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BT136S-800E118

Description
Battery Management Charge mgnt contr
Categorysemiconductor    Discrete semiconductor   
File Size254KB,13 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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Battery Management Charge mgnt contr

BT136S-800E118 Parametric

Parameter NameAttribute value
Product CategoryTriacs
ManufacturerNXP
RoHSDetails
PackagingReel
Factory Pack Quantity2500
Unit Weight0.012346 oz
BT136S-800E
4Q Triac
21 August 2017
Product data sheet
1. General description
Planar passivated sensitive gate four quadrant triac in a SOT428 (DPAK) surface-mountable
plastic package intended for use in general purpose bidirectional switching and phase
control applications. This sensitive gate "series E" triac is intended to be interfaced directly to
microcontrollers, logic integrated circuits and other low power gate trigger circuits.
2. Features and benefits
Direct triggering from low power drivers and logic ICs
High blocking voltage capability
Low holding current for low current loads and lowest EMI at commutation
Planar passivated for voltage ruggedness and reliability
Sensitive gate
Surface mountable package
Triggering in all four quadrants
3. Applications
General purpose motor controls
General purpose switching
4. Quick reference data
Table 1. Quick reference data
Symbol
V
DRM
I
T(RMS)
I
TSM
Parameter
repetitive peak off-
state voltage
RMS on-state current
full sine wave; T
mb
≤ 107 °C;
Fig. 1;
Fig. 2; Fig. 3
Conditions
Min
-
-
-
-
-
V
D
= 12 V; I
T
= 0.1 A; T2+ G+;
T
j
= 25 °C;
Fig. 7
V
D
= 12 V; I
T
= 0.1 A; T2+ G-;
T
j
= 25 °C;
Fig. 7
-
-
Typ
-
-
-
-
-
2.5
4
Max
800
4
25
27
125
10
10
Unit
V
A
A
A
°C
mA
mA
non-repetitive peak on- full sine wave; T
j(init)
= 25 °C;
t
p
= 20 ms;
Fig. 4; Fig. 5
state current
full sine wave; T
j(init)
= 25 °C;
t
p
= 16.7 ms
T
j
I
GT
junction temperature
gate trigger current
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