DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP32N055HLE, NP32N055ILE
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
These products are N-channel MOS Field Effect
Transistor designed for high current switching
applications.
ORDERING INFORMATION
PART NUMBER
NP32N055HLE
NP32N055ILE
PACKAGE
TO-251
TO-252
FEATURES
•
Channel temperature 175 degree rated
•
Super low on-state resistance
R
DS(on)1
= 24 mΩ MAX. (V
GS
= 10 V, I
D
= 16 A)
R
DS(on)2
= 29 mΩ MAX. (V
GS
= 5.0 V, I
D
= 16 A)
•
Low C
iss
: C
iss
= 1300 pF TYP.
•
Built-in gate protection diode
(TO-251)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Note1
Total Power Dissipation (T
A
= 25°C)
Total Power Dissipation (T
C
= 25°C)
Single Avalanche Current
Note2
Single Avalanche Energy
Channel Temperature
Storage Temperature
Note2
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T
P
T
I
AS
E
AS
T
ch
T
stg
55
±20
±32
±100
1.2
66
28 / 21 / 8
7.8 / 44 / 64
175
–55 to +175
V
V
A
A
W
W
A
mJ
°C
°C
(TO-252)
Notes 1.
PW
≤
10
µ
s, Duty cycle
≤
1 %
2.
Starting T
ch
= 25°C, R
G
= 25
Ω
, V
GS
= 20 V→0 V (See Figure 4.)
THERMAL RESISTANCE
Channel to Case
Channel to Ambient
R
th(ch-C)
R
th(ch-A)
2.27
125
°C/W
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
D14137EJ3V0DS00 (3rd edition)
Date Published March 2001 NS CP(K)
Printed in Japan
The mark
5
shows major revised points.
©
1999
NP32N055HLE, NP32N055ILE
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C)
CHARACTERISTICS
Drain to Source On-state Resistance
SYMBOL
R
DS(on)1
R
DS(on)2
R
DS(on)3
Gate to Source Threshold Voltage
Forward Transfer Admittance
Drain Leakage Current
Gate to Source Leakage Current
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
V
GS(th)
| y
fs
|
I
DSS
I
GSS
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
G1
Q
G2
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Q
GS
Q
GD
V
F(S-D)
t
rr
Q
rr
I
F
= 32 A, V
GS
= 0 V
I
F
= 32 A, V
GS
= 0 V, di/dt = 100 A/
µ
s
I
D
= 32 A, V
DD
= 44 V, V
GS
= 10 V
I
D
= 32 A, V
DD
= 44 V, V
GS
= 5.0 V
I
D
= 16 A, V
GS(on)
= 10 V, V
DD
= 28 V,
R
G
= 1
Ω
TEST CONDITIONS
V
GS
= 10 V, I
D
= 16 A
V
GS
= 5.0 V, I
D
= 16 A
V
GS
= 4.5 V, I
D
= 16 A
V
DS
= V
GS
, I
D
= 250
µ
A
V
DS
= 10 V, I
D
= 16 A
V
DS
= 55 V, V
GS
= 0 V
V
GS
= ±20 V, V
DS
= 0 V
V
DS
= 25 V, V
GS
= 0 V, f = 1 MHz
1300
180
90
14
8
40
7.4
27
15
5
9
1.0
41
58
1.5
8
MIN.
TYP.
19
22
24
2
16
10
±10
2000
270
160
31
20
81
19
41
23
MAX.
24
29
33
2.5
UNIT
mΩ
mΩ
mΩ
V
S
µ
A
µ
A
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
nC
V
ns
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
R
G
= 25
Ω
PG.
V
GS
= 20
→
0 V
50
Ω
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L
V
DD
PG.
R
G
V
GS
R
L
V
DD
V
DS
90 %
90 %
10 % 10 %
V
GS
Wave Form
0
10 %
V
GS(on)
90 %
BV
DSS
I
AS
I
D
V
DD
V
DS
V
GS
0
τ
τ
= 1
µs
Duty Cycle
≤
1 %
V
DS
V
DS
Wave Form
0
t
d(on)
t
on
t
r
t
d(off)
t
off
t
f
Starting T
ch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
I
G
= 2 mA
PG.
