AUTOMOTIVE GRADE
Features
Advanced Planar Technology
Low On-Resistance
Logic Level Gate Drive
Dynamic dV/dT Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
AUIRLR3410
HEXFET
®
Power MOSFET
V
DSS
R
DS(on)
I
D
D
100V
max.
105m
17A
Description
Specifically designed for Automotive applications, this Stripe Planar
design of HEXFET® Power MOSFETs utilizes the latest
processing techniques to achieve low on-resistance per silicon
area. This benefit combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient and
reliable device for use in Automotive and a wide variety of other
applications.
Base part number
AUIRLR3410
Package Type
D-Pak
G
S
D-Pak
AUIRLR3410
G
Gate
D
Drain
S
Source
Standard Pack
Form
Quantity
Tube
75
Tape and Reel Left
3000
Orderable Part Number
AUIRLR3410
AUIRLR3410TRL
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Parameter
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Avalanche Current
Repetitive Avalanche Energy
Pead Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Max.
17
12
60
79
0.53
± 16
150
9.0
7.9
5.0
-55 to + 175
300
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Symbol
R
JC
R
JA
R
JA
Parameter
Junction-to-Case
Junction-to-Ambient ( PCB Mount)
Junction-to-Ambient
Typ.
–––
–––
–––
Max.
1.9
50
110
Units
°C/W
HEXFET® is a registered trademark of Infineon.
*Qualification
standards can be found at
www.infineon.com
1
2015-10-29
Static @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
V
(BR)DSS
/T
J
R
DS(on)
V
GS(th)
gfs
I
DSS
I
GSS
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Trans conductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
AUIRLR3410
Min. Typ. Max. Units
Conditions
100 ––– –––
V V
GS
= 0V, I
D
= 250µA
––– 0.122 ––– V/°C Reference to 25°C, I
D
= 1mA
––– ––– 0.105
V
GS
= 10V, I
D
= 10A
––– ––– 0.125
V
GS
= 5.0V, I
D
= 10A
––– ––– 0.155
V
GS
= 4.0V, I
D
= 9.0A
1.0
–––
2.0
V V
DS
= V
GS
, I
D
= 250µA
7.7
––– –––
S V
DS
= 25V, I
D
= 9.0A
––– –––
25
V
DS
= 100 V, V
GS
= 0V
µA
––– ––– 250
V
DS
= 80V,V
GS
= 0V,T
J
=150°C
––– ––– 100
V
GS
= 16V
nA
––– ––– -100
V
GS
= -16V
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min.
–––
–––
–––
–––
–––
–––
–––
–––
7.2
53
30
26
4.5
7.5
800
160
90
34
4.8
20
–––
–––
–––
–––
–––
–––
–––
–––
–––
I
D
= 9.0A
nC
V
DS
= 80V
V
GS
= 5.0V
V
DD
= 50V
I
D
= 9.0A
ns
R
G
= 6.0
V
GS
= 5.0V
Between lead,
6mm (0.25in.)
nH
from package
and center of die contact
V
GS
= 0V
pF
V
DS
= 25V
ƒ = 1.0MHz
Conditions
MOSFET symbol
showing the
A
integral reverse
p-n junction diode.
V T
J
= 25°C,I
S
= 9.0A,V
GS
= 0V
ns T
J
= 25°C ,I
F
= 9.0A
nC di/dt = 100A/µs
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
Diode Characteristics
Parameter
Continuous Source Current
I
S
(Body Diode)
Pulsed Source Current
I
SM
(Body Diode)
V
SD
Diode Forward Voltage
Reverse Recovery Time
t
rr
Q
rr
Reverse Recovery Charge
t
on
Forward Turn-On Time
Typ. Max. Units
–––
–––
–––
140
740
17
60
1.3
210
1100
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Notes:
Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11)
V
DD
= 25V, starting T
J
= 25°C, L = 3.1mH, R
G
= 25, I
AS
= 9.0A, V
GS
=10V. (See fig. 12)
I
SD
9.0A,
di/dt
540A/µs,
V
DD
V
(BR)DSS
, T
J
175°C.
Pulse width
300µs;
duty cycle
2%.
Uses IRL530N data and test conditions.
This is applied for L
S
of D-PAK is measured between lead and center of die contact.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to
application note #AN-994 .
R
is measured at T
J
approximately 90°C.
2
2015-10-29
AUIRLR3410
100
I
D
, Drain-to-Source Current (A)
I
D
, Drain-to-Source Current (A)
VGS
TOP
15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
100
VGS
15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
TOP
10
10
2.5V
1
1
2.5V
20µs PULSE WIDTH
T
J
= 25°C
1
10
0.1
0.1
100
A
0.1
0.1
20µs PULSE WIDTH
T
J
= 175°C
1
10
100
A
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig. 1
Typical Output Characteristics
Fig. 2
Typical Output Characteristics
100
3.0
T
J
= 25°C
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= 15A
I
D
, Drain-to-Source Current (A)
2.5
T
J
= 175°C
10
2.0
1.5
1
1.0
0.5
0.1
2
3
4
5
6
V
DS
= 50V
20µs PULSE WIDTH
7
8
9
10
A
0.0
-60 -40 -20
0
20
40
60
V
GS
= 10V
80 100 120 140 160 180
A
V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (°C)
Fig. 3
Typical Transfer Characteristics
Fig. 4
Normalized On-Resistance
Vs. Temperature
2015-10-29
3
AUIRLR3410
1400
1200
V
GS
, Gate-to-Source Voltage (V)
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
15
I
D
= 9.0A
V
DS
= 80V
V
DS
= 50V
V
DS
= 20V
12
C, Capacitance (pF)
1000
C
iss
800
9
600
C
oss
400
6
C
rss
200
3
0
1
10
100
A
0
0
10
20
FOR TEST CIRCUIT
SEE FIGURE 13
30
40
50
A
V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge vs.
Gate-to-Source Voltage
100
1000
I
SD
, Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
T
J
= 175°C
I
D
, Drain Current (A)
100
10
10µs
T
J
= 25°C
10
100µs
1
0.4
0.6
0.8
1.0
V
GS
= 0V
1.2
A
1
1
T
C
= 25°C
T
J
= 175°C
Single Pulse
10
1ms
10ms
100
1.4
1000
A
V
SD
, Source-to-Drain Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig. 7
Typical Source-to-Drain Diode
Forward Voltage
4
Fig 8.
Maximum Safe Operating Area
2015-10-29
AUIRLR3410
20
I
D
, Drain Current (A)
15
10
5
Fig 10a.
Switching Time Test Circuit
0
25
50
75
100
125
150
175
T
C
, Case Temperature ( °C)
Fig 9.
Maximum Drain Current Vs.
Case Temperature
Fig 10b.
Switching Time Waveforms
10
Thermal Response (Z
thJC
)
1 D = 0.50
0.20
0.10
0.05
0.1
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.0001
0.001
0.01
0.1
1
0.01
0.00001
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
5
2015-10-29
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