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74AUP1G09GM132

Categorysemiconductor    logic   
File Size926KB,19 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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Parameter NameAttribute value
Product CategoryLogic Gates
ManufacturerNXP
RoHSDetails
Low Level Output Current1.9 mA
PackagingReel
Factory Pack Quantity5000
74AUP1G09
Low-power 2-input AND gate with open-drain
Rev. 4 — 28 June 2012
Product data sheet
1. General description
The 74AUP1G09 provides the single 2-input AND gate with an open-drain output. The
output of the device is an open-drain and can be connected to other open-drain outputs to
implement active-LOW wired-OR or active-HIGH wired-AND functions.
Schmitt trigger action at all inputs makes the circuit tolerant to slower input rise and fall
times across the entire V
CC
range from 0.8 V to 3.6 V.
This device ensures a very low static and dynamic power consumption across the entire
V
CC
range from 0.8 V to 3.6 V.
This device is fully specified for partial Power-down applications using I
OFF
.
The I
OFF
circuitry disables the output, preventing the damaging backflow current through
the device when it is powered down.
2. Features and benefits
Wide supply voltage range from 0.8 V to 3.6 V
High noise immunity
Complies with JEDEC standards:
JESD8-12 (0.8 V to 1.3 V)
JESD8-11 (0.9 V to 1.65 V)
JESD8-7 (1.2 V to 1.95 V)
JESD8-5 (1.8 V to 2.7 V)
JESD8-B (2.7 V to 3.6 V)
ESD protection:
HBM JESD22-A114F Class 3A exceeds 5000 V
MM JESD22-A115-A exceeds 200 V
CDM JESD22-C101E exceeds 1000 V
Low static power consumption; I
CC
= 0.9
µA
(maximum)
Latch-up performance exceeds 100 mA per JESD 78 Class II
Inputs accept voltages up to 3.6 V
Low noise overshoot and undershoot < 10 % of V
CC
I
OFF
circuitry provides partial Power-down mode operation
Multiple package options
Specified from
−40 °C
to +85
°C
and
−40 °C
to +125
°C

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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