BAS285
www.vishay.com
Vishay Semiconductors
Small Signal Schottky Diode
FEATURES
• Integrated
discharge
protection
ring
against
static
• Very low forward voltage
• AEC-Q101 qualified
• Material categorization: For definitions of
compliance please see
www.vishay.com/doc?99912
MECHANICAL DATA
Case:
QuadroMELF SOD-80
Weight:
approx. 34 mg
Cathode band color:
black
Packaging codes/options:
GS18/10K per 13" reel (8 mm tape), 10K/box
GS08/2.5K per 7" reel (8 mm tape), 12.5K/box
APPLICATIONS
• Applications where a very low forward voltage is required
PARTS TABLE
PART
BAS285
TYPE DIFFERENTATION
V
R
= 30 V
ORDERING CODE
BAS285-GS18 or BAS285-GS08
INTERNAL
CONSTRUCTION
Single diode
REMARKS
Tape and reel
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Reverse voltage
Peak forward surge current
Repetitive peak forward current
Forward current
Average forward current
t
p
= 10 ms
t
p
1 s
TEST CONDITION
SYMBOL
V
R
I
FSM
I
FRM
I
F
I
FAV
VALUE
30
5
300
200
200
UNIT
V
A
mA
mA
mA
THERMAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Junction to ambient air
Junction temperature
Storage temperature range
TEST CONDITION
On PC board
50 mm x 50 mm x 1.6 mm
SYMBOL
R
thJA
T
j
T
stg
VALUE
320
125
- 65 to + 150
UNIT
K/W
°C
°C
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
I
F
= 0.1 mA
I
F
= 1 mA
Forward voltage
I
F
= 10 mA
I
F
= 30 mA
I
F
= 100 mA
Reverse current
Diode capacitance
V
R
= 25 V, t
p
= 300 μs
V
R
= 1 V, f = 1 MHz
SYMBOL
V
F
V
F
V
F
V
F
V
F
I
R
C
D
MIN.
TYP.
MAX.
240
320
400
500
800
2.3
10
UNIT
mV
mV
mV
mV
mV
μA
pF
Rev. 1.9, 24-Apr-12
Document Number: 85501
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
BAS285
www.vishay.com
TYPICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
P
R
- Reverse Power Dissipation (mW)
200
10
Vishay Semiconductors
160
140
120
100
80
60
40
20
0
25
50
75
100
125
150
P
R
- Limit
at 80 % V
R
R
thJA
= 540 kW
P
R
- Limit
at 100 % V
R
C
D
- Diode Capacitance (pF)
180
V
R
= 30 V
9
8
7
6
5
4
3
2
1
0
0.1
1
10
f = 1 MHz
100
15822
T
j
- Junction Temperature (°C)
15825
V
R
- Reverse Voltage (V)
Fig. 1 - Max. Reverse Power Dissipation vs. Junction Temperature
Fig. 4 - Diode Capacitance vs. Reverse Voltage
1000
V
R
= V
RRM
100
I
R
- Reverse Current (µA)
10
1
25
15823
50
75
100
125
150
T
j
- Junction Temperature (°C)
Fig. 2 - Reverse Current vs. Junction Temperature
1000
I
F
- Forward Current (mA)
T
j
= 125 °C
100
T
j
= 25 °C
10
1
0.1
0
15824
0.5
1.0
1.5
V
F
- Forward Voltage (V)
Fig. 3 - Forward Current vs. Forward Voltage
Rev. 1.9, 24-Apr-12
Document Number: 85501
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
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Disclaimer
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Revision: 08-Feb-17
1
Document Number: 91000