BAV100/101/102/103
Taiwan Semiconductor
Small Signal Product
CREAT BY ART
Hermetically Sealed Glass High Voltage Switching Diodes
FEATURES
- High voltage switching device
- Ideal for automated placement
- Hermetically sealed glass
- Compression bonded construction
- All external surfaces are corrosion
resistant and leads are readily solderable
- RoHS compliant
MINI MELF
MECHANICAL DATA
- Polarity: Indicated by black cathode band
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25℃ unless otherwise noted)
PARAMETER
SYMBOL
P
D
V
RRM
I
F(AV)
Pulse Width = 1.0 s
Pulse Width = 1.0
μs
I
FSM
T
J
, T
STG
VALUE
500
250
200
1.0
4.0
-65 to +200
UNIT
mW
V
mA
A
o
Power Dissipation
Repetitive Peak Reverse Voltage
Average Rectified Forward Current
Non-Repetitive Peak Forward
Surge Current
Operating and Storage Temperature Range
Electrical Characteristics
PARAMETER
BAV100
Breakdown Voltage
BAV101
BAV102
BAV103
Forward Voltage
BAV100
Peak Reverse Current
BAV101
BAV102
BAV103
Thermal Resistance, Junction to Ambient
Junction Capacitance
Reverse Recovery Time
V
R
= 0 , f = 1.0 MHz
(Note)
I
R
= 100
μA
I
R
= 100
μA
I
R
= 100
μA
I
R
= 100
μA
C
SYMBOL
MIN
60
120
200
250
-
MAX
UNIT
B
V
-
V
I
F
= 100 mA
V
R
= 50 V
V
R
= 100 V
V
R
= 150 V
V
R
= 200 V
V
F
1.0
100
100
100
100
350
o
V
I
R
-
nA
R
θJA
C
J
t
rr
-
-
5.0
50
C/W
pF
ns
Notes : Reverse recovery test conditions : I
F
= I
R
= 30 mA , I
rr
= 30 mA , R
L
= 100
Ω
Document Number: DS_S1501002
Version: B15
BAV100/101/102/103
Taiwan Semiconductor
Small Signal Product
CREAT BY ART
RATINGS AND CHARACTERISTICS CURVES
(T
A
=25°C unless otherwise noted)
Fig. 1 Reverse Current VS. Junction Temperature
1000
100
10
1
0.1
0.01
0
40
80
120
(
o
C)
160
200
T
j
- Junction Temperature
V
R
= V
RRM
1000
Fig. 2 Forward Current VS. Forward Voltage
I
R
- Reverse Current (uA)
I
F
- Forward Current (mA)
Scattering Limit
100
T
j
=25
o
C
Scattering Limit
10
1
0.1
0
0.4
0.8
1.2
1.6
2
V
F
- Forward Voltage (V)
Fig. 3 Differential Forward Resistance VS. Forward Current
1000
r
f
- Differential Forward Resistance (Ohm)
100
10
1
0.1
1
10
100
I
F
- Forward Current (mA)
Document Number: DS_S1501002
Version: B15
BAV100/101/102/103
Taiwan Semiconductor
Small Signal Product
ORDER INFORMATION (EXAMPLE)
BAV100 L0G
Green compound code
Packing code
Part no.
DIMENSIONS
MINI MELF
C
DIM.
A
B
C
Unit (mm)
Min
3.30
1.40
0.20
Max
3.70
1.60
0.50
Unit (inch)
Min
0.130
0.055
0.008
Max
0.146
0.063
0.020
B
A
SUGGESTED PAD LAYOUT
Unit (mm)
Typ.
1.25
2.00
2.50
5.00
Unit (inch)
Typ.
0.049
0.079
0.098
0.197
DIM.
A
B
C
D
Document Number: DS_S1501002
Version: B15
BAV100/101/102/103
Taiwan Semiconductor
Small Signal Product
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied,to
any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or seling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
Document Number: DS_S1501002
Version: B15
京公网安备 11010802033920号
EEWORLD
