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BLF7G27LS-140112

Categorysemiconductor    Discrete semiconductor   
File Size1MB,14 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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BLF7G27LS-140112 Parametric

Parameter NameAttribute value
Product CategoryRF MOSFET Transistors
ManufacturerNXP
RoHSDetails
Transistor PolarityN-Channel
Id - Continuous Drain Current28 A
Vds - Drain-Source Breakdown Voltage65 V
Rds On - Drain-Source Resistance70 mOhms
TechnologySi
Gain16.5 dB
Output Power50 W
Maximum Operating Temperature+ 150 C
Mounting StyleSMD/SMT
Package / CaseSOT-502B-3
PackagingTube
ConfigurationSingle
Operating Frequency2.5 GHz to 2.7 GHz
Factory Pack Quantity60
TypeRF Power MOSFET
Vgs - Gate-Source Voltage13 V
Vgs th - Gate-Source Threshold Voltage1.8 V
BLF7G27L-140;
BLF7G27LS-140
Power LDMOS transistor
Rev. 4 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
140 W LDMOS power transistor for base station applications at frequencies from
2500 MHz to 2700 MHz.
Table 1.
Typical performance
Typical RF performance at T
case
= 25
C in a common source class-AB production test circuit.
Mode of operation
IS-95
f
(MHz)
2500 to 2700
Single carrier W-CDMA 2500 to 2700
[1]
[2]
I
Dq
(mA)
1300
1300
V
DS
(V)
28
28
P
L(AV)
(W)
30
50
G
p
(dB)
16.5
16.5
D
22
27
ACPR
885k
ACPR
5M
(dBc)
-
38
[2]
48
[1]
-
(%) (dBc)
Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 dB at
0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz.
3GPP; test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF. Channel bandwidth is
3.84 MHz.
1.2 Features and benefits
Excellent ruggedness
High efficiency
Low R
th
providing excellent thermal stability
Designed for low memory effects providing excellent digital pre-distortion capability
Internally matched for ease of use
Integrated ESD protection
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
RF power amplifiers for W-CDMA base stations and multi carrier applications in the
2500 MHz to 2700 MHz frequency range

BLF7G27LS-140112 Related Products

BLF7G27LS-140112 BLF7G27LS-140118 BLF7G27L-140118
Description RF MOSFET Transistors PWR LDMOS TRANSISTOR RF MOSFET Transistors PWR LDMOS TRANSISTOR
Product Category RF MOSFET Transistors RF MOSFET Transistors RF MOSFET Transistors
Manufacturer NXP NXP NXP
RoHS Details Details Details
Transistor Polarity N-Channel N-Channel N-Channel
Id - Continuous Drain Current 28 A 28 A 28 A
Vds - Drain-Source Breakdown Voltage 65 V 65 V 65 V
Rds On - Drain-Source Resistance 70 mOhms 70 mOhms 70 mOhms
Technology Si Si Si
Gain 16.5 dB 16.5 dB 16.5 dB
Output Power 50 W 50 W 50 W
Maximum Operating Temperature + 150 C + 150 C + 150 C
Mounting Style SMD/SMT SMD/SMT SMD/SMT
Package / Case SOT-502B-3 SOT-502B-3 SOT-502A-3
Configuration Single Single Single
Operating Frequency 2.5 GHz to 2.7 GHz 2.5 GHz to 2.7 GHz 2.5 GHz to 2.7 GHz
Factory Pack Quantity 60 100 100
Type RF Power MOSFET RF Power MOSFET RF Power MOSFET
Vgs - Gate-Source Voltage 13 V 13 V 13 V
Vgs th - Gate-Source Threshold Voltage 1.8 V 1.8 V 1.8 V
Packaging Tube Reel Reel
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