STTH60W02C
Turbo 2 ultrafast high voltage rectifier
Datasheet
production data
Features
■
■
■
■
■
■
Ultrafast switching
Low reverse recovery current
Low thermal resistance
Reduces switching losses
ECOPACK
®
2 compliant component
Ribbon bonding for more robustness
A1
K
A2
Description
The STTH60W02CW uses ST Turbo 2, 200 V
technology. It is especially suited for use in
DC/DC and DC/AC converters in secondary stage
of MIG/MMA/TIG welding machine. Housed in
ST's TO-247, this device offers high power
integration for all welding machines and industrial
applications.
A1
A2
K
TO-247
STTH60W02CW
Table 1.
Device summary
Symbol
I
F(AV)
V
RRM
t
rr
(typ)
T
j
(max)
V
F
(typ)
Value
2 x 30 A
200 V
24 ns
175 °C
0.85 V
October 2012
This is information on a product in full production.
Doc ID 023073 Rev 1
1/8
www.st.com
8
Characteristics
STTH60W02C
1
Characteristics
Table 2.
Symbol
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
T
stg
T
j
Absolute ratings (limiting values, at 25 °C, unless otherwise specified,
per diode)
Parameter
Repetitive peak reverse voltage
Forward rms current
Average forward current,
= 0.5
Surge non repetitive forward current
Storage temperature range
Maximum operating junction temperature
T
c
= 125 °C
T
c
= 115°C
Per diode
Per device
Value
200
45
30
60
250
-65 to + 175
+ 175
Unit
V
A
A
A
°C
°C
t
p
= 10 ms sinusoidal
Table 3.
Symbol
R
th(j-c)
R
th(c)
Thermal resistance
Parameter
Per diode
Junction to case
Total
Value
1.3
Unit
°C / W
0.8
0.3
°C / W
Coupling
When diodes 1 and 2 are used simultaneously:
T
j
(diode 1) = P(diode 1) x R
th(j-c)
(per diode) + P(diode 2) x R
th(c)
Table 4.
Symbol
I
R (1)
Static electrical characteristics (per diode)
Parameter
Reverse leakage current
Test conditions
T
j
= 25 °C
T
j
= 125 °C
T
j
= 25 °C
V
R
= V
RRM
Min.
Typ
Max.
10
Unit
µA
10
100
1.15
V
F (2)
Forward voltage drop
T
j
= 150 °C
T
j
= 25 °C
T
j
= 150 °C
I
F
= 30A
0.85
1.0
V
1.35
I
F
= 60 A
1.05
1.25
1. Pulse test: t
p
= 5 ms,
< 2%
2. Pulse test: t
p
= 380 µs,
< 2%
To evaluate the conduction losses use the following equation:
P = 0.75 x I
F(AV)
+ 0.0083 I
F
2
(RMS)
2/8
Doc ID 023073 Rev 1
STTH60W02C
Table 5.
Symbol
I
RM
Q
RR
S
factor
t
rr
t
fr
V
FP
Characteristics
Dynamic electrical characteristics (per diode)
Parameter
Reverse recovery current
Reverse recovery charge
Softness factor
Reverse recovery time
Forward recovery time
Forward recovery voltage
T
j
= 25 °C
T
j
= 25 °C
T
j
= 25 °C
I
F
= 1 A, V
R
= 30 V
dI
F
/dt = -100 A/µs
I
F
= 30 A, V
FR
= 1.1 V
dI
F
/dt = 200 A/µs
T
j
= 125 °C
I
F
= 30 A, V
R
= 160 V
dI
F
/dt = -200 A/µs
Test conditions
Min.
Typ
8
220
0.3
24
30
300
2
3
ns
ns
V
Max.
10.5
Unit
A
nC
Figure 1.
Average forward power dissipation Figure 2.
versus average forward current
(per diode)
I
FM
(A)
1000.0
δ
= 0.5
δ
= 0.2
δ
= 0.
1
δ
= 0.05
δ
=1
Forward voltage drop versus
forward current (per diode)
P
F(AV)
(W)
45
40
35
30
25
20
15
10
5
0
0
5
10
T
100.0
T
j
=150 °C
(Maximum values)
T
j
=150 °C
(Typical values)
10.0
T
j
=25 °C
(Maximum values)
1.0
I
F(AV)
(A)
δ
= tp/T
15
V
FM
(V)
0.1
tp
20
25
30
35
40
0.0
0.5
1.0
1.5
2.0
2.5
Figure 3.
Relative variation of thermal
Figure 4.
impedance junction to case versus
pulse duration
IRM(A)
18
16
14
12
10
I
F
=I
F(AV)
V
R
=160 V
T
j
=125 °C
Peak reverse recovery current
versus dI
F
/dt (typical values, per
diode)
Zth(j-c)/Rth(j-c)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1.E-04
Single pulse
8
6
4
tp(s)
1.E-03
1.E-02
1.E-01
1.E+00
2
0
0
50
100
150
200
250
300
350
dIF/dt(A/µs)
400
450
500
Doc ID 023073 Rev 1
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Characteristics
STTH60W02C
Figure 5.
trr(ns)
80
70
60
50
40
30
20
10
Reverse recovery time versus dI
F
/dt Figure 6.
(typical values, per diode)
Q
RR
(nC)
Reverse recovery charges versus
dI
F
/dt (typical values, per diode)
500
I
F
=I
F(AV)
V
R
=160 V
T
j
=125 °C
400
I
F
=I
F(AV)
V
R
=160 V
T
j
=125 °C
300
200
100
dIF/dt(A/µs)
0
0
50
100
150
200
250
300
350
400
450
500
0
0
50
100
150
200
250
300
350
dIF/dt(A/µs)
400
450
500
Figure 7.
Reverse recovery softness factor
versus dI
F
/dt (typical values, per
diode)
Figure 8.
Relative variation of dynamic
parameters versus junction
temperature
I
F
=I
F(AV)
V
R
=160 V
Reference: T
j
=125 °C
S factor
0.8
0.7
0.6
0.5
0.4
I
F
=I
F(AV)
V
R
=160 V
T
j
=125 °C
2.5
S
FACTOR
2.0
1.5
1.0
0.3
I
RM
0.2
0.1
0.0
0
50
100
150
200
250
300
350
400
450
500
0.5
dIF/dt(A/µs)
0.0
25
Q
RR
Tj(°C)
50
75
100
125
Figure 9.
Transient peak forward voltage
versus dI
F
/dt (typical values, per
diode)
Figure 10. Forward recovery time versus dI
F
/dt
(typical values, per diode)
tfr(ns)
160
140
120
100
I
F
=I
F(AV)
V
FR
=1.1 V
T
j
=125 °C
VFP(V)
4
I
F
=I
F(AV)
T
j
=125 °C
3
2
80
60
1
40
dIF/dt(A/µs)
0
150
200
250
300
350
400
450
500
20
0
150
dIF/dt(A/µs)
200
250
300
350
400
450
500
4/8
Doc ID 023073 Rev 1
STTH60W02C
Characteristics
Figure 11. Junction capacitance versus reverse voltage applied (typical values, per
diode)
C(pF)
1000
F=1 MHz
V
OSC
=30 mV
RMS
T
j
=25 °C
100
V
R
(V)
10
1
10
100
1000
Doc ID 023073 Rev 1
5/8
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