Bulletin I2402 rev. C 05/06
25RIA SERIES
MEDIUM POWER THYRISTORS
Stud Version
Features
Improved glass passivation for high reliability
and exceptional stability at high temperature
High di/dt and dv/dt capabilities
Standard package
Low thermal resistance
Metric threads version available
Types up to 1600V V
DRM
/ V
RRM
RoHS Compliant
25A
Typical Applications
Medium power switching
Phase control applications
Can be supplied to meet stringent military,
aerospace and other high-reliability requirements
Major Ratings and Characteristics
Parameters
I
T(AV)
@ T
C
I
T(RMS)
I
TSM
I
2
t
@ 50Hz
@ 60Hz
@ 50Hz
@ 60Hz
V
DRM
/V
RRM
t
q
T
J
typical
25RIA
10 to 120
140 to 160
25
85
40
420
440
867
790
100 to 1200
110
- 65 to 125
25
85
40
398
415
795
725
1400 to 1600
Units
A
°C
A
A
A
A
2
s
A
2
s
V
μs
°C
Case Style
TO-208AA (TO-48)
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1
25RIA Series
Bulletin I2402 rev. C 05/06
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Type number
Voltage
Code
10
20
40
60
25RIA
80
100
120
140
160
V
DRM
/V
RRM
, max. repetitive
peak and off-state voltage (1)
V
100
200
400
600
800
1000
1200
1400
1600
V
RSM
, maximum non-
repetitive peak voltage (2)
V
150
300
500
700
900
1100
1300
1500
1700
I
DRM
/I
RRM
max.
@ T
J
= T
J
max.
mA
20
10
(1)
Units may be broken over non-repetitively in the off-state direction without damage, if dI/dt does not exceed 20A/μs
(2)
For voltage pulses with t
p
≤
5ms
On-state Conduction
Parameter
I
T(AV)
I
T(RMS)
I
TSM
Max. average on-state current
@ Case temperature
Max. RMS on-state current
Max. peak, one-cycle
non-repetitive surge current
25RIA
10 to 120
25
85
40
420
440
350
370
140 to 160
25
85
40
398
415
335
350
795
725
560
510
7950
0.99
1.15
11.73
10.05
---
1.80
Units
A
°C
A
A
Conditions
180° sinusoidal conduction
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
No voltage
reapplied
100% V
RRM
reapplied
No voltage
reapplied
100% V
RRM
reapplied
Sinusoidal half wave,
Initial T
J
= T
J
max.
I
2
t
Maximum I
2
t for fusing
867
790
615
560
A
2
s
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
I
2
√t
V
T(TO)1
Maximum I
2
√t
for fusing
Low level value of threshold
voltage
8670
0.99
1.40
10.1
5.7
1.70
---
A
2
√s
V
t = 0.1 to 10ms, no voltage reapplied, T
J
= T
J
max.
(16.7% x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
= T
J
max.
(I >
π
x I
T(AV)
),T
J
= T
J
max.
V
T(TO)
2
High level value of threshold
voltage
r
t1
r
t2
V
TM
Low level value of on-state
slope resistance
High level value of on-state
slope resistance
Max. on-state voltage
mΩ
(16.7% x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
= T
J
max.
(I >
π
x I
T(AV)
),T
J
= T
J
max.
V
I
pk
= 79 A, T
J
= 25°C
T
J
= 25°C. Anode supply 6V, resistive load,
I
H
I
L
Maximum holding current
Latching current
130
200
mA
2
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25RIA Series
Bulletin I2402 rev. C 05/06
Switching
Parameter
di/dt
Max. rate of rise of turned-on
current
V
DRM
≤
800V
V
DRM
≤
600V
180
V
DRM
≤
1000V
V
DRM
≤
1600V
t
gt
t
rr
t
q
Typical turn-on time
Typical reverse recovery time
160
150
0.9
4
μs
T
J
= 25°C,
at = rated V
DRM
/V
RRM
, T
J
= 125°C
T
J
= T
J
max.,
I
TM
= I
T(AV)
, t
p
> 200μs, di/dt = -10A/μs
Typical turn-off time
110
T
J
= T
J
max., I
TM
= I
T(AV)
, t
p
> 200μs, V
R
= 100V,
di/dt = -10A/μs, dv/dt = 20V/μs linear to
67% V
DRM
, gate bias 0V-100W
(*) t
q
= 10μsup to 600V, t
q
= 30μs up to 1600V available on special request.