50
Ω
R
L
V
DD
2
Data Sheet D14137EJ3V0DS
NP32N055HLE, NP32N055ILE
TYPICAL CHARACTERISTICS (T
A
= 25 °C)
Figure1. DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
70
Figure2. TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
dT - Percentage of Rated Power - %
P
T
- Total Power Dissipation - W
100
80
60
40
20
0
60
50
40
30
20
10
0
0
25
50
75
100 125 150 175 200
0
25
50
75
100 125 150 175 200
T
C
- Case Temperature - ˚C
T
C
- Case Temperature - ˚C
5
Figure3. FORWARD BIAS SAFE OPERATING AREA
1000
Single Pulse Avalanche Energy - mJ
70
Figure4. SINGLE AVALANCHE ENERGY
DERATING FACTOR
64 mJ
I
D
- Drain Current - A
100
d
ite V)
Lim10
)
on
=
S(
S
R
D
t V
G
(a
I
D(pulse)
I
D(DC)
1m
PW
60
50
44 mJ
10
s
=1
0
µ
0
µ
s
10
DC
P
Limowe
ite r D
d iss
ipa
s
40
30
20
10
7.8 mJ
0
25
50
75
tio
n
I
AS
= 8 A
21 A
28 A
1
T
C
= 25˚C
Single Pulse
1
10
100
0.1
0.1
100
125
150
175
V
DS -
Drain to Source Voltage - V
Starting T
ch
- Starting Channel Temperature - ˚C
Figure5. TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
r
th(t)
- Transient Thermal Resistance - ˚C/W
100
R
th(ch-A)
= 125 ˚C/W
10
R
th(ch-C)
= 2.27 ˚C/W
1
0.1
Single Pulse
T
C
= 25˚C
100
µ
1m
10 m
100 m
1
10
100
1000
0.01
10
µ
PW - Pulse Width - s
Data Sheet D14137EJ3V0DS
3
NP32N055HLE, NP32N055ILE
Figure6. FORWARD TRANSFER CHARACTERISTICS
100
Pulsed
120
100
Figure7. DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
Pulsed
V
GS
=10 V
I
D
- Drain Current - A
10
1
T
A
=
−55˚C
25˚C
75˚C
150˚C
175˚C
I
D
- Drain Current - A
80
60
40
20
4.5 V
5.0 V
0.1
0.01
1.0
2.0
3.0
4.0
V
DS
= 10 V
5.0
6.0
0
0
1
2
3
4
5
6
7
8
V
GS
- Gate to Source Voltage - V
V
DS
- Drain to Source Voltage - V
100
Pulsed
V
DS
= 10 V
R
DS(on)
- Drain to Source On-state Resistance - mΩ
Figure8. FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
| y
fs
| - Forward Transfer Admittance - S
Figure9. DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
40
Pulsed
10
30
1
T
A
= 175˚C
75˚C
25˚C
−55˚C
20
I
D
= 16 A
0.1
10
0.01
0.01
0.1
1
10
100
0
0
2
4
6
8
10 12
14
16 18
20
I
D
- Drain Current - A
V
GS
- Gate to Source Voltage - V
R
DS(on)
- Drain to Source On-state Resistance - mΩ
80
70
60
50
40
30
20
10
0
0.1
1
10
V
GS
= 10 V
5.0 V
4.5 V
Pulsed
V
GS(th)
- Gate to Source Threshold Voltage - V
Figure10. DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
Figure11. GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
3.0
V
DS
= V
GS
I
D
= 250
µ
A
2.0
1.0
100
0
−50
0
50
100
150
I
D
- Drain Current - A
T
ch
- Channel Temperature - ˚C
4
Data Sheet D14137EJ3V0DS
NP32N055HLE, NP32N055ILE
R
DS(on)
- Drain to Source On-state Resistance - mΩ
Figure12. DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
60
50
40
30
20
10
0
I
D
= 16 A
−50
0
50
100
150
T
ch
- Channel Temperature - ˚C
V
GS
= 4.5 V
5.0 V
10 V
Figure13. SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
1000
Pulsed
I
SD
- Diode Forward Current - A
100
V
GS
= 10 V
10
V
GS
= 0 V
1
0.1
0
0.5
1.0
1.5
V
SD
- Source to Drain Voltage - V
C
iss
, C
oss
, C
rss
- Capacitance - pF
C
iss
1000
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
Figure14. CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
10000
V
GS
= 0 V
f = 1 MHz
Figure15. SWITCHING CHARACTERISTICS
1000
100
t
f
t
d(off)
t
d(on)
C
oss
100
C
rss
10
t
r
10
0.1
1
10
100
1
0.1
1
10
100
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
Figure16. REVERSE RECOVERY TIME vs.
DRAIN CURRENT
1000
Figure17. DYNAMIC INPUT/OUTPUT CHARACTERISTICS
80
16
14
60
V
DD
= 44 V
28 V
11 V
V
GS
12
10
8
6
20
V
DS
0
I
D
= 32 A
0
4
8
12
16
20
24
28
32
4
2
V
DS
- Drain to Source Voltage - V
t
rr
- Reverse Recovery Time - ns
100
40
10
1
0.1
1.0
10
100
I
F
- Drain Current - A
Q
G
- Gate Charge - nC
V
GS
- Gate to Source Voltage - V
di/dt = 100 A/µs
V
GS
= 0 V
Data Sheet D14137EJ3V0DS
5
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