2SB1260 / 2SB1181
PNP -1.0A -80V Middle Power Transistor
lOutline
Parameter
Value
MPT3
Base
Collector
Emitter
Base
Emitter
CPT3
Collector
Datasheet
V
CEO
I
C
-80V
-1.0A
lFeatures
1) Suitable for Middle Power Driver
2) Complementary NPN Types : 2SD1898 / 2SD1733
3) Low V
CE(sat)
V
CE(sat)
=
-0.4V
Max. (I
C
/I
B
=
-500mA/ -50mA)
4) Lead Free/RoHS Compliant.
2SB1260
(SC-62)
<SOT-89>
2SB1181
(SC-63)
<SOT-428>
lInner
circuit
Collector
lApplications
Base
Emitter
Motor driver , LED driver
Power supply
lPackaging
specifications
Part No.
2SB1260
2SB1181
Package
MPT3
CPT3
Package
size
(mm)
4540
6595
Taping
code
T100
TL
Basic
Reel size Tape width
ordering
(mm)
(mm)
unit (pcs)
180
330
12
16
1,000
2,500
Marking
BE
B1181
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© 2013 ROHM Co., Ltd. All rights reserved.
1/7
2013.07 - Rev.H
2SB1260 / 2SB1181
lAbsolute
maximum ratings
(Ta = 25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulsed
2SB1260
Power dissipation
2SB1181
Junction temperature
Range of storage temperature
*1 Pw=20ms , duty=1/2
*2 Each terminal mounted on a reference land
*3 Mounted on a ceramic board (40×40×0.7 mm)
*4 Mounted on a substrate
*5 T
C
=25°C
lElectrical
characteristics
(Ta = 25°C)
Parameter
Symbol
Collector-emitter
BV
CEO
breakdown voltage
Collector-base
BV
CBO
breakdown voltage
Emitter-base
BV
EBO
breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter
saturation voltage
DC current gain
Transition frequency
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
T
j
T
stg
P
D
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP *1
Values
-80
-80
-5
-1.0
-2.0
*2
0.5
2.0
*3
1
*4
10
*5
150
-55
to
+150
Data Sheet
Unit
V
V
V
A
A
W
W
°C
°C
Conditions
I
C
=
-1mA
I
C
=
-50mA
I
E
=
-50mA
V
CB
=
-60V
V
EB
=
-4V
I
C
=
-1A,
I
B
=
-50mA
V
CE
=
-3V,
I
C
=
-0.1A
V
CE
=
-10V,
I
E
= 50mA
f=100MH
Z
Min.
-80
-80
-5
-
-
-
120
-
-
-
Typ.
-
-
-
-
-
-
-
100
20
*6
25
*7
Max.
-
-
-
-1
-1
-0.4
390
-
-
-
Unit
V
V
V
mA
mA
V
-
MHz
pF
pF
Output capacitance
*6 2SB1260
*7 2SB1181
lh
FE
rank categories
Rank
h
FE
Q
120 to 270
C
ob
V
CB
=
-10V,
I
E
= 0A
f = 1MHz
R
180 to 390
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© 2013 ROHM Co., Ltd. All rights reserved.
2/7
2013.07 - Rev.H
2SB1260 / 2SB1181
lElectrical
characteristic curves(Ta
= 25°C)
Data Sheet
Fig.1 Ground Emitter Propagation Characteristics
-1000
Fig.2 Typical Output Characteristics
COLLECTOR CURRENT : I
C
[mA]
-100
-10
Ta=85ºC
25ºC
-40ºC
-1
-0.1
-0
-0.5
-1
-1.5
COLLECTOR CURRENT : I
C
[A]
COLECTOR TO EMITTE VOLTAGE : V
CE
[V]
V
CE
=
-5V
Pulsed
BASE TO EMITTER VOLTAGE : V
BE
[V]
Fig.3 DC Current Gain vs. Collector Current(I)
1000
V
CE
=
-3V
Fig.4 DC Current Gain vs. Collector Current(II)
1000
Ta=25ºC
DC CURRENT GAIN : h
FE
DC CURRENT GAIN : h
FE
100
Ta=85ºC
25ºC
-40ºC
100
V
CE
=
-3V
-1V
10
-1
-10
-100
-1000
-10000
10
-1
-10
-100
-1000
-10000
COLLECTOR CURRENT : I
C
[mA]
COLLECTOR CURRENT : I
C
[mA]
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© 2013 ROHM Co., Ltd. All rights reserved.
3/7
2013.07 - Rev.H
2SB1260 / 2SB1181
lElectrical
characteristic curves(Ta
= 25°C)
Data Sheet
Fig.5 Collector-Emitter Saturation Voltage
vs. Collector Current (I)
-1
Fig.6 Collector-Emitter Saturation Voltage
vs. Collector Current (II)
-1
COLLECTOR-EMITTER
SATURATION VOLTAGE : V
CE(sat)
[V]
COLLECTOR-EMITTER
SATURATION VOLTAGE : V
CE(sat)
[V]
I
C
/ I
B
= 10
Ta=25ºC
-0.1
Ta=85ºC
25ºC
-40ºC
-0.1
I
C
/ I
B
=20/1
10/1
-0.01
-1
-10
-100
-1000
-10000
-0.01
-1
-10
-100
-1000
-10000
COLLECTOR CURRENT : I
C
[mA]
COLLECTOR CURRENT : I
C
[mA]
Fig.7 Base-Emitter Saturation Voltage
vs. Collector Current
-10
Fig.8 Gain Bandwidth Product
vs. Emitter Current
TRANSITION FREQUENCY : f
T
[MHz]
BASE-EMITTER
SATURATION VOLTAGE : V
BE(sat)
[V]
I
C
/ I
B
= 10
-1
Ta=
-40ºC
25ºC
85ºC
-0.1
-1
-10
-100
-1000
-10000
COLLECTOR CURRENT : I
C
[mA]
EMITTER CURRENT :I
E
[mA]
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© 2013 ROHM Co., Ltd. All rights reserved.
4/7
2013.07 - Rev.H
2SB1260 / 2SB1181
lElectrical
characteristic curves(Ta
= 25°C)
Data Sheet
COLLECTOR OUTPUT CAPACITANCE : Cob [pF]
Fig.9 Collector output capacitance vs.
Collector-Base Voltage
COLLECTOR CURRENT : I
C
[A]
Fig.10 Safe Operating Area
-10
2SB1260
-1
10ms
-0.1
100ms
1ms
DC
(Mounted on a
reference land)
-0.01
Ta=25ºC
Single non repetitive pulse
-0.1
-1
-10
-100
-0.001
COLLECTOR - BASE VOLTAGE : V
CB
[V]
COLLECTOR TO EMITTER VOLTAGE : V
CE
[V]
Fig.11 Safe Operating Area
-10
2SB1181
COLLECTOR CURRENT : I
C
[A]
100ms
10ms
-1
-0.1
DC
-0.01
Ta=25ºC
Single non repetitive pulse
-0.1
-1
-10
-100
-0.001
COLLECTOR TO EMITTER VOLTAGE : V
CE
[V]
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© 2013 ROHM Co., Ltd. All rights reserved.
5/7
2013.07 - Rev.H
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