VS-4EWH02FN-M3
www.vishay.com
Vishay Semiconductors
Hyperfast Rectifier, 4 A FRED Pt
®
FEATURES
• Hyperfast recovery time
2, 4
• 175 °C max. operating junction temperature
• Output rectification freewheeling
• Low forward voltage drop reduced Q
rr
and soft
recovery
• Low leakage current
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
TO-252AA (D-PAK)
1
N/C
3
Anode
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
t
rr
(typ.)
T
J
max.
Diode variation
TO-252AA (D-PAK)
4A
200 V
0.71 V
23 ns
175 °C
Single die
DESCRIPTION / APPLICATIONS
State of the art hyperfast recovery rectifiers specifically
designed with optimized performance of forward voltage
drop and hyperfast recovery time.
The planar structure and the platinum doped life time
control guarantee the best overall performance, ruggedness
and reliability characteristics.
These devices are intended for use in the output rectification
stage of SMPS, UPS, DC/DC converters as well as
freewheeling diode in low voltage inverters and chopper
motor drives.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Peak repetitive reverse voltage
Average rectified forward current
Non-repetitive peak surge current
Peak repetitive forward current
Operating junction and storage temperatures
SYMBOL
V
RRM
I
F(AV)
I
FSM
I
FM
T
J
, T
Stg
T
C
= 164 °C
T
J
= 25 °C
T
C
= 164 °C, f = 20 kHz, d = 50 %
TEST CONDITIONS
VALUES
200
4
80
8
-65 to +175
°C
A
UNITS
V
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage,
blocking voltage
Forward voltage
SYMBOL
V
BR
,
V
R
V
F
I
R
C
T
L
S
I
R
= 100 μA
I
F
= 4 A
I
F
= 4 A, T
J
= 150 °C
V
R
= V
R
rated
T
J
= 150 °C, V
R
= V
R
rated
V
R
= 600 V
Measured lead to lead 5 mm from package body
TEST CONDITIONS
MIN.
200
-
-
-
-
-
-
TYP.
-
0.87
0.71
-
2
17
8
MAX.
-
0.95
0.80
3
20
-
-
μA
pF
nH
V
UNITS
Reverse leakage current
Junction capacitance
Series inductance
Revision: 04-Oct-16
Document Number: 93258
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-4EWH02FN-M3
www.vishay.com
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
I
F
= 1.0 A, dI
F
/dt = 100 A/μs, V
R
= 30 V
Reverse recovery time
t
rr
I
F
= 1.0 A, dI
F
/dt = 50 A/μs, V
R
= 30 V
T
J
= 25 °C
T
J
= 125 °C
Peak recovery current
I
RRM
Q
rr
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
I
F
= 4 A
dI
F
/dt = 200 A/μs
V
R
= 160 V
MIN.
-
-
-
-
-
-
-
-
TYP.
23
24
20
27
2
3.4
20
46
MAX.
27
-
-
-
-
-
-
-
A
ns
UNITS
Reverse recovery charge
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and
storage temperature range
Thermal resistance,
junction to case per leg
Approximate weight
Marking device
Case style TO-252AA (D-PAK)
SYMBOL
T
J
, T
Stg
R
thJC
TEST CONDITIONS
MIN.
-65
-
TYP.
-
2.7
0.3
0.01
4EWH02FN
MAX.
175
3.2
UNITS
°C
°C/W
g
oz.
Revision: 04-Oct-16
Document Number: 93258
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-4EWH02FN-M3
www.vishay.com
Vishay Semiconductors
100
T
J
= 175 °C
I
F
- Instantaneous Forward Current (A)
100
I
R
- Reverse Current (μA)
10
1
0.1
T
J
= 175 °C
10
T
J
= 150 °C
T
J
= 125 °C
T
J
= 100 °C
T
J
= 75 °C
1
T
J
= 25 °C
0.1
0.2
0.4
0.6
0.8
1.0
T
J
= 125 °C
0.01
0.001
0.0001
T
J
= 50 °C
T
J
= 25 °C
1.2
1.4
1.6
1.8
50
100
150
200
V
F
- Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
100
C
T
- Junction Capacitance (pF)
10
0
50
100
150
200
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Z
thJC
- Transient Thermal Impedance (°C/W)
10
D = 0.5
1
D = 02
D = 0.1
D = 0.05
D = 0.02
D = 0.01
Single
Pulse
(Thermal Resistance)
0.1
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
Revision: 04-Oct-16
Document Number: 93258
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
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VS-4EWH02FN-M3
www.vishay.com
180
175
170
165
160
155
150
0
1
2
3
4
5
6
Square
wave (D = 0.50)
rated V
R
applied
see
note
(1)
40
35
30
Vishay Semiconductors
Allowable Case Temperature (°C)
t
rr
(nC)
DC
4 A, T
J
= 125 °C
25
20
15
10
5
100
1000
4 A, T
J
= 25 °C
I
F(AV)
- Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
5
4.5
dI
F
dt (A/μs)
Fig. 7 - Typical Reverse Recovery Time vs. dI
F
/dt
Average Power Loss (W)
4
3.5
RMS Limit
50
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
DC
0
0
1
2
3
4
5
6
100
4 A, T
J
= 125 °C
2.5
2
1.5
1
0.5
0
Q
rr
(nC)
3
4 A, T
J
= 25 °C
1000
I
F(AV)
- Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
dI
F
dt (A/μs)
Fig. 8 - Typical Stored Charge vs. dI
F
/dt
(1)
Note
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= rated V
R
Revision: 04-Oct-16
Document Number: 93258
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-4EWH02FN-M3
www.vishay.com
Vishay Semiconductors
V
R
= 200 V
0.01
Ω
L = 70 μH
D.U.T.
dI
F
/dt
adjust
D
G
IRFP250
S
Fig. 9 - Reverse Recovery Parameter Test Circuit
(3)
I
F
0
t
rr
t
a
t
b
Q
rr
(2)
(4)
I
RRM
0.5 I
RRM
dI
(rec)M
/dt
(5)
0.75 I
RRM
(1)
dI
F
/dt
(1) dI
F
/dt - rate of change of current
through zero crossing
(2) I
RRM
- peak reverse recovery current
(3) t
rr
- reverse recovery time measured
from zero crossing point of negative
going I
F
to point where a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current.
(4)
Q
rr
- area under curve defined by t
rr
and I
RRM
Q
rr
=
t
rr
x I
RRM
2
(5) dI
(rec)M
/dt - peak rate of change of
current during t
b
portion of t
rr
Fig. 10 - Reverse Recovery Waveform and Definitions
Revision: 04-Oct-16
Document Number: 93258
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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