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BLA0912-250112

Description
RF MOSFET Transistors LDMOS TNS
Categorysemiconductor    Discrete semiconductor   
File Size946KB,13 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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RF MOSFET Transistors LDMOS TNS

BLA0912-250112 Parametric

Parameter NameAttribute value
Product CategoryRF MOSFET Transistors
ManufacturerNXP
RoHSDetails
Transistor PolarityN-Channel
Id - Continuous Drain Current300 mA
Vds - Drain-Source Breakdown Voltage75 V
Rds On - Drain-Source Resistance60 mOhms
TechnologySi
Gain13 dB
Output Power250 W
Maximum Operating Temperature+ 150 C
Mounting StyleSMD/SMT
Package / CaseSOT-502A
PackagingTube
Channel ModeEnhancement
ConfigurationSingle
Minimum Operating Temperature- 65 C
Operating Frequency0.96 GHz to 1.215 GHz
Pd - Power Dissipation700 W
Factory Pack Quantity60
TypeRF Power MOSFET
Vgs - Gate-Source Voltage+/- 22 V
Vgs th - Gate-Source Threshold Voltage5 V
BLA0912-250
Avionics LDMOS transistor
Rev. 4 — 1 September
Product data sheet
1. Product profile
1.1 General description
Silicon N-channel enhancement mode LDMOS transistor encapsulated in a 2-lead
SOT502A flange package with a ceramic cap. The common source is connected to the
mounting flange.
Table 1.
Test information
Typical RF performance measured in common source class-AB test circuit at P
L
= 250 W and 960 MHz to 1215 MHz
frequency band. T
h
= 25
C; Z
th(j-h)
= 0.15 K/W; unless otherwise specified.
Mode of operation
all modes
TCAS
Mode-S
JTIDS
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
f
(MHz)
960 to 1215
1030 to 1090
1030 to 1090
1030 to 1090
960 to 1215
t
p
(s)
100
32
128
340
%
10
2
1
V
DS
P
L
(V)
36
36
36
36
G
p
G
p
D
50
50
50
50
45
P
droop(pulse)
0.1
0
0.1
0.2
0.2
t
r
25
25
25
25
25
t
f
6
6
6
6
6
Z
th(j-h)
ins(rel)
(deg)
5
5
5
5
5
0.18
0.07
0.15
0.20
0.45
(W) (dB) (dB) (%) (dB)
250 13.5 0.8
250 14.0 0.8
250 13.5 0.8
250 13.5 0.8
200 13.0 1.2
(ns) (ns) (K/W)
0.1 36
3300 22
1.2 Features and benefits
High power gain
Easy power control
Excellent ruggedness
Source on mounting base eliminates DC isolators, reducing common mode
inductance.
1.3 Applications
Avionics transmitter applications in the 960 MHz to 1215 MHz frequency range such
as Mode-S, TCAS and JTIDS, DME or TACAN.

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Index Files: 437  1104  2294  2658  2457  9  23  47  54  50 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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