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1N5299

Description
Current Regulator Diodes 1.2mA Curr Reg
CategoryDiscrete semiconductor    diode   
File Size411KB,3 Pages
ManufacturerCentral Semiconductor
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1N5299 Overview

Current Regulator Diodes 1.2mA Curr Reg

1N5299 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerCentral Semiconductor
Parts packaging codeDO-35
package instructionO-LALF-W2
Contacts2
Reach Compliance Codenot_compliant
ECCN codeEAR99
Is SamacsysN
Other featuresHIGH RELIABILITY
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeCURRENT REGULATOR DIODE
Minimum dynamic impedance640000 Ω
JEDEC-95 codeDO-35
JESD-30 codeO-LALF-W2
JESD-609 codee0
Maximum limit voltage1.45 V
Number of components1
Number of terminals2
Maximum operating temperature200 °C
Minimum operating temperature-65 °C
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum power dissipation0.6 W
Certification statusNot Qualified
Nominal regulation current (Ireg)1.2 mA
Maximum repetitive peak reverse voltage100 V
surface mountNO
technologyFIELD EFFECT
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
1N5283 THRU 1N5314
SILICON CURRENT LIMITING DIODES
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 1N5283 series
types are silicon field effect current regulator diodes
designed for applications requiring a constant
current over a wide voltage range. These devices
are manufactured in the cost effective DO-35 double
plug case which provides many benefits to the
user, including space savings and improved thermal
characteristics. Special selections of IP (regulator
current) are available for critical applications.
DO-35 CASE
FEATURES:
• High Reliability
• Special Selections Available
• Superior Lot To Lot Consistency
• Surface Mount Devices Available
SYMBOL
POV
PD
TJ, Tstg
UNITS
V
mW
°C
MAXIMUM RATINGS:
(TL=75°C)
Peak Operating Voltage
Power Dissipation
Operating and Storage Junction Temperature
ELECTRICAL CHARACTERISTICS:
(TA=25°C)
Regulator
Current
(Note 1)
Type
IP @ VT=25V
MIN
NOM
MAX
mA
mA
mA
0.187
0.204
0.230
0.255
0.281
0.332
0.366
0.400
0.476
0.527
0.578
0.638
0.697
0.774
0.850
0.935
0.22
0.24
0.27
0.30
0.33
0.39
0.43
0.47
0.56
0.62
0.68
0.75
0.82
0.91
1.00
1.10
0.253
0.276
0.311
0.345
0.380
0.449
0.495
0.541
0.644
0.713
0.782
0.863
0.943
1.05
1.15
1.27
100
600
-65 to +200
Minimum
Dynamic
Impedance
ZT @ VT=25V
25
19
14
9.0
6.6
4.1
3.3
2.7
1.90
1.55
1.35
1.15
1.00
0.88
0.80
0.70
Minimum
Knee
Impedance
ZK @ VK=6.0V
2.75
2.35
1.95
1.60
1.35
1.00
0.87
0.75
0.56
0.47
0.40
0.335
0.29
0.24
0.205
0.18
Maximum
Limiting
Voltage
VL @ IL=0.8 x IP MIN
V
1.0
1.0
1.0
1.0
1.0
1.05
1.05
1.05
1.10
1.13
1.15
1.20
1.25
1.29
1.35
1.40
1N5283
1N5284
1N5285
1N5286
1N5287
1N5288
1N5289
1N5290
1N5291
1N5292
1N5293
1N5294
1N5295
1N5296
1N5297
1N5298
Notes: (1) Pulsed Method: Pulse Width (ms) = 27.5 divided by IP NOM (mA)
R4 (7-February 2013)

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