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BSS606NH6327XTSA1

CategoryDiscrete semiconductor    The transistor   
File Size392KB,9 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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BSS606NH6327XTSA1 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerInfineon
package instructionSMALL OUTLINE, R-PSSO-F3
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time10 weeks
Samacsys DescriptionMOSFET N-Ch 60V 3.2A SOT-89-3
Other featuresAVALANCHE RATED
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage60 V
Maximum drain current (ID)3.2 A
Maximum drain-source on-resistance0.06 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)15.3 pF
JESD-30 codeR-PSSO-F3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
GuidelineAEC-Q101
surface mountYES
Terminal surfaceTin (Sn)
Terminal formFLAT
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
BSS606N
OptiMOS -3 Small-Signal-Transistor
Features
• N-channel
• Enhancement mode
• Logic level (4.5V rated)
• Avalanche rated
• Qualified according to AEC Q101
• 100%lead-free; Halogen-free; RoHS compliant
Product Summary
V
DS
R
DS(on),max
V
GS
=10 V
V
GS
=4.5 V
I
D
60
60
90
3.2
A
V
mW
PG-SOT-89
4
1
2
3
Type
BSS606N
Package
PG-SOT-89
Tape and Reel Information
H6327: 3000 pcs/ reel
Marking
KE
Halogen-free
Yes
Package
Non-dry
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous drain current
Symbol Conditions
I
D
T
A
=25 °C
T
A
=70 °C
Pulsed drain current
Avalanche energy, single pulse
I
D,pulse
E
AS
T
A
=25 °C
I
D
=3.2 A,
R
GS
=25
W
Value
3.2
2.6
12.8
14
mJ
Unit
A
Reverse diode dv /dt
dv /dt
I
D
=3.2 A,
V
DS
=48 V,
di /dt =100 A/µs,
T
j,max
=150 °C
6
kV/µs
Gate source voltage
Power dissipation
1)
Operating and storage temperature
ESD Class
Soldering Temperature
IEC climatic category; DIN IEC 68-1
1)
V
GS
P
tot
T
j
,
T
stg
JESD22-A114 -HBM
T
A
=25 °C
±20
1.0
-55 ... 150
class 0 (< 250V)
260 °C
55/150/56
V
W
°C
Value refers to minimum footprint
Rev 2.2
page 1
2013-04-03
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