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PTZTE2530A

Description
MOSFET 60V P-Ch PowerTrench
CategoryDiscrete semiconductor    diode   
File Size314KB,8 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Environmental Compliance
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PTZTE2530A Overview

MOSFET 60V P-Ch PowerTrench

PTZTE2530A Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerROHM Semiconductor
package instructionR-PDSO-C2
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresHIGH SURGE WITHSTAND LEVEL
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeZENER DIODE
JESD-30 codeR-PDSO-C2
JESD-609 codee1
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
polarityUNIDIRECTIONAL
Maximum power dissipation1 W
Certification statusNot Qualified
Nominal reference voltage30 V
Maximum reverse current10 µA
surface mountYES
technologyZENER
Terminal surfaceTin/Silver/Copper (Sn/Ag/Cu)
Terminal formC BEND
Terminal locationDUAL
Maximum time at peak reflow temperature10
Maximum voltage tolerance6.67%
Working test current10 mA
PTZ30B
Diodes
Zener diode
PTZ30B
Applications
Dimensions
(Unit : mm)
Land size figure
(Unit : mm)
Voltage regulation
Features
1) Small power mold type. (PMDS)
2) High ESD tolerance
Construction
Silicon epitaxial planar
Structure
Taping dimensions
(Unit : mm)
Absolute maximum ratings
(Ta=25 C)
Param eter
P ower dis s ipation
J unction tem perature
S torage tem perature
Sym bol
P
Tj
Ts tg
Lim its
1000
150
-55 to +150
Unit
mW
Rev.E
1/4

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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