
1 s
TEST CONDITION
SYMBOL
V
R
I
FSM
I
FRM
I
F
I
FAV
VALUE
30
5
300
200
200
UNIT
V
A
mA
mA
mA
THERMAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Junction to ambient air
Junction temperature
Storage temperature range
TEST CONDITION
On PC board
50 mm x 50 mm x 1.6 mm
SYMBOL
R
thJA
T
j
T
stg
VALUE
320
125
- 65 to + 150
UNIT
K/W
°C
°C
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
I
F
= 0.1 mA
I
F
= 1 mA
Forward voltage
I
F
= 10 mA
I
F
= 30 mA
I
F
= 100 mA
Reverse current
Diode capacitance
V
R
= 25 V, t
p
= 300 μs
V
R
= 1 V, f = 1 MHz
SYMBOL
V
F
V
F
V
F
V
F
V
F
I
R
C
D
MIN.
TYP.
MAX.
240
320
400
500
800
2.3
10
UNIT
mV
mV
mV
mV
mV
μA
pF
Rev. 1.9, 24-Apr-12
Document Number: 85501
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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