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2DC4617Q-7-F

Categorysemiconductor    Discrete semiconductor   
File Size68KB,3 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
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2DC4617Q-7-F Parametric

Parameter NameAttribute value
Product CategoryBipolar Transistors - BJT
ManufacturerDiodes
RoHSDetails
Mounting StyleSMD/SMT
Package / CaseSOT-523-3
Transistor PolarityNPN
ConfigurationSingle
Collector- Emitter Voltage VCEO Max50 V
Collector- Base Voltage VCBO60 V
Emitter- Base Voltage VEBO7 V
Collector-Emitter Saturation Voltage400 mV
Maximum DC Collector Current150 mA
Gain Bandwidth Product fT180 MHz
Maximum Operating Temperature+ 150 C
DC Collector/Base Gain hfe Min120
Height0.75 mm
Length1.6 mm
Minimum Operating Temperature- 55 C
PackagingReel
Pd - Power Dissipation150 mW
Factory Pack Quantity3000
Width0.8 mm
Unit Weight0.000071 oz
2DC4617Q/R/S
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
Ultra Miniature Surface Mount Package
Complementary PNP Type Available (2DA1774Q,R,S)
Lead Free/RoHS Compliant (Note 3)
"Green" Device (Note 4 and 5)
SOT-523
Dim
A
C
B C
Min
0.15
0.75
1.45
0.90
1.50
0.00
0.60
0.10
0.10
0.45
Max
0.30
0.85
1.75
1.10
1.70
0.10
0.80
0.30
0.20
0.65
Typ
0.22
0.80
1.60
0.50
1.00
1.60
0.05
0.75
0.22
0.12
0.50
A
B
C
D
G
H
J
N
M
Mechanical Data
Case: SOT-523
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminal Connections: See diagram
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin annealed over Alloy 42
leadframe).
Marking Information: (See Page 3): 2DC4617Q: 8D
2DC4617R: 8E
2DC4617S: 8F
Ordering Information: See Page 3
Weight: 0.002 grams (approximate)
B
G
H
K
E
K
L
M
N
α
J
D
L
All Dimensions in mm
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Symbol
V
CBO
V
CEO
V
EBO
I
C
Value
60
50
7.0
150
Unit
V
V
V
mA
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
(Note 1)
Thermal Characteristics
Characteristic
@T
A
= 25°C unless otherwise specified
Symbol
P
d
R
θ
JA
T
j
, T
STG
Value
150
833
-55 to +150
Unit
mW
°C/W
°C
Power Dissipation
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
(Note 1)
(Note 1)
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS (Note 2)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 2)
DC Current Gain
@T
A
= 25°C unless otherwise specified
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
2DC4617Q
2DC4617R
2DC4617S
Min
60
50
7.0
120
180
270
180 Typ.
180 Typ.
Typ Max Unit
2.0
180
100
100
270
390
560
0.4
V
V
V
nA
nA
Test Condition
I
C
= 50μA, I
E
= 0
I
C
= 1.0mA, I
B
= 0
I
E
= 50μA, I
C
= 0
V
CB
= 60V
V
EB
= 7.0V
h
FE
V
CE(SAT)
C
obo
f
T
f
T
f
T
V
V
CE
= 6.0V, I
C
= 1.0mA
I
C
= 50mA, I
B
= 5.0mA
Collector-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Current Gain-Bandwidth Product
Current Gain-Bandwidth Product
Current Gain-Bandwidth Product
Notes:
1.
2.
3.
4.
5.
3.5 pF V
CB
= 12V, f = 1.0MHz, I
E
= 0
MHz V
CE
= 12V, I
E
= -2mA, f = 1MHz
MHz V
CE
= 12V, I
E
= 0A, f = 1MHz
V = 12V, I
C
= -2.0mA,
MHz
CE
f = 100MHz
Part mounted on FR-4 board with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
Short duration pulse test used to minimize self-heating effect.
No purposefully added lead.
Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
DS30252 Rev. 9 - 2
1 of 3
www.diodes.com
2DC4617Q/R/S
© Diodes Incorporated
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