4. Switching characteristics are independent of operating junction temperatures
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2
NTGS1135P
TYPICAL CHARACTERISTICS
10
8
6
−1.4
V
4
2
0
−4.5
V
−2.0
V
−1.8
V
T
J
= 25°C
10
−2.5
V
−1.6
V
−I
D
, DRAIN CURRENT (A)
8
6
4
2
0
0.4
T
J
=
−55°C
T
J
= 25°C
T
J
= 125°C
0.6
0.8
1.0
1.2
1.4
1.6
1.8
−V
GS
, GATE−TO−SOURCE VOLTAGE (V)
V
DS
≥
−10
V
−I
D
, DRAIN CURRENT (A)
V
GS
=
−1.2
V
0
0.5
1.0
1.5
2.0
2.5
3.0
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
I
D
=
−4.6
A
T
J
= 25°C
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0
Figure 2. Transfer Characteristics
T
J
= 25°C
V
GS
=
−1.2
V
V
GS
=
−1.5
V
V
GS
=
−1.8
V
V
GS
=
−2.5
V
V
GS
=
−4.5
V
0
1.0
2.0
3.0
4.0
5.0
6.0
−V
GS
, GATE−TO−SOURCE VOLTAGE (V)
−I
D
, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate Voltage
1.4
R
DS(on)
, DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
I
D
=
−4.6
A
V
GS
=
−4.5
V
−I
DSS
, LEAKAGE (nA)
1.2
100000
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
V
GS
= 0 V
1.0
10000
T
J
= 150°C
0.8
T
J
= 125°C
0.6
−50
−25
0
25
50
75
100
125
150
1000
1
2
3
4
5
6
7
8
T
J
, JUNCTION TEMPERATURE (°C)
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
NTGS1135P
TYPICAL CHARACTERISTICS
V
GS
= 0 V
T
J
= 25°C
−V
GS
, GATE−TO−SOURCE VOLTAGE (V)
3000
2500
C, CAPACITANCE (pF)
2000
1500
1000
500
0
C
rss
0
1
2
3
4
5
6
7
8
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
C
oss
5.0
Qt
4.0
3.0
C
iss
2.0
1.0
0
Q
gs
Q
gd
T
J
= 25°C
I
D
=
−4.6
A
0
2.0 4.0
6.0 8.0
10
12
14
16
18
20
22
Q
G
, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
1000
−I
S
, SOURCE CURRENT (A)
V
DD
=
−8
V
I
D
=
−4.6
A
V
GS
=
−4.5
V
t, TIME (ns)
100
t
d(off)
t
f
t
r
t
d(on)
10
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
Figure 8. Gate−to−Source Voltage vs. Total
Charge
V
GS
= 0 V
T
J
= 25°C
1.0
1.0
10
R
G
, GATE RESISTANCE (W)
100
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
−V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
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NTGS1135P
PACKAGE DIMENSIONS
TSOP−6
CASE 318G−02
ISSUE S
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. DIMENSIONS A AND B DO NOT INCLUDE
MOLD FLASH, PROTRUSIONS, OR GATE
BURRS.
DIM
A
A1
b
c
D
E
e
L
H
E
q
MIN
0.90
0.01
0.25
0.10
2.90
1.30
0.85
0.20
2.50
0°
MILLIMETERS
NOM
MAX
1.00
1.10
0.06
0.10
0.38
0.50
0.18
0.26
3.00
3.10
1.50
1.70
0.95
1.05
0.40
0.60
2.75
3.00
10°
−
MIN
0.035
0.001
0.010
0.004
0.114
0.051
0.034
0.008
0.099
0°
INCHES
NOM
0.039
0.002
0.014
0.007
0.118
0.059
0.037
0.016
0.108
−
MAX
0.043
0.004
0.020
0.010
0.122
0.067
0.041
0.024
0.118
10°
H
E
6
1
5
2
4
3
E
b
e
c
L
q
0.05 (0.002)
A1
A
SOLDERING FOOTPRINT*
2.4
0.094
STYLE 1:
PIN 1. DRAIN
2. DRAIN
3. GATE
4. SOURCE
5. DRAIN
6. DRAIN
1.9
0.075
0.95
0.037
0.95
0.037
0.7
0.028
1.0
0.039
SCALE 10:1
mm
inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor
and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
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