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VS-60EPS08-M3

Description
Rectifiers New Input Diodes - TO-247-e3
CategoryDiscrete semiconductor    diode   
File Size155KB,7 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
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Rectifiers New Input Diodes - TO-247-e3

VS-60EPS08-M3 Parametric

Parameter NameAttribute value
MakerVishay
package instructionR-PSFM-T2
Reach Compliance Codeunknown
ECCN codeEAR99
Samacsys DescriptionVishay VS-60EPS08-M3, Diode, 800V 60A, 2-Pin TO-247AC
applicationHIGH VOLTAGE
Shell connectionCATHODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.09 V
JESD-30 codeR-PSFM-T2
JESD-609 codee3
Maximum non-repetitive peak forward current1000 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-40 °C
Maximum output current60 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT APPLICABLE
Maximum repetitive peak reverse voltage800 V
Maximum reverse current100 µA
surface mountNO
Terminal surfaceMatte Tin (Sn) - with Nickel (Ni) barrier
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT APPLICABLE
Base Number Matches1
VS-60EPS..PbF Series, VS-60EPS..-M3 Series
www.vishay.com
Vishay Semiconductors
High Voltage Input Rectifier Diode, 60 A
FEATURES
Base
cathode
2
2
3
1
1
Cathode
3
Anode
• Very low forward voltage drop
• 150 °C max. operating junction temperature
• Glass passivated pellet chip junction
• Designed and qualified
JEDEC
®
-JESD 47
according
to
TO-247AC modified
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
Available
APPLICATIONS
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
I
FSM
T
J
max.
Diode variation
TO-247AC modified (2 pins)
60 A
800 V to 1200 V
1.09 V
1000 A
150 °C
Single die
• Input rectification
• Vishay Semiconductors switches and output rectifiers
which are available in identical package outlines
DESCRIPTION
High voltage rectifiers optimized for very low forward
voltage drop with moderate leakage.
These devices are intended for use in main rectification
(single or three phase bridge).
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
60 A, T
J
= 25 °C
CHARACTERISTICS
Sinusoidal waveform
VALUES
60
800/1200
1000
1.09
-40 to +150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PART NUMBER
VS-60EPS08PbF, VS-60EPS08-M3
VS-60EPS12PbF, VS-60EPS12-M3
V
RSM
, MAXIMUM
V
RRM
, MAXIMUM
NON-REPETITIVE PEAK REVERSE
PEAK REVERSE VOLTAGE
VOLTAGE
V
V
800
1200
900
1300
I
RRM
AT 150 °C
mA
1
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
Maximum peak one cycle
non-repetitive surge current
Maximum I
2
t for fusing
Maximum I
2
t
for fusing
SYMBOL
I
F(AV)
I
FSM
I
2
t
I
2
t
TEST CONDITIONS
T
C
= 118 °C, 180° conduction half sine wave
10 ms sine pulse, rated V
RRM
applied
10 ms sine pulse, no
voltage
reapplied
10 ms sine pulse, rated V
RRM
applied
10 ms sine pulse, no
voltage
reapplied
t = 0.1 ms to 10 ms, no
voltage
reapplied
VALUES
60
840
1000
3530
4220
42 200
A
2
s
A
2
s
A
UNITS
Revision: 12-Feb-16
Document Number: 94345
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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