TK100E06N1
MOSFETs
Silicon N-channel MOS (U-MOS-H)
TK100E06N1
1. Applications
•
Switching Voltage Regulators
2. Features
(1)
(2)
(3)
Low drain-source on-resistance: R
DS(ON)
= 1.9 mΩ (typ.) (V
GS
= 10 V)
Low leakage current: I
DSS
= 10
µA
(max) (V
DS
= 60 V)
Enhancement mode: V
th
= 2.0 to 4.0 V (V
DS
= 10 V, I
D
= 1.0 mA)
3. Packaging and Internal Circuit
1: Gate
2: Drain (heatsink)
3: Source
TO-220
25
4. Absolute Maximum Ratings (Note) (T
a
= 25
unless otherwise specified)
Characteristics
Drain-source voltage
Gate-source voltage
Drain current (DC)
Drain current (DC)
Drain current (pulsed)
Power dissipation
Single-pulse avalanche energy
Avalanche current
Channel temperature
Storage temperature
(t = 1 ms)
(T
c
= 25)
(Note 4)
(Silicon limit)
(Note 1), (Note 2)
(Note 1), (Note 3)
(Note 1)
Symbol
V
DSS
V
GSS
I
D
I
D
I
DP
P
D
E
AS
I
AR
T
ch
T
stg
Rating
60
±20
263
100
627
255
413
100
150
-55 to 150
W
mJ
A
A
Unit
V
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Start of commercial production
1
2012-04
2014-06-30
Rev.4.0
TK100E06N1
5. Thermal Characteristics
Characteristics
Channel-to-case thermal resistance
Channel-to-ambient thermal resistance
Symbol
R
th(ch-c)
R
th(ch-a)
Max
0.49
83.3
Unit
/W
Note 1: Ensure that the channel temperature does not exceed 150.
Note 2: Limited by silicon chip capability. Package limit is 100A.
Note 3: Device mounted with heatsink so that R
th(ch-a)
becomes 2.77/W.
Note 4: V
DD
= 48 V, T
ch
= 25 (initial), L = 31.8
µH,
I
AR
= 100 A
Note:
This transistor is sensitive to electrostatic discharge and should be handled with care.
2
2014-06-30
Rev.4.0
TK100E06N1
6. Electrical Characteristics
6.1. Static Characteristics (T
a
= 25
unless otherwise specified)
25
Characteristics
Gate leakage current
Drain cut-off current
Drain-source breakdown voltage
Drain-source breakdown voltage
Gate threshold voltage
Drain-source on-resistance
(Note 5)
Symbol
I
GSS
I
DSS
V
(BR)DSS
V
(BR)DSX
V
th
R
DS(ON)
Test Condition
V
GS
=
±20
V, V
DS
= 0 V
V
DS
= 60 V, V
GS
= 0 V
I
D
= 10 mA, V
GS
= 0 V
I
D
= 10 mA, V
GS
= -20 V
V
DS
= 10 V, I
D
= 1.0 mA
V
GS
= 10 V, I
D
= 50 A
Min
60
45
2.0
Typ.
1.9
Max
±0.1
10
4.0
2.3
mΩ
V
Unit
µA
Note 5: If a reverse bias is applied between gate and source, this device enters V
(BR)DSX
mode. Note that the drain-
source breakdown voltage is lowered in this mode.
6.2. Dynamic Characteristics (T
a
= 25
unless otherwise specified)
25
Characteristics
Input capacitance
Reverse transfer capacitance
Output capacitance
Gate resistance
Switching time (rise time)
Switching time (turn-on time)
Switching time (fall time)
Switching time (turn-off time)
Symbol
C
iss
C
rss
C
oss
r
g
t
r
t
on
t
f
t
off
See Figure 6.2.1.
Test Condition
V
DS
= 30 V, V
GS
= 0 V, f = 1 MHz
Min
Typ.
10500
50
3500
3.0
67
110
64
180
Max
Ω
ns
Unit
pF
Fig. 6.2.1 Switching Time Test Circuit
25
6.3. Gate Charge Characteristics (T
a
= 25
unless otherwise specified)
Characteristics
Total gate charge (gate-source plus
gate-drain)
Gate-source charge 1
Gate-drain charge
Gate switch charge
Symbol
Q
g
Q
gs1
Q
gd
Q
SW
Test Condition
V
DD
≈
48 V, V
GS
= 10 V, I
D
= 100 A
Min
Typ.
140
44
38
56
Max
Unit
nC
3
2014-06-30
Rev.4.0
TK100E06N1
6.4. Source-Drain Characteristics (T
a
= 25
unless otherwise specified)
25
Characteristics
Reverse drain current (DC)
Reverse drain current (pulsed)
Diode forward voltage
Reverse recovery time
Reverse recovery charge
(Note 7)
(Note 7)
(Note 6)
(Note 6)
Symbol
I
DR
I
DRP
V
DSF
t
rr
Q
rr
I
DR
= 100 A, V
GS
= 0 V
I
DR
= 100 A, V
GS
= 0 V
-dI
DR
/dt = 100 A/µs
Test Condition
Min
Typ.
100
220
Max
100
627
-1.2
V
ns
nC
Unit
A
Note 6: Ensure that the channel temperature does not exceed 150.
Note 7: Ensure that V
DS
peak does not exceed V
DSS
.
7. Marking
Fig. 7.1 Marking
4
2014-06-30
Rev.4.0
TK100E06N1
8. Characteristics Curves (Note)
Fig. 8.1 I
D
- V
DS
Fig. 8.2 I
D
- V
DS
Fig. 8.3 I
D
- V
GS
Fig. 8.4 V
DS
- V
GS
Fig. 8.5 R
DS(ON)
- I
D
Fig. 8.6 R
DS(ON)
- T
a
5
2014-06-30
Rev.4.0
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