2N5679 2N5680
2N5681 2N5682
PNP
NPN
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COMPLEMENTARY
SILICON POWER TRANSISTORS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N5679, 2N5681
series devices are complementary silicon power
transistors, manufactured by the epitaxial planar
process, designed for general purpose amplifier
and switching applications where high voltages are
required.
MARKING: FULL PART NUMBER
TO-39 CASE
MAXIMUM RATINGS:
(TA=25°C unless otherwise noted)
SYMBOL
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Continuous Base Current
Power Dissipation
Power Dissipation (TC=25°C)
Operating and Storage Junction Temperature
Thermal Resistance
Thermal Resistance
ELECTRICAL
SYMBOL
ICBO
ICEV
ICEV
ICEO
ICEO
IEBO
BVCEO
BVCEO
VCE(SAT)
VCE(SAT)
VCE(SAT)
VBE(ON)
hFE
hFE
hfe
fT
Cob
VCEO
VEBO
IC
IB
PD
PD
TJ, Tstg
Θ
JA
Θ
JC
2N5679
2N5681
100
100
4.0
1.0
0.5
1.0
10
-65 to +200
175
17.5
MAX
1.0
1.0
1.0
10
10
1.0
100
120
0.6
1.0
2.0
1.0
150
2N5680
2N5682
120
120
UNITS
V
V
V
A
A
W
W
°C
°C/W
°C/W
UNITS
µA
µA
mA
µA
µA
µA
V
V
V
V
V
V
CHARACTERISTICS:
(TA=25°C unless otherwise noted)
TEST CONDITIONS
MIN
VCB=Rated VCBO
VCE=Rated VCEO, VEB=1.5V
VCE=Rated VCEO, VEB=1.5V, TC=150°C
VCE=70V (2N5679, 2N5681)
VCE=80V (2N5680, 2N5682)
VEB=4.0V
IC=10mA (2N5679, 2N5681)
IC=10mA (2N5680, 2N5682)
IC=250mA, IB=25mA
IC=500mA, IB=50mA
IC=1.0A, IB=200mA
VCE=2.0V IC=250mA
VCE=2.0V, IC=250mA
VCE=2.0V, IC=1.0A
VCE=1.5V, IC=0.2A, f=1.0kHz
VCE=10V, IC=100mA, f=10MHz
VCB=20V, IE=0, f=1.0MHz
40
5.0
40
30
MHz
50
pF
R2 (2-December 2013)
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nd
day air)
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REQUESTING PRODUCT PLATING
1.
2.
If requesting Tin/Lead plated devices, add the suffix “ TIN/LEAD” to the part number when
ordering (example: 2N2222A TIN/LEAD).
If requesting Lead (Pb) Free plated devices, add the suffix “ PBFREE” to the part number
when ordering (example: 2N2222A PBFREE).
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