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BAS40-06LT1

CategoryDiscrete semiconductor    diode   
File Size70KB,3 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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BAS40-06LT1 Parametric

Parameter NameAttribute value
Brand NameON Semiconductor
Is it lead-free?Contains lead
MakerON Semiconductor
Parts packaging codeSOT-23
package instructionMINIATURE, CASE 318-08, 3 PIN
Contacts3
Manufacturer packaging code318-08
Reach Compliance Codenot_compliant
ECCN codeEAR99
Other featuresHIGH SPEED SWITCH
ConfigurationCOMMON ANODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1 V
JEDEC-95 codeTO-236AB
JESD-30 codeR-PDSO-G3
JESD-609 codee0
Humidity sensitivity level1
Number of components2
Number of terminals3
Maximum operating temperature150 °C
Maximum output current0.12 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)240
Maximum power dissipation0.225 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage40 V
surface mountYES
technologySCHOTTKY
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature30
BAS40-06LT1G,
SBAS40-06LT1G
Common Anode Schottky
Barrier Diodes
These Schottky barrier diodes are designed for high speed
switching applications, circuit protection, and voltage clamping.
Extremely low forward voltage reduces conduction loss. Miniature
surface mount package is excellent for hand held and portable
applications where space is limited.
Features
www.onsemi.com
40 VOLTS
SCHOTTKY BARRIER DIODE
Extremely Fast Switching Speed
Low Forward Voltage
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Reverse Voltage
Symbol
V
R
Value
40
Unit
V
ANODE
3
SOT−23 (TO−236)
CASE 318
STYLE 12
CATHODE
1
2
CATHODE
MARKING DIAGRAM
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Forward Power Dissipation
@ T
A
= 25°C
Derate above 25°C
Operating Junction and Storage
Temperature Range
Forward Continuous Current
Single Forward Current
t
v
1s
t
v
10 ms
Thermal Resistance (Note 1)
Junction−to−Ambient (Note 2)
1. FR−4 @ minimum pad.
2. FR−4 @ 1.0 x 1.0 in pad.
Symbol
P
F
225
1.8
T
J
, T
stg
I
FM
I
FSM
200
600
R
qJA
508
311
°C/W
−55 to +150
120
mW
mW/°C
°C
mA
mA
Max
Unit
L2 M
G
G
L2 = Specific Device Code
M = Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
BAS40−06LT1G
SBAS40−06LT1G
Package
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
Shipping
3,000 /
Tape & Reel
3,000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 1997
1
October, 2016 − Rev. 9
Publication Order Number:
BAS40−06LT1/D
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