RF MOSFET Transistors RF Transistor
| Parameter Name | Attribute value |
| Product Category | RF MOSFET Transistors |
| Manufacturer | ASI [ASI Semiconductor, Inc] |
| RoHS | Details |
| Transistor Polarity | N-Channel |
| Id - Continuous Drain Current | 18 A |
| Vds - Drain-Source Breakdown Voltage | 125 V |
| Rds On - Drain-Source Resistance | 300 mOhms |
| Technology | Si |
| Maximum Operating Temperature | + 200 C |
| Mounting Style | SMD/SMT |
| Package / Case | SOT-262A |
| Packaging | Tray |
| Configuration | Single |
| Minimum Operating Temperature | - 65 C |
| Operating Frequency | 225 MHz |
| Pd - Power Dissipation | 500 W |
| Vgs - Gate-Source Voltage | 20 V |
| Vgs th - Gate-Source Threshold Voltage | 7 V |