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BSS314PE-H6327

Categorysemiconductor    Discrete semiconductor   
File Size486KB,9 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
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BSS314PE-H6327 Parametric

Parameter NameAttribute value
Product CategoryMOSFET
ManufacturerInfineon
RoHSDetails
TechnologySi
Mounting StyleSMD/SMT
Package / CaseSOT-23-3
Number of Channels1 Channel
Transistor PolarityP-Channel
Vds - Drain-Source Breakdown Voltage- 30 V
Id - Continuous Drain Current- 1.5 A
Rds On - Drain-Source Resistance107 mOhms
Vgs - Gate-Source Voltage+/- 20 V
Vgs th - Gate-Source Threshold Voltage- 2 V
Qg - Gate Charge- 2.9 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
PackagingReel
Channel ModeEnhancement
Configuration1 P-Channel
Fall Time2.8 ns
Forward Transconductance - Min3 S
Height1.1 mm
Length2.9 mm
Pd - Power Dissipation500 mW (1/2 W)
Rise Time3.9 ns
Factory Pack Quantity9000
Transistor Type1 P-Channel
Typical Turn-Off Delay Time12.4 ns
Typical Turn-On Delay Time5.1 ns
Width1.3 mm
BSS314PE
OptiMOS™-P 3 Small-Signal-Transistor
Features
• P-channel
• Enhancement mode
• Logic level (4.5V rated)
• ESD protected
• Qualified according AEC Q101
• 100% Lead-free; RoHS compliant
• Halogen-free according to IEC61249-2-21
Product Summary
V
DS
R
DS(on),max
V
GS
=-10 V
V
GS
=-4.5 V
I
D
30
140
230
-1.5
PG-SOT-23
3
V
mW
A
1
1
2
2
3
Type
BSS314PE
Package
PG-SOT23
Tape and Reel Information
H6327: 3000 pcs/ reel
Marking
YGs
Lead Free
Yes
Packing
Non dry
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous drain current
Symbol Conditions
I
D
T
A
=25 °C
T
A
=70 °C
Pulsed drain current
Avalanche energy, single pulse
I
D,pulse
E
AS
T
A
=25 °C
I
D
=-1.5 A,
R
GS
=25
W
I
D
=-1.5 A,
V
DS
=-16 V,
di /dt =-200A/µs,
T
j,max
=150 °C
Value
-1.5
-1.2
-6.1
6
mJ
Unit
A
Reverse diode dv /dt
dv /dt
6
kV/µs
Gate source voltage
Power dissipation
1)
Operating and storage temperature
ESD Class
Soldering Temperature
IEC climatic category; DIN IEC 68-1
V
GS
P
tot
T
j
,
T
stg
JESD22-A114 -HBM
T
A
=25 °C
±20
0.5
-55 ... 150
1000V to 2000V
260 °C
55/150/56
V
W
°C
°C
°C
Rev 2.3
page 1
2012-10-19
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