DATA SHEET
E.S.D NOISE CLIPPING DIODES
NNCD3.3B to NNCD12B
ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES
(500 mW TYPE)
This product series is a diode developed for E.S.D (Electrostatic
Discharge) noise protection. Based on the IEC1000-4-2 test on
electromagnetic interference (EMI), the diode assures an endur-
ance of no less than 30 kV.
Type NNCD2.0B to NNCD12B Series is into DO-35 Package with
DHD (Double Heatsink Diode) construction having allowable
power dissipation of 500 mW.
φ
0.5
25 MIN.
Cathode
indication
PACKAGE DIMENSIONS
(in millimeters)
FEATURES
• Based on the electrostatic discharge immunity test (IEC1000-4-
2), the product assures the minimum endurance of 30 kV.
• Based on the reference supply of the set, the product achieves
a series over a wide range (15 product name lined up).
• DHD (Double Heatsink Diode) construction.
φ
2.0 MAX.
APPLICATIONS
• Circuit E.S.D protection.
• Circuits for Waveform clipper, Surge absorber.
MAXIMUM RATINGS (T
A
= 25
°
C)
Power Dissipation
Surge Reverse Power
Junction Temperature
Storage Temperature
P
P
RSM
T
j
T
stg
500 mW
100 W (t
T
= 10
µ
s 1 pulse)
175
°C
–65
°C
to +175
°C
Fig. 7
Document No. D11770EJ2V0DS00 (2nd edition)
Date Published December 1996 N
Printed in Japan
25 MIN.
4.2 MAX.
©
1996
NNCD3.3B to NNCD12B
ELECTRICAL CHARACTERISTICS (T
A
= 25 ˚C)
Dynamic
Impedance
Note 2
Zz (Ω)
MAX.
70
60
50
40
25
20
13
10
8
8
8
8
8
10
10
I
T
(mA)
20
20
20
20
20
20
20
20
20
20
20
20
20
10
10
Breakdown Voltage
Note 1
V
BR
(V)
Type Number
MIN.
NNCD3.3B
NNCD3.6B
NNCD3.9B
NNCD4.3B
NNCD4.7B
NNCD5.1B
NNCD5.6B
NNCD6.2B
NNCD6.8B
NNCD7.5B
NNCD8.2B
NNCD9.1B
NNCD10B
NNCD11B
NNCD12B
3.16
3.47
3.77
4.05
4.47
4.85
5.29
5.81
6.32
6.88
7.56
8.33
9.19
10.18
11.13
MAX.
3.53
3.83
4.14
4.53
4.91
5.35
5.88
6.40
6.97
7.64
8.41
9.29
10.3
11.26
12.30
I
T
(mA)
20
20
20
20
20
20
20
20
20
20
20
20
20
10
10
Reverse Leakage
I
R
(
µ
A)
Capacitance
C
t
(pF)
TEST
CONDITION
E.S.D Voltage
(kV)
TEST
CONDITION
MAX.
20
10
5
5
5
5
5
5
2
0.5
0.5
0.5
0.2
0.2
0.2
V
R
(V)
1.0
1.0
1.0
1.0
1.0
1.5
2.5
3.0
3.5
4.0
5.0
6.0
7.0
8.0
9.0
TYP.
240
230
220
210
190
160
140
120
110
90
90
90
80
70
70
MIN.
30
30
30
30
30
30
C = 150 pF
R = 330
Ω
(IEC1000
-4-2)
V
R
= 0 V
f = 1 MHz
30
30
30
30
30
30
30
30
30
Notes 1.
Tested with pulse (40 ms)
2.
Zz is measured at I
T
give a small A.C. signal.
2
NNCD3.3B to NNCD12B
TYPICAL CHARACTERISTICS (T
A
= 25
°
C)
Fig. 1 POWER DISSIPATION vs.
AMBIENT TEMPERATURE
600
R
th
- Thermal Resistance - °C/W
Fig. 2 THERMAL RESISTANCE vs.
SIZE OF P.C BOARD
600
500
400
300
= 10 mm
200
100
0
= 5 mm
S
Junction to
anbient
P - Power Dissipation - mW
500
400
300
200
100
0
10 mm
P.C Board
φ
3 mm
t = 0.035 mm
= 5 mm
= 10 mm
P.C Board
7 mm
t = 0.035 mm
0
20
40
60
80 100 120 140 160 180 200
0
20
40
60
80
100
T
A
- Ambient Temperature - °C
S - Size of P.C Board - mm
2
Fig. 3 I
T
- V
BR
CHARACTERISTICS
NNCD5.6B
NNCD5.1B
100 m
NNCD3.3B
NNCD3.6B
10 m NNCD3.9B
NNCD4.3B
NNCD4.7B
1m
I
T
- On State Current - A
I
T
- On State Current - A
T
A
= 25 °C NNCD6.8B
TYP.
NNCD6.2B
NNCD7.5B
NNCD8.2B
NNCD9.1B
Fig. 4 I
T
- V
BR
CHARACTERISTICS
T
A
= 25 °C
TYP.
100 m
NNCD11B
NNCD12B
NNCD10B
10 m
1m
100
µ
100
µ
10
µ
10
µ
1
µ
1
µ
100 n
100 n
10 n
10 n
1n
0
1
2
3
4
5
6
7
8
9
V
BR
- Breakdown Voltage - V
1n
0
7
8
9
10 11 12 13 14 15
V
BR
- Breakdown Voltage - V
3
NNCD3.3B to NNCD12B
Fig. 5 Z
z
- I
T
CHARACTERISTICS
1 000
Z
Z
- Dynamic Impedance -
Ω
T
A
= 25 °C
TYP.
NNCD3.3B
100
NNCD3.9B
NNCD4.7B
10
NN
CD
NN
6B
5.
CD
NN
CD
5B
7.
10
B
1
0.01
0.1
1
10
100
I
T
- On State Current - mA
Fig. 6 TRANSIENT THERMAL IMPEDANCE
5 000
Z
th
- Transient Thermal Impedance - °C/W
1 000
300 °C/W
NNCD [ ] B
100
10
5
1m
10 m
100 m
1
t - Time - s
10
100
Fig. 7 SURGE REVERSE POWER RATING
1 000
T
A
= 25 °C
Non-repetitive
P
RSM
P
RSM
- Surge Reverse Power - W
t
T
100
NNCD [ ] B
10
1
1
µ
10
µ
100
µ
1m
10 m
100 m
t
T
- Pulse Width - s
4
NNCD3.3B to NNCD12B
REFERENCE
Document Name
NEC semiconductor device reliability/quality control system
NEC semiconductor device reliability/quality control system
Quality grade on NEC semiconductor device
Semiconductor device mounting technology manual
Guide to quality assurance for semiconductor device
Document No.
C11745E
MEI-1201
C11531E
C10535E
MEI-1202
5
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