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BD675A

Description
Power Bipolar Transistor, 4A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin,
CategoryDiscrete semiconductor    The transistor   
File Size73KB,4 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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BD675A Overview

Power Bipolar Transistor, 4A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin,

BD675A Parametric

Parameter NameAttribute value
Objectid1404817132
Reach Compliance Codeunknown
ECCN codeEAR99
YTEOL0
Maximum collector current (IC)4 A
Collector-emitter maximum voltage45 V
ConfigurationDARLINGTON
Minimum DC current gain (hFE)750
JEDEC-95 codeTO-126
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeNPN
Maximum power consumption environment40 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Transistor component materialsSILICON
Nominal transition frequency (fT)2 MHz
VCEsat-Max2.8 V
BD675G, BD675AG,
BD677G, BD677AG,
BD679G, BD679AG, BD681G
Plastic Medium-Power
Silicon NPN Darlingtons
This series of plastic, medium−power silicon NPN Darlington
transistors can be used as output devices in complementary
general−purpose amplifier applications.
Features
http://onsemi.com
High DC Current Gain
Monolithic Construction
Complementary to BD676, 676A, 678, 678A, 680, 680A, 682
BD677, 677A, 679, 679A are Equivalent to MJE 800, 801, 802, 803
These Devices are Pb−Free and are RoHS Compliant*
4.0 AMPERES
POWER TRANSISTORS
NPN SILICON
60, 80, 100 VOLTS, 40 WATTS
COLLECTOR 2, 4
BASE 3
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
BD675G, BD675AG
BD677G, BD677AG
BD679G, BD679AG
BD681G
Collector−Base Voltage
BD675G, BD675AG
BD677G, BD677AG
BD679G, BD679AG
BD681G
Emitter−Base Voltage
Collector Current
Base Current
Total Device Dissipation
@ T
C
= 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
V
CEO
45
60
80
100
V
CBO
45
60
80
100
V
EBO
I
C
I
B
P
D
40
0.32
T
J
, T
stg
– 55 to + 150
W
W/°C
°C
BD6xx/BD6xxA = Device Code
x = 75, 77, 79, 81
Y
= Year
WW
= Work Week
G
= Pb−Free Package
5.0
4.0
1.0
Vdc
Adc
Adc
YWW
BD6xxG
YWW
BD6xxAG
Vdc
TO−225
CASE 77−09
STYLE 1
1 2
3
Value
Unit
Vdc
EMITTER 1
MARKING DIAGRAMS
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case
Symbol
R
qJC
Max
3.13
Unit
°C/W
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2013
1
December, 2013 − Rev. 15
Publication Order Number:
BD675/D

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Index Files: 2550  978  865  1283  663  52  20  18  26  14 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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