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BLF882SU

Categorysemiconductor    Discrete semiconductor   
File Size931KB,12 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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Parameter NameAttribute value
Product CategoryRF MOSFET Transistors
ManufacturerNXP
RoHSDetails
TechnologySi
PackagingBulk
Factory Pack Quantity60
TypeRF Power MOSFET
BLF882; BLF882S
UHF power LDMOS transistor
Rev. 3 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
A 200 W LDMOS RF power transistor for broadcast transmitter applications and industrial
applications. The transistor can deliver 200 W in broadband applications from HF to
860 MHz. The excellent ruggedness and broadband performance of this device makes it
ideal for digital transmitter applications.
Table 1.
Test information
RF performance at T
case
= 25
C in a class-AB test circuit.
Test signal
f
(MHz)
CW, class-AB
CW pulsed, class-AB
DVB-T (8k OFDM)
[1]
V
DS
(V)
50
50
50
P
L(AV)
(W)
180
200
33
G
p
(dB)
21
21
20
D
(%)
62
63
28 to 31
PAR
(dB)
-
-
8.0 to 8.4
[1]
RF performance in a class-AB 705 MHz narrowband test circuit
705
705
470 to 705
RF performance in a class-AB 470 MHz to 705 MHz broadband test circuit
PAR of output signal at 0.01% probability on CCDF; PAR of input signal = 9.5 dB at 0.01% probability on
CCDF.
1.2 Features and benefits
Integrated ESD protection
Excellent ruggedness
High power gain
High efficiency
Excellent reliability
Easy power control
Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances
(RoHS)
1.3 Applications
Transmitter applications in the HF to 860 MHz frequency range
Industrial applications in the HF to 860 MHz frequency range
Broadcast transmitters
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