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DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D109
BSR30; BSR31; BSR33
PNP medium power transistors
Product data sheet
Supersedes data of 1999 Apr 26
2004 Dec 13
NXP Semiconductors
Product data sheet
PNP medium power transistors
FEATURES
•
High current (max. 1 A)
•
Low voltage (max. 80 V).
APPLICATIONS
•
Telephony and general industrial applications
•
Thick and thin-film circuits.
DESCRIPTION
PNP medium power transistor in a SOT89 plastic package.
NPN complements: BSR40; BSR41 and BSR43.
MARKING
TYPE NUMBER
BSR30
BSR31
BSR33
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME
BSR30
BSR31
BSR33
SC-62
DESCRIPTION
MARKING CODE
BR1
BR2
BR4
PINNING
PIN
1
2
3
BSR30; BSR31; BSR33
DESCRIPTION
emitter
collector
base
2
3
1
3
2
1
sym079
Fig.1 Simplified outline (SOT89) and symbol.
VERSION
SOT89
plastic surface mounted package; collector pad for good heat
transfer; 3 leads
2004 Dec 13
2
NXP Semiconductors
Product data sheet
PNP medium power transistors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
CBO
PARAMETER
collector-base voltage
BSR30; BSR31
BSR33
V
CEO
collector-emitter voltage
BSR30; BSR31
BSR33
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
Note
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
ambient temperature
T
amb
≤
25
°C;
note 1
open collector
open base
CONDITIONS
open emitter
BSR30; BSR31; BSR33
MIN.
−
−
−
−
−
−
−
−
−
−65
−
−65
MAX.
−70
−90
−60
−80
−5
−1
−2
−200
1.35
+150
150
+150
V
V
V
V
V
A
A
UNIT
mA
W
°C
°C
°C
1. Device mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm
2
.
For other mounting conditions, see
“Thermal considerations for SOT89 in the General Part of associated Handbook”.
THERMAL CHARACTERISTICS
SYMBOL
R
th(j-a)
R
th(j-s)
Note
1. Device mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm
2
.
For other mounting conditions, see
“Thermal considerations for SOT89 in the General Part of associated Handbook”.
PARAMETER
thermal resistance from junction to ambient
thermal resistance from junction to soldering point
CONDITIONS
note 1
VALUE
93
13
UNIT
K/W
K/W
2004 Dec 13
3
NXP Semiconductors
Product data sheet
PNP medium power transistors
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
PARAMETER
collector-base cut-off current
emitter-base cut-off current
DC current gain
BSR30
BSR31; BSR33
DC current gain
BSR30
BSR31; BSR33
DC current gain
BSR30
BSR31; BSR33
V
CEsat
V
BEsat
f
T
Note
1. Pulse test: t
p
= 300
μs; δ
< 0.01.
collector-emitter saturation
voltage
base-emitter saturation voltage
transition frequency
CONDITIONS
I
E
= 0 A; V
CB
=
−60
V
BSR30; BSR31; BSR33
MIN.
−
−
−
10
30
MAX.
−100
−50
−100
−
−
120
300
−
−
−0.25
−0.5
−1
−1.2
−
V
V
V
V
UNIT
nA
μA
nA
I
E
= 0 A; V
CB
=
−60
V; T
j
= 150
°C
I
C
= 0 A; V
EB
=
−5
V
I
C
=
−100 μA;
V
CE
=
−5
V; note 1
I
C
=
−100
mA; V
CE
=
−5
V; note 1
40
100
I
C
=
−500
mA; V
CE
=
−5
V; note 1
30
50
I
C
=
−150
mA; I
B
=
−15
mA; note 1
I
C
=
−500
mA; I
B
=
−50
mA; note 1
I
C
=
−150
mA; I
B
=
−15
mA; note 1
I
C
=
−500
mA; I
B
=
−50
mA; note 1
I
C
=
−50
mA; V
CE
=
−10
V;
f = 100 MHz
−
−
−
−
100
MHz
2004 Dec 13
4
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