DATA SHEET
512MB Unbuffered DDR2 SDRAM DIMM
EBE51UD8AEFA
(64M words
×
64 bits, 1 Rank)
Description
The EBE51UD8AEFA is 64M words
×
64 bits, 1 rank
DDR2 SDRAM unbuffered module, mounting 8 pieces
of 512M bits DDR2 SDRAM sealed in FBGA (µBGA
)
package. Read and write operations are performed at
the cross points of the CK and the /CK. This high-
speed data transfer is realized by the 4 bits prefetch-
pipelined architecture. Data strobe (DQS and /DQS)
both for read and write are available for high speed and
reliable data bus design. By setting extended mode
register, the on-chip Delay Locked Loop (DLL) can be
set enable or disable. This module provides high
density mounting without utilizing surface mount
technology.
Decoupling capacitors are mounted
beside each FBGA (µBGA) on the module board.
Note: Do not push the components or drop the
modules in order to avoid mechanical defects,
which may result in electrical defects.
Features
•
240-pin socket type dual in line memory module
(DIMM)
PCB height: 30.0mm
Lead pitch: 1.0mm
Lead-free
•
Power supply: VDD, VDDQ
=
1.8V
±
0.1V
•
Data rate: 533Mbps/400Mbps (max.)
•
SSTL_18 compatible I/O
•
Double-data-rate architecture: two data transfers per
clock cycle
•
Bi-directional, differential data strobe (DQS and
/DQS) is transmitted/received with data, to be used in
capturing data at the receiver
•
DQS is edge aligned with data for READs: center-
aligned with data for WRITEs
•
Differential clock inputs (CK and /CK)
•
DLL aligns DQ and DQS transitions with CK
transitions
•
Commands entered on each positive CK edge: data
and data mask referenced to both edges of DQS
•
Four internal banks for concurrent operation
(components)
•
Data mask (DM) for write data
•
Burst lengths: 4, 8
•
/CAS Latency (CL): 3, 4, 5
•
Auto precharge operation for each burst access
•
Auto refresh and self refresh modes
•
Average refresh period
7.8µs at 0°C
≤
TC
≤ +85°C
3.9µs at
+85°C <
TC
≤ +95°C
•
Posted CAS by programmable additive latency for
better command and data bus efficiency
•
Off-Chip-Driver Impedance Adjustment and On-Die-
Termination for better signal quality
•
/DQS can be disabled for single-ended Data Strobe
operation
Document No. E0584E30 (Ver. 3.0)
Date Published April 2005 (K) Japan
Printed in Japan
URL: http://www.elpida.com
Elpida
Memory, Inc. 2004-2005
EBE51UD8AEFA
Pin Description
Pin name
A0 to A13
A10 (AP)
BA0, BA1
DQ0 to DQ63
/RAS
/CAS
/WE
/CS0
CKE0
CK0 to CK2
/CK0 to /CK2
DQS0 to DQS7, /DQS0 to /DQS7
DM0 to DM7
SCL
SDA
SA0 to SA2
VDD
VDDSPD
VREF
VSS
ODT0
NC
Function
Address input
Row address
Column address
Auto precharge
Bank select address
Data input/output
Row address strobe command
Column address strobe command
Write enable
Chip select
Clock enable
Clock input
Differential clock input
Input and output data strobe
Input mask
Clock input for serial PD
Data input/output for serial PD
Serial address input
Power for internal circuit
Power for serial EEPROM
Input reference voltage
Ground
ODT control
No connection
A0 to A13
A0 to A9
Data Sheet E0584E30 (Ver. 3.0)
4
EBE51UD8AEFA
Serial PD Matrix
Byte No.
0
1
2
3
4
5
6
7
8
9
Function described
Number of bytes utilized by module
manufacturer
Total number of bytes in serial PD
device
Memory type
Number of row address
Number of column address
Number of DIMM ranks
Module data width
Module data width continuation
DDR SDRAM cycle time, CL = 5
-5C
-4A
10
SDRAM access from clock (tAC)
-5C
-4A
11
12
13
14
15
16
17
18
19
20
21
22
23
DIMM configuration type
Refresh rate/type
Primary SDRAM width
Error checking SDRAM width
Reserved
SDRAM device attributes:
Burst length supported
SDRAM device attributes: Number of
banks on SDRAM device
SDRAM device attributes:
/CAS latency
Reserved
DIMM type information
SDRAM module attributes
SDRAM device attributes: General
Minimum clock cycle time at CL = 4
-5C
-4A
24
Bit7
1
0
0
0
0
0
0
0
Bit6
0
0
0
0
0
1
1
0
0
0
1
1
1
0
0
0
0
0
0
0
0
0
0
0
0
0
1
1
1
1
1
Bit5
0
0
0
0
0
1
0
0
0
1
0
0
1
0
0
0
0
0
0
0
1
0
0
0
0
1
0
0
1
0
1
Bit4
0
0
0
0
0
0
0
0
0
1
1
1
0
0
0
0
0
0
0
0
1
0
0
0
0
1
1
1
0
1
0
Bit3
0
1
1
1
1
0
0
0
0
1
0
0
0
0
0
1
0
0
1
0
1
0
0
0
0
1
0
0
0
0
0
Bit2
0
0
0
1
0
0
0
0
1
1
0
0
0
0
0
0
0
0
1
1
0
0
0
0
0
1
0
0
0
0
0
Bit1
0
0
0
1
1
0
0
0
0
0
0
0
0
0
1
0
0
0
0
0
0
0
1
0
0
0
0
0
0
0
0
Bit0
0
0
0
0
0
0
0
0
1
1
0
0
0
0
0
0
0
0
0
0
0
0
0
0
1
1
0
0
0
0
0
Hex value
80H
08H
08H
0EH
0AH
60H
40H
00H
05H
3DH
50H
50H
60H
00H
82H
08H
00H
00H
0CH
04H
38H
00H
02H
00H
01H
3DH
50H
50H
60H
50H
60H
Comments
128 bytes
256 bytes
DDR2 SDRAM
14
10
1
64
0
SSTL 1.8V
3.75ns*
5.0ns*
0.5ns*
0.6ns*
None.
7.8µs
×
8
None.
0
4,8
4
3, 4, 5
0
Unbuffered
Normal
Weak Driver
3.75ns*
5.0ns*
0.5ns*
0.6ns*
5.0ns*
0.6ns*
1
1
1
1
Voltage interface level of this assembly 0
0
0
0
0
0
1
0
0
0
0
0
0
0
0
0
0
0
0
1
1
Maximum data access time (tAC) from
clock at CL = 4
0
-5C
-4A
0
Minimum clock cycle time at CL = 3
0
-5C, -4A
Maximum data access time (tAC) from
clock at CL = 3
0
-5C, -4A
1
1
25
26
1
1
Data Sheet E0584E30 (Ver. 3.0)
5
京公网安备 11010802033920号
EEWORLD