200
A/μs
25RIA
Units
Conditions
T
J
= T
J
max., V
DM
= rated V
DRM
Gate pulse = 20V, 15Ω, t
p
= 6μs, t
r
= 0.1μs max.
I
TM
= (2x rated di/dt) A
Blocking
Parameter
dv/dt
Max. critical rate of rise of
off-state voltage
25RIA
100
300 (*)
Units
V/μs
Conditions
T
J
= T
J
max. linear to 100% rated V
DRM
T
J
= T
J
max. linear to 67% rated V
DRM
(**) Available with: dv/dt = 1000V/μs, to complete code add S90 i.e. 25RIA160S90.
Triggering
Parameter
P
GM
I
GM
-V
GM
I
GT
Maximum peak gate power
P
G(AV)
Maximum average gate power
Max. peak positive gate current
Maximum peak negative
gate voltage
DC gate current required
to trigger
90
60
35
V
GT
DC gate voltage required
to trigger
I
GD
V
GD
DC gate current not to trigger
DC gate voltage not to trigger
3.0
2.0
1.0
2.0
0.2
V
V
mA
V
mA
T
J
= - 65°C
T
J
= 25°C
T
J
= 125°C
T
J
= - 65°C
T
J
= 25°C
T
J
= 125°C
T
J
= T
J
max., V
DRM
= rated value
T
J
= T
J
max.
V
DRM
= rated value
Max. gate current/ voltage not to
trigger is the max. value which
will not trigger any unit with rated
V
DRM
anode-to-cathode applied
Max. required gate trigger current/
voltage are the lowest value which
will trigger all units 6V anode-to-
cathode applied
25RIA
8.0
2.0
1.5
10
Units
W
A
V
Conditions
T
J
= T
J
max.
T
J
= T
J
max.
T
J
= T
J
max.
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25RIA Series
Bulletin I2402 rev. C 05/06
Thermal and Mechanical Specification
Parameter
T
J
T
stg
R
thJC
Max. operating temperature range
Max. storage temperature range
Max. thermal resistance,
junction to case
R
thCS
Max. thermal resistance,
case to heatsink
T
Allowable mounting torque
3.4
+0-10%
30
23
+0-10%
20
wt
Approximate weight
Case style
14 (0.49)
Nm
lbf-in
Nm
lbf-in
g (oz)
See Outline Table
Lubricated threads
Non-lubricated threads
0.35
K/W
Mounting surface, smooth, flat and greased
25RIA
- 65 to 125
- 65 to 125
0.75
Units
°C
°C
K/W
Conditions
DC operation
TO-208AA (TO-48)
ΔR
thJC
Conduction
(The following table shows the increment of thermal resistence R
thJC
when devices operate at different conduction angles than DC)
Conduction angle
180°
120°
90°
60°
30°
Sinusoidal conduction
0.17
0.21
0.27
0.40
0.69
Rectangular conduction Units
0.13
0.22
0.30
0.42
0.70
K/W
Conditions
T
J
= T
J
max.
Ordering Information Table
Device Code
25
1
RIA 160
2
3
M
4
S90
5
1
2
3
4
-
-
-
-
Current code
Essential part number
Voltage code: Code x 10 = V
RRM
(See Voltage Rating Table)
None = Stud base TO-208AA (TO-48) 1/4" 28UNF-2A
M
= Stud base TO-208AA (TO-48) M6 X 1
5
-
Critical dv/dt: None = 300V/μs (Standard value)
S90
= 1000V/μs (Special selection)
4
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25RIA Series
Bulletin I2402 rev. C 05/06
Outline Table
Case Style TO-208AA (TO-48)
All dimensions in millimeters (inches)
Maximum Allowable Case Temperature (°C)
Maximum Allowable Case Temperature (°C)
130
25RIA Series (100 to 1200V)
R
thJC
(DC) = 0.75 K/W
130
25RIA Series (100 to 1200V)
R
thJC
(DC) = 0.75 K/W
120
120
110
Conduction Angle
110
Conduction Period
100
30°
60°
100
30°
90°
60°
90°
120°
180°
DC
120°
180°
90
90
80
0
5
10
15
20
25
30
80
0
10
20
30
40
Average On-state Current (A)
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristic
Fig. 2 - Current Ratings Characteristic
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Embedded System
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