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BLF578112

Categorysemiconductor    Discrete semiconductor   
File Size1MB,14 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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BLF578112 Parametric

Parameter NameAttribute value
Product CategoryRF MOSFET Transistors
ManufacturerNXP
RoHSDetails
Transistor PolarityN-Channel
Id - Continuous Drain Current88 A
Vds - Drain-Source Breakdown Voltage110 V
Rds On - Drain-Source Resistance70 mOhms
TechnologySi
Gain24 dB
Output Power1.2 kW
Maximum Operating Temperature+ 150 C
Mounting StyleSMD/SMT
Package / CaseSOT-539A-5
PackagingTube
ConfigurationDual
Operating Frequency225 MHz
Factory Pack Quantity60
TypeRF Power MOSFET
Vgs - Gate-Source Voltage11 V
Vgs th - Gate-Source Threshold Voltage1.7 V
BLF578
Power LDMOS transistor
Rev. 4 — 1 December 2016
Product data sheet
1. Product profile
1.1 General description
A 1200 W LDMOS power transistor for broadcast applications and industrial applications
in the HF to 500 MHz band.
Table 1.
Application information
f
(MHz)
CW
pulsed RF
108
225
V
DS
(V)
50
50
P
L
(W)
1000
1200
G
p
(dB)
26
24
D
(%)
75
71
Mode of operation
1.2 Features and benefits
Typical pulsed performance at frequency of 225 MHz, a supply voltage of 50 V and an
I
Dq
of 40 mA, a t
p
of 100
s
with
of 20 %:
Output power = 1200 W
Power gain = 24 dB
Efficiency = 71 %
Easy power control
Integrated ESD protection
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (10 MHz to 500 MHz)
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
Industrial, scientific and medical applications
Broadcast transmitter applications
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