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30EPH06

CategoryDiscrete semiconductor    diode   
File Size92KB,7 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
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Parameter NameAttribute value
Is it Rohs certified?incompatible
Parts packaging codeTO-247
package instructionR-PSFM-T2
Contacts3
Reach Compliance Codeunknown
Other featuresFREE WHEELING DIODE, SNUBBER DIODE
applicationHYPER FAST RECOVERY
Shell connectionCATHODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)2.3 V
JEDEC-95 codeTO-247
JESD-30 codeR-PSFM-T2
JESD-609 codee0
Maximum non-repetitive peak forward current300 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature175 °C
Maximum output current30 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage600 V
Maximum reverse recovery time0.035 µs
surface mountNO
Terminal surfaceTIN LEAD
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
30EPH06
Vishay High Power Products
Hyperfast Rectifier,
30 A FRED Pt
TM
FEATURES
• Hyperfast recovery time
Base
common
cathode
2
• Low forward voltage drop
• Low leakage current
• 175 °C operating junction temperature
• Single diode device
• Designed and qualified for industrial level
DESCRIPTION/APPLICATIONS
TO-247AC modified
1
Cathode
3
Anode
PRODUCT SUMMARY
t
rr
(typical)
I
F(AV)
V
R
28 ns
30 A
600 V
State of the art hyperfast recovery rectifiers designed with
optimized performance of forward voltage drop, hyperfast
recovery time and soft recovery.
The planar structure and the platinum doped life time
control guarantee the best overall performance, ruggedness
and reliability characteristics.
These devices are intended for use in PFC boost stage in
the AC-DC section of SMPS, inverters or as freewheeling
diodes.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Peak repetitive reverse voltage
Average rectified forward current
Non-repetitive peak surge current
Operating junction and storage temperatures
SYMBOL
V
RRM
I
F(AV)
I
FSM
T
J
, T
Stg
T
C
= 116 °C
T
J
= 25 °C
TEST CONDITIONS
VALUES
600
30
300
- 65 to 175
UNITS
V
A
°C
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage,
blocking voltage
Forward voltage
SYMBOL
V
BR
,
V
R
V
F
I
R
C
T
L
S
I
R
= 100 µA
I
F
= 30 A
I
F
= 30 A, T
J
= 150 °C
V
R
= V
R
rated
T
J
= 150 °C, V
R
= V
R
rated
V
R
= 600 V
Measured lead to lead 5 mm from package body
TEST CONDITIONS
MIN.
600
-
-
-
-
-
-
TYP.
-
2.0
1.34
0.3
60
33
3.5
MAX.
-
2.6
1.75
50
500
-
-
µA
pF
nH
V
UNITS
Reverse leakage current
Junction capacitance
Series inductance
Document Number: 93017
Revision: 02-Jun-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
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