DISCRETE SEMICONDUCTORS
DATA SHEET
k, halfpage
M3D102
BAP51-04W
General purpose PIN diode
Preliminary specification
2002 Feb 19
Philips Semiconductors
Preliminary specification
General purpose PIN diode
FEATURES
•
Two elements in series configuration in a small SMD
plastic package
•
Low diode capacitance
•
Low diode forward resistance.
APPLICATIONS
handbook, halfpage
BAP51-04W
PINNING
PIN
1
2
3
3
DESCRIPTION
anode
cathode
common connection
3
•
General RF applications.
1
2
DESCRIPTION
Two planar PIN diodes in series configuration in a SOT323
small SMD plastic package.
1
Top view
Marking code:
W6-
2
MAM391
Fig.1 Simplified outline (SOT323) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
Per diode
V
R
I
F
P
tot
T
stg
T
j
continuous reverse voltage
continuous forward current
total power dissipation
storage temperature
junction temperature
T
s
=
90
°C
−
−
−
−65
−65
50
50
240
+150
+150
V
mA
mW
°C
°C
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
2002 Feb 19
2
Philips Semiconductors
Preliminary specification
General purpose PIN diode
ELECTRICAL CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
Per diode
V
F
V
R
I
R
C
d
forward voltage
reverse voltage
reverse current
diode capacitance
I
F
= 50 mA
I
R
= 10
µA
V
R
= 50 V
V
R
= 0; f = 1 MHz
V
R
= 1 V; f = 1 MHz
V
R
= 5 V; f = 1 MHz
r
D
diode forward resistance
I
F
= 0.5 mA; f = 100 MHz; note 1
I
F
= 1 mA; f = 100 MHz; note 1
I
F
= 10 mA; f = 100 MHz; note 1
τ
L
charge carrier life time
when switched from I
F
= 10 mA to
I
R
= 6 mA; R
L
= 100
Ω;
measured at I
R
= 3 mA
I
F
= 10 mA; f = 100 MHz
−
50
−
−
−
−
−
−
−
−
PARAMETER
CONDITIONS
MIN.
BAP51-04W
TYP.
MAX.
UNIT
0.95
−
−
0.4
0.3
0.2
5.5
3.6
1.5
550
1.1
−
100
−
0.55
0.35
9
6.5
2.5
−
V
V
nA
pF
pF
pF
Ω
Ω
Ω
ns
L
S
Note
series inductance
−
1.6
−
nH
1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-s
PARAMETER
thermal resistance from junction to soldering point
VALUE
250
UNIT
K/W
2002 Feb 19
3
Philips Semiconductors
Preliminary specification
General purpose PIN diode
GRAPHICAL DATA
BAP51-04W
handbook, halfpage
10
2
MLD507
rD
(Ω)
10
500
handbook, halfpage
Cd
(fF)
400
MLD508
300
200
1
100
10
−1
10
−1
1
10
IF (mA)
10
2
0
0
4
8
12
16
VR (V)
20
f = 100 MHz; T
j
= 25
°
C.
f = 100 MHz; T
j
= 25
°
C.
Fig.2
Forward resistance as a function of forward
current; typical values.
Fig.3
Diode capacitance as a function of reverse
voltage; typical values.
MGS659
handbook, halfpage
|S |
2
0
21
(dB)
−0.5
handbook, halfpage
s
2
0
MLD509
21
(dB)
−10
(1)
(2)
(3)
−1
−20
−1.5
−30
−2
−40
−2.5
0.5
(1) I
F
= 10 mA.
(2) I
F
= 1 mA
(3) I
F
= 0.5 mA
1
1.5
2
2.5
f (GHz)
3
−50
0.5
1
1.5
2
2.5
f (GHz)
3
Diode inserted in series with a 50
Ω
stripline circuit and biased via the
analyzer Tee network. T
amb
= 25
°
C.
Diode zero biased and inserted in series with a 50
Ω
stripline circuit.
T
amb
= 25
°
C.
Fig.4
Insertion loss (|s
21
|
2
) of the diode as a
function of frequency; typical values.
Fig.5
Isolation (|s
21
|
2
) of the diode as a function of
frequency; typical values.
2002 Feb 19
4
Philips Semiconductors
Preliminary specification
General purpose PIN diode
PACKAGE OUTLINE
BAP51-04W
Plastic surface mounted package; 3 leads
SOT323
D
B
E
A
X
y
HE
v
M
A
3
Q
A
A1
c
1
e1
e
bp
2
w
M
B
Lp
detail X
0
1
scale
2 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
1.1
0.8
A1
max
0.1
bp
0.4
0.3
c
0.25
0.10
D
2.2
1.8
E
1.35
1.15
e
1.3
e1
0.65
HE
2.2
2.0
Lp
0.45
0.15
Q
0.23
0.13
v
0.2
w
0.2
OUTLINE
VERSION
SOT323
REFERENCES
IEC
JEDEC
EIAJ
SC-70
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
2002 Feb 19
5
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