DATA SHEET
1GB DDR2 SDRAM SO-DIMM
EBE11UD8AGSA (128M words
×
64 bits, 2 Ranks)
Description
The EBE11UD8AGSA is 128M words
×
64 bits, 2 ranks
DDR2 SDRAM Small Outline Dual In-line Memory
Module, mounting 16 pieces of 512M bits DDR2
SDRAM sealed in FBGA (µBGA
) package. Read and
write operations are performed at the cross points of
the CK and the /CK. This high-speed data transfer is
realized by the 4 bits prefetch-pipelined architecture.
Data strobe (DQS and /DQS) both for read and write
are available for high speed and reliable data bus
design. By setting extended mode register, the on-chip
Delay Locked Loop (DLL) can be set enable or disable.
This module provides high density mounting without
utilizing surface mount technology.
Decoupling
capacitors are mounted beside each FBGA (µBGA) on
the module board.
Note: Do not push the components or drop the
modules in order to avoid mechanical defects,
which may result in electrical defects.
Features
•
200-pin socket type small outline dual in line memory
module (SO-DIMM)
PCB height: 30.0mm
Lead pitch: 0.6mm
Lead-free (RoHS compliant)
•
Power supply: VDD
=
1.8V
±
0.1V
•
Data rate: 667Mbps/533Mbps (max.)
•
SSTL_18 compatible I/O
•
Double-data-rate architecture: two data transfers per
clock cycle
•
Bi-directional, differential data strobe (DQS and
/DQS) is transmitted/received with data, to be used in
capturing data at the receiver
•
DQS is edge aligned with data for READs: center-
aligned with data for WRITEs
•
Differential clock inputs (CK and /CK)
•
DLL aligns DQ and DQS transitions with CK
transitions
•
Commands entered on each positive CK edge: data
and data mask referenced to both edges of DQS
•
Four internal banks for concurrent operation
(components)
•
Data mask (DM) for write data
•
Burst lengths: 4, 8
•
/CAS Latency (CL): 3, 4, 5
•
Auto precharge operation for each burst access
•
Auto refresh and self refresh modes
•
Average refresh period
7.8µs at 0°C
≤
TC
≤ +85°C
3.9µs at
+85°C <
TC
≤ +95°C
•
Posted CAS by programmable additive latency for
better command and data bus efficiency
•
Off-Chip-Driver Impedance Adjustment and On-Die-
Termination for better signal quality
•
/DQS can be disabled for single-ended Data Strobe
operation
Document No. E0827E10 (Ver. 1.0)
Date Published October 2005 (K) Japan
Printed in Japan
URL: http://www.elpida.com
Elpida
Memory, Inc. 2005
EBE11UD8AGSA
Pin Description
Pin name
A0 to A13
A10 (AP)
BA0, BA1
DQ0 to DQ63
/RAS
/CAS
/WE
/CS0, /CS1
CKE0, CKE1
CK0, CK1
/CK0, /CK1
DQS0 to DQS7, /DQS0 to /DQS7
DM0 to DM7
SCL
SDA
SA0, SA1
VDD
VDDSPD
VREF
VSS
ODT0, ODT1
NC
Function
Address input
Row address
Column address
Auto precharge
Bank select address
Data input/output
Row address strobe command
Column address strobe command
Write enable
Chip select
Clock enable
Clock input
Differential clock input
Input and output data strobe
Input mask
Clock input for serial PD
Data input/output for serial PD
Serial address input
Power for internal circuit
Power for serial EEPROM
Input reference voltage
Ground
ODT control
No connection
A0 to A13
A0 to A9
Data Sheet E0827E10 (Ver. 1.0)
4
EBE11UD8AGSA
Serial PD Matrix
Byte No.
0
1
2
3
4
5
6
7
8
9
Function described
Number of bytes utilized by module
manufacturer
Total number of bytes in serial PD
device
Memory type
Number of row address
Number of column address
Number of DIMM ranks
Module data width
Module data width continuation
Bit7
1
0
0
0
0
0
0
0
Bit6
0
0
0
0
0
1
1
0
0
0
0
1
1
0
0
0
0
0
0
0
0
0
0
0
0
0
1
1
1
0
0
0
0
0
Bit5
0
0
0
0
0
1
0
0
0
1
1
0
0
0
0
0
0
0
0
0
1
0
0
0
0
1
0
0
1
1
0
1
1
0
Bit4
0
0
0
0
0
0
0
0
0
1
1
0
1
0
0
0
0
0
0
0
1
0
0
0
0
1
1
1
0
1
1
1
0
0
Bit3
0
1
1
1
1
0
0
0
0
0
1
0
0
0
0
1
0
0
1
0
1
0
0
0
0
1
0
0
0
1
1
1
1
0
Bit2
0
0
0
1
0
0
0
0
1
0
1
1
0
0
0
0
0
0
1
1
0
0
1
0
0
1
0
0
0
1
1
1
1
0
Bit1
0
0
0
1
1
0
0
0
0
0
0
0
0
0
1
0
0
0
0
0
0
0
0
0
1
0
0
0
0
0
1
0
0
0
Bit0
0
0
0
0
0
1
0
0
1
0
1
1
0
0
0
0
0
0
0
0
0
1
0
0
1
1
0
0
0
0
0
0
1
0
Hex
value
80H
08H
08H
0EH
0AH
61H
40H
00H
05H
30H
3DH
45H
50H
00H
82H
08H
00H
00H
0CH
04H
38H
01H
04H
00H
03H
3DH
50H
50H
60H
3CH
1EH
3CH
2DH
80H
Comments
128 bytes
256 bytes
DDR2 SDRAM
14
10
2
64
0
SSTL 1.8V
3.0ns*
1
Voltage interface level of this assembly 0
DDR SDRAM cycle time, CL = 5
-6E
-5C
SDRAM access from clock (tAC)
-6E
-5C
0
0
0
0
0
1
0
0
0
0
0
0
0
0
0
0
0
3.75ns*
0.45ns*
0.5ns*
None.
7.8µs
×
8
None.
0
4,8
4
3, 4, 5
1
1
10
1
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
DIMM configuration type
Refresh rate/type
Primary SDRAM width
Error checking SDRAM width
Reserved
SDRAM device attributes:
Burst length supported
SDRAM device attributes: Number of
banks on SDRAM device
SDRAM device attributes:
/CAS latency
DIMM Mechanical Characteristics
DIMM type information
SDRAM module attributes
SDRAM device attributes: General
Minimum clock cycle time at CL = 4
3.80mm max.
SO-DIMM
Normal
Weak Driver
50Ω ODT Support
3.75ns*
0.5ns*
5.0ns*
0.6ns*
15ns
7.5ns
15ns
45ns
512M bytes
1
1
Maximum data access time (tAC) from
0
clock at CL = 4
Minimum clock cycle time at CL = 3
0
Maximum data access time (tAC) from
0
clock at CL = 3
Minimum row precharge time (tRP)
Minimum row active to row active
delay (tRRD)
Minimum /RAS to /CAS delay (tRCD)
Minimum active to precharge time
(tRAS)
Module rank density
0
0
0
0
1
1
1
Data Sheet E0827E10 (Ver. 1.0)
5
RF/Wirelessly
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