BSD235C
OptiMOS™ 2 + OptiMOS™-P 2 Small Signal Transistor
Features
·
Complementary P + N channel
·
Enhancement mode
·
Super Logic level (2.5V rated)
·
Avalanche rated
·
Qualified according to AEC Q101
·
100% lead-free; RoHS compliant
·
Halogen-free according to IEC61249-2-21
I
D
V
DS
R
DS(on),max
V
GS
=±4.5 V
V
GS
=±2.5 V
Product Summary
P
-20
1200
2100
-0.53
N
20
350
600
0.95
A
V
mW
PG-SOT-363
6
5
4
1
2
3
Type
BSD235C
Package
PG-SOT-363
Tape and Reel Information
H6327: 3000 pcs / reel
Marking
X9s
Lead Free
Yes
Packing
Non dry
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
1)
Parameter
Symbol Conditions
P
Continuous drain current
I
D
T
A
=25 °C
T
A
=70 °C
Pulsed drain current
Avalanche energy, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
ESD class
Soldering temperature
IEC climatic category; DIN IEC 68-1
1)
Value
N
0.95
0.76
3.8
1.6
±12
Unit
-0.53
-0.46
-2.1
1.4
A
I
D,pulse
E
AS
V
GS
P
tot
T
j
,
T
stg
T
A
=25 °C
P:
I
D
=-0.53 A,
N:
I
D
=0.95 A,
R
GS
=25
W
mJ
V
W
°C
°C
°C
T
A
=25 °C
0.5
-55 ... 150
JESD22-A114-HBM
T
solder
0 (<250V)
260
55/150/56
Remark: only one of both transistors active
Rev.2.4
page 1
2015-10-08
BSD235C
Parameter
Symbol Conditions
min.
Thermal characteristics
Thermal resistance, junction -
ambient
P
N
R
thJA
minimal footprint
2)
-
-
250
K/W
Values
typ.
max.
Unit
Electrical characteristics,
at
T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
P
V
(BR)DSS
V
GS
=0 V,
I
D
=-250 µA
N
V
GS
=0 V,
I
D
=250 µA
V
DS
=V
GS
,
I
D
=-1.5 µA
V
DS
=V
GS
,
I
D
=1.6 µA
V
DS
=-20 V,
V
GS
=0 V,
T
j
=25 °C
V
DS
=20 V,
V
GS
=0 V,
T
j
=25 °C
V
DS
=-20 V,
V
GS
=0 V,
T
j
=150 °C
V
DS
=20 V,
V
GS
=0 V,
T
j
=150 °C
I
GSS
V
GS
=±12 V,
V
DS
=0 V
V
GS
=-2.5 V,
I
D
=-0.17 A
V
GS
=2.5 V,
I
D
=0.29 A
V
GS
=-4.5V,
I
D
=-
0.53 A
V
GS
=4.5 V,
I
D
=0.95 A
|V
DS
|>2|I
D
|R
DS(on)max
,
I
D
=-0.46 A
|V
DS
|>2|I
D
|R
DS(on)max
,
I
D
=0.76 A
-
20
-1.2
0.7
-
-
-
-0.9
0.95
-
-20
-
-0.6
1.2
-1
V
Gate threshold voltage
P
V
GS(th)
N
Zero gate voltage drain current
P
I
DSS
µA
N
-
-
1
P
N
Gate-source leakage current
P
N
P
R
DS(on)
N
P
N
Transconductance
P
g
fs
-
-
-
-
-
-
-100
100
±100
nA
Drain-source on-state
resistance
-
-
-
-
-
1221
415
745
266
0.7
2100
600
1200
350
-
mW
S
N
2)
-
2
-
Performed on 40mm
2
FR4 PCB. The traces are 1mm wide, 70μm thick and 20mm long; they are present on both
sides of the PCB
Rev.2.4
page 2
2015-10-08
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