DATA SHEET
512MB DDR2 SDRAM SO-DIMM
EBE52UD6ABSA
(64M words
×
64 bits, 2 Ranks)
Description
The EBE52UD6ABSA is 64M words
×
64 bits, 2 ranks
DDR2 SDRAM Small Outline Dual In-line Memory
Module, mounting 8 pieces of 512M bits DDR2
SDRAM sealed in FBGA (µBGA
) package. Read and
write operations are performed at the cross points of
the CK and the /CK. This high-speed data transfer is
realized by the 4 bits prefetch-pipelined architecture.
Data strobe (DQS and /DQS) both for read and write
are available for high speed and reliable data bus
design. By setting extended mode register, the on-chip
Delay Locked Loop (DLL) can be set enable or disable.
This module provides high density mounting without
utilizing surface mount technology.
Decoupling
capacitors are mounted beside each FBGA (µBGA) on
the module board.
Note: Do not push the components or drop the
modules in order to avoid mechanical defects,
which may result in electrical defects.
Features
•
200-pin socket type small outline dual in line memory
module (SO-DIMM)
PCB height: 30.0mm
Lead pitch: 0.6mm
Lead-free
•
1.8V power supply
•
Data rate: 533Mbps/400Mbps (max.)
•
1.8V (SSTL_18 compatible) I/O
•
Double-data-rate architecture: two data transfers per
clock cycle
•
Bi-directional, differential data strobe (DQS and
/DQS) is transmitted/received with data, to be used in
capturing data at the receiver
•
DQS is edge aligned with data for READs: center-
aligned with data for WRITEs
•
Differential clock inputs (CK and /CK)
•
DLL aligns DQ and DQS transitions with CK
transitions
•
Commands entered on each positive CK edge: data
and data mask referenced to both edges of DQS
•
Four internal banks for concurrent operation
(Component)
•
Data mask (DM) for write data
•
Burst lengths: 4, 8
•
/CAS Latency (CL): 3, 4, 5
•
Auto precharge operation for each burst access
•
Auto refresh and self refresh modes
•
7.8µs average periodic refresh interval
•
Posted CAS by programmable additive latency for
better command and data bus efficiency
•
Off-Chip-Driver Impedance Adjustment and On-Die-
Termination for better signal quality
•
/DQS can be disabled for single-ended Data Strobe
operation.
Document No. E0418E30 (Ver. 3.0)
Date Published June 2004 (K) Japan
URL: http://www.elpida.com
Elpida
Memory, Inc. 2003-2004
EBE52UD6ABSA
Pin Description
Pin name
A0 to A12
A10 (AP)
BA0, BA1
DQ0 to DQ63
/RAS
/CAS
/WE
/CS0, /CS1
CKE0, CKE1
CK0, CK1
/CK0, /CK1
DQS0 to DQS7, /DQS0 to /DQS7
DM0 to DM7
SCL
SDA
SA0, SA1
VDD
VDDSPD
VREF
VSS
ODT0, ODT1
NC
Function
Address input
Row address
Column address
Auto precharge
Bank select address
Data input/output
Row address strobe command
Column address strobe command
Write enable
Chip select
Clock enable
Clock input
Differential clock input
Input and output data strobe
Input mask
Clock input for serial PD
Data input/output for serial PD
Serial address input
Power for internal circuit
Power for serial EEPROM
Input reference voltage
Ground
ODT control
No connection
A0 to A12
A0 to A9
Data Sheet E0418E30 (Ver. 3.0)
4
EBE52UD6ABSA
Serial PD Matrix
Byte No.
0
1
2
3
4
5
6
7
8
9
Function described
Number of bytes utilized by module
manufacturer
Total number of bytes in serial PD
device
Memory type
Number of row address
Number of column address
Number of DIMM ranks
Module data width
Module data width continuation
DDR SDRAM cycle time, CL = 5
-5C
-4A
10
SDRAM access from clock (tAC)
-5C
-4A
11
12
13
14
15
16
17
18
19
20
21
22
23
DIMM configuration type
Refresh rate/type
Primary SDRAM width
Error checking SDRAM width
Reserved
SDRAM device attributes:
Burst length supported
SDRAM device attributes: Number of
banks on SDRAM device
SDRAM device attributes:
/CAS latency
Reserved
DIMM type information
SDRAM module attributes
SDRAM device attributes: General
Minimum clock cycle time at CL = 4
-5C
-4A
24
Bit7
1
0
0
0
0
0
0
0
Bit6
0
0
0
0
0
1
1
0
0
0
1
1
1
0
0
0
0
0
0
0
0
0
0
0
0
0
1
1
1
1
1
0
0
0
0
Bit5 Bit4
0
0
0
0
0
1
0
0
0
1
0
0
1
0
0
0
0
0
0
0
1
0
0
0
1
1
0
0
1
0
1
1
1
1
1
0
0
0
0
0
0
0
0
0
1
1
1
0
0
0
1
0
0
0
0
1
0
0
0
1
1
1
1
0
1
0
1
0
1
0
Bit3
0
1
1
1
1
0
0
0
0
1
0
0
0
0
0
0
0
0
1
0
1
0
0
0
0
1
0
0
0
0
0
1
1
1
1
Bit2
0
0
0
1
0
0
0
0
1
1
0
0
0
0
0
0
0
0
1
1
0
0
1
0
0
1
0
0
0
0
0
1
0
1
1
Bit1 Bit0
0
0
0
0
1
0
0
0
0
0
0
0
0
0
1
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
1
0
1
0
0
1
1
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
1
0
0
0
0
0
0
0
0
1
Hex value
80H
08H
08H
0DH
0AH
61H
40H
00H
05H
3DH
50H
50H
60H
00H
82H
10H
00H
00H
0CH
04H
38H
00H
04H
00H
30H
3DH
50H
50H
60H
50H
60H
3CH
28H
3CH
2DH
Comments
128 bytes
256 bytes
DDR2 SDRAM
13
10
2
64
0
SSTL 1.8V
3.75ns*
1
5.0ns*
1
0.5ns*
1
0.6ns*
1
None.
7.8µs
×
16
None.
0
4,8
4
3, 4, 5
0
SO-DIMM
Normal
VDD ± 0.1V
3.75ns*
1
5.0ns*
1
0.5ns*
1
0.6ns*
1
5.0ns*
1
0.6ns*
1
15ns
10ns
15ns
45ns
Voltage interface level of this assembly 0
0
0
0
0
0
1
0
0
0
0
0
0
0
0
0
0
0
0
Maximum data access time (tAC) from
clock at CL = 4
0
-5C
-4A
0
0
Minimum clock cycle time at CL = 3
25
26
27
28
29
30
Maximum data access time (tAC) from
0
clock at CL = 3
Minimum row precharge time (tRP)
Minimum row active to row active
delay (tRRD)
Minimum /RAS to /CAS delay (tRCD)
Minimum active to precharge time
(tRAS)
0
0
0
0
Data Sheet E0418E30 (Ver. 3.0)
5
stm32/stm8
京公网安备 11010802033920号
EEWORLD
