BAT54/A/C/S
BAT54/A/C/S
Connection DiagramS
3
3
BAT54
3
3 BAT54A
L4P
2
1
1
2
1
BAT54C 3
2NC
1
2
3 BAT54S
MARKING
BAT54 = L4P BAT54A = L42
BAT54C = L43 BAT54S = L44
SOT-23
1
2
1
2
Schottky Diodes
Absolute Maximum Ratings*
Symbol
V
RRM
I
F(AV)
I
FSM
T
stg
T
J
T
A
= 25°C unless otherwise noted
Parameter
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current
Non-repetitive Peak Forward Surge Current
Pulse width = 1.0 second
Storage Temperature Range
Operating Junction Temperature
Value
30
200
600
-55 to +150
150
Units
V
mA
mA
°C
°C
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics
Symbol
P
D
R
θJA
Power Dissipation
Thermal Resistance, Junction to Ambient
T
A
= 25°C unless otherwise noted
Parameter
Value
290
430
Units
mW
°C/W
Electrical Characteristics
Symbol
V
R
V
F
Parameter
Breakdown Voltage
Forward Voltage
Test Conditions
I
R
= 10
µA
I
F
= 0.1 mA
I
F
= 1 mA
I
F
= 10 mA
I
F
= 30 mA
I
F
= 100 mA
V
R
=25 V
V
R
= 1V, f = 1.0 MHz
I
F
= I
R
= 10 mA, I
RR
= 1.0 mA,
R
L
= 100Ω
Min
30
Max
240
320
400
500
1.0
2
10
5.0
Units
V
mV
mV
mV
mV
V
µA
pf
ns
I
R
C
T
t
rr
Reverse Current
Total Capacitance
Reverse Recovery Time
2001
Fairchild Semiconductor Corporation
BAT54, Rev. C
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or
In Design
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
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Rev. H4
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