MBRF20030R datasheet, PDF - EEWORLD Datasheet

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MBRF20030R: DescriptionSchottky Diodes u0026 Rectifiers Schottky Rectifier - 30 V - 200 A - TO-244AB; CategoryDiscrete semiconductor diode; File Size458KB，3 Pages; ManufacturerGeneSiC; Websitehttp://www.genesicsemi.com/

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MBRF20030R Overview

Schottky Diodes u0026 Rectifiers Schottky Rectifier - 30 V - 200 A - TO-244AB

MBRF20030R Parametric

Parameter Name	Attribute value
Maker	GeneSiC
Reach Compliance Code	compliant
application	POWER
Shell connection	ANODE
Configuration	COMMON ANODE, 2 ELEMENTS
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	0.7 V
JEDEC-95 code	TO-244AB
JESD-30 code	R-PUFM-X2
Maximum non-repetitive peak forward current	1500 A
Number of components	2
Phase	1
Number of terminals	2
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Maximum output current	100 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Maximum repetitive peak reverse voltage	30 V
Maximum reverse current	1000 µA
surface mount	NO
technology	SCHOTTKY
Terminal form	UNSPECIFIED
Terminal location	UPPER

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MBRF20020 thru MBRF20040R

Silicon Power

Schottky Diode

Features

• High Surge Capability

• Types from 20 to 40 V V

RRM

• Not ESD Sensitive

TO-244AB Package

V

RRM

= 20 V - 40 V

I

F(AV)

= 200 A

Maximum ratings, at T

j

= 25 °C, unless otherwise specified ("R" devices have leads reversed)

Parameter

Repetitive peak reverse

voltage

RMS reverse voltage

DC blocking voltage

Operating temperature

Storage temperature

Symbol

V

RRM

V

RMS

V

DC

T

j

T

stg

Conditions

MBRF20020(R) MBRF20030(R) MBRF20035(R) MBRF20040(R)

20

14

20

-55 to 150

30

21

30

-55 to 150

35

25

35

-55 to 150

40

28

40

-55 to 150

Unit

V

°C

Electrical characteristics, at Tj = 25 °C, unless otherwise specified

Parameter

Average forward current

(per pkg)

Peak forward surge current

(per leg)

Maximum forward voltage

(per leg)

Reverse current at rated DC

blocking voltage (per leg)

Symbol

I

F(AV)

I

FSM

V

F

I

R

Conditions

T

C

= 125 °C

t

p

= 8.3 ms, half sine

I

FM

= 100 A, T

j

= 25 °C

T

j

= 25 °C

T

j

= 100 °C

T

j

= 150 °C

MBRF20020(R) MBRF20030(R) MBRF20035(R) MBRF20040(R)

200

1500

0.70

1

10

30

200

1500

0.70

1

10

30

200

1500

0.70

1

10

30

200

1500

0.70

1

10

30

Unit

A

V

mA

Thermal characteristics

Thermal resistance, junction-

case (per leg)

R

ΘJC

0.45

°C/W

www.genesicsemi.com/silicon-products/schottky-rectifiers/

1

MBRF20030R Related Products

	MBRF20030R	MBRF20035	MBRF20040	MBRF20030	MBRF20020R	MBRF20035R
Description	Schottky Diodes u0026 Rectifiers Schottky Rectifier - 30 V - 200 A - TO-244AB	Schottky Diodes u0026 Rectifiers Schottky Rectifier - 35 V - 200 A - TO-244AB	Schottky Diodes u0026 Rectifiers Schottky Rectifier - 40 V - 200 A - TO-244AB	Schottky Diodes u0026 Rectifiers Schottky Rectifier - 30 V - 200 A - TO-244AB	Schottky Diodes u0026 Rectifiers Schottky Rectifier - 20 V - 200 A - TO-244AB	DIODE SCHOTTKY 35V 100A TO244AB
Maker	GeneSiC	GeneSiC	GeneSiC	GeneSiC	GeneSiC	GeneSiC
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compliant
application	POWER	POWER	POWER	POWER	POWER	POWER
Shell connection	ANODE	CATHODE	CATHODE	CATHODE	ANODE	ANODE
Configuration	COMMON ANODE, 2 ELEMENTS	COMMON CATHODE, 2 ELEMENTS	COMMON CATHODE, 2 ELEMENTS	COMMON CATHODE, 2 ELEMENTS	COMMON ANODE, 2 ELEMENTS	COMMON ANODE, 2 ELEMENTS
Diode component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Diode type	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
Maximum forward voltage (VF)	0.7 V	0.7 V	0.7 V	0.7 V	0.7 V	0.7 V
JEDEC-95 code	TO-244AB	TO-244AB	TO-244AB	TO-244AB	TO-244AB	TO-244AB
JESD-30 code	R-PUFM-X2	R-PUFM-X2	R-PUFM-X2	R-PUFM-X2	R-PUFM-X2	R-PUFM-X2
Maximum non-repetitive peak forward current	1500 A	1500 A	1500 A	1500 A	1500 A	1500 A
Number of components	2	2	2	2	2	2
Phase	1	1	1	1	1	1
Number of terminals	2	2	2	2	2	2
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Minimum operating temperature	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C
Maximum output current	100 A	100 A	100 A	100 A	100 A	100 A
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Maximum repetitive peak reverse voltage	30 V	35 V	40 V	30 V	20 V	35 V
Maximum reverse current	1000 µA	1000 µA	1000 µA	1000 µA	1000 µA	1000 µA
surface mount	NO	NO	NO	NO	NO	NO
technology	SCHOTTKY	SCHOTTKY	SCHOTTKY	SCHOTTKY	SCHOTTKY	SCHOTTKY
Terminal form	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
Terminal location	UPPER	UPPER	UPPER	UPPER	UPPER	UPPER

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